公开(公告)号：US20150044854A1

公开(公告)日：2015-02-12

申请号：US14454432

申请日：2014-08-07

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jeong-Kil LEE ,  Chan-Ho PARK ,  Nam-Ki CHO ,  Won-Sang CHOI

IPC: H01L23/544 ,  H01L21/283 ,  H01L21/762

CPC classification number: H01L23/544 ,  H01L21/283 ,  H01L21/76224 ,  H01L2223/54426 ,  H01L2223/5446 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Provided is a method of fabricating a semiconductor device. The method of fabricating a semiconductor device includes preparing a substrate in which a scribe lane region and a chip region are defined, forming a trench in the scribe lane region of the substrate, forming a stopper layer in a part in the trench, and forming an alignment mark material on the stopper layer.

Abstract translation: 提供一种制造半导体器件的方法。 制造半导体器件的方法包括制备其中限定划线区域和芯片区域的衬底，在衬底的划线路区域中形成沟槽，在沟槽中的一部分形成阻挡层，并形成 停止层上的对准标记材料。