公开(公告)号：US20140042531A1

公开(公告)日：2014-02-13

申请号：US13963194

申请日：2013-08-09

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Chan-Ho PARK ,  Min-Kwon CHO ,  Takayuki GOMI ,  Nam-Ki CHO ,  Won-Sang CHOI

IPC: H01L29/78

CPC classification number: H01L29/7813 ,  H01L21/26586 ,  H01L29/0634 ,  H01L29/0869 ,  H01L29/1095 ,  H01L29/41766 ,  H01L29/66727 ,  H01L29/66734

Abstract: A semiconductor device includes a trench in a substrate, a gate filling a part of the trench, a tilted source on a side wall of the trench, the tilted source partially overlapping the gate, an interlayer insulating film on the substrate and filling the trench, and a contact hole penetrating parts of the interlayer insulating film and the substrate and contacting the tilted source, the contact hole having a tilted surface at an angle that is equal to or larger than 80 degrees and smaller than 90 degrees.

Abstract translation: 半导体器件包括衬底中的沟槽，填充沟槽的一部分的栅极，沟槽侧壁上的倾斜源，与栅极部分重叠的倾斜源，衬底上的层间绝缘膜并填充沟槽， 以及穿过所述层间绝缘膜和所述基板的部分的接触孔，并使所述倾斜源接触，所述接触孔具有等于或大于80度且小于90度的倾斜表面。