公开(公告)号：US20150044854A1

公开(公告)日：2015-02-12

申请号：US14454432

申请日：2014-08-07

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jeong-Kil LEE ,  Chan-Ho PARK ,  Nam-Ki CHO ,  Won-Sang CHOI

IPC: H01L23/544 ,  H01L21/283 ,  H01L21/762

CPC classification number: H01L23/544 ,  H01L21/283 ,  H01L21/76224 ,  H01L2223/54426 ,  H01L2223/5446 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Provided is a method of fabricating a semiconductor device. The method of fabricating a semiconductor device includes preparing a substrate in which a scribe lane region and a chip region are defined, forming a trench in the scribe lane region of the substrate, forming a stopper layer in a part in the trench, and forming an alignment mark material on the stopper layer.

Abstract translation: 提供一种制造半导体器件的方法。 制造半导体器件的方法包括制备其中限定划线区域和芯片区域的衬底，在衬底的划线路区域中形成沟槽，在沟槽中的一部分形成阻挡层，并形成 停止层上的对准标记材料。

公开(公告)号：US20140042531A1

公开(公告)日：2014-02-13

申请号：US13963194

申请日：2013-08-09

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Chan-Ho PARK ,  Min-Kwon CHO ,  Takayuki GOMI ,  Nam-Ki CHO ,  Won-Sang CHOI

IPC: H01L29/78

CPC classification number: H01L29/7813 ,  H01L21/26586 ,  H01L29/0634 ,  H01L29/0869 ,  H01L29/1095 ,  H01L29/41766 ,  H01L29/66727 ,  H01L29/66734

Abstract: A semiconductor device includes a trench in a substrate, a gate filling a part of the trench, a tilted source on a side wall of the trench, the tilted source partially overlapping the gate, an interlayer insulating film on the substrate and filling the trench, and a contact hole penetrating parts of the interlayer insulating film and the substrate and contacting the tilted source, the contact hole having a tilted surface at an angle that is equal to or larger than 80 degrees and smaller than 90 degrees.

Abstract translation: 半导体器件包括衬底中的沟槽，填充沟槽的一部分的栅极，沟槽侧壁上的倾斜源，与栅极部分重叠的倾斜源，衬底上的层间绝缘膜并填充沟槽， 以及穿过所述层间绝缘膜和所述基板的部分的接触孔，并使所述倾斜源接触，所述接触孔具有等于或大于80度且小于90度的倾斜表面。