SEMICONDUCTOR DEVICES
    2.
    发明申请

    公开(公告)号:US20220093755A1

    公开(公告)日:2022-03-24

    申请号:US17544158

    申请日:2021-12-07

    Abstract: A semiconductor device may include a substrate, an interface insulation pattern, a gate insulation pattern, a threshold voltage controlling metal pattern and a conductive pattern. The interface insulation pattern may be formed on the substrate. The gate insulation pattern including an oxide having a dielectric constant higher than that of silicon oxide may be formed on the interface insulation pattern. The threshold voltage controlling metal pattern may be formed on the gate insulation pattern. The conductive pattern may be formed on the threshold voltage controlling metal pattern. First dopants including at least fluorine may be included within and at at least one surface of the gate insulation pattern and at an upper surface of an interface insulation pattern contacting the gate insulation pattern. The semiconductor device may have excellent electrical characteristics.

    TOUCH SENSOR AND TOUCH SENSING METHOD
    4.
    发明公开

    公开(公告)号:US20240045556A1

    公开(公告)日:2024-02-08

    申请号:US18485708

    申请日:2023-10-12

    CPC classification number: G06F3/0446 G06F3/0412

    Abstract: A touch sensor of multi-driving scheme includes a touch panel including input lines and output lines, the touch panel causes a change in mutual capacitance in response to touch. Processing circuitry generates transmission signals to the input lines as a result of an encoding operation on a first matrix having an inverse matrix, each of the transmission signals has a first polarity or a second polarity opposite in phase to the first polarity; outputs the transmission signals in an unbalanced period when the sum of phases of the transmission signals is greater than 0; receives receiving signals through the output lines; and decodes the receiving signals based on the first matrix, the receiving signals generated by the change in the mutual capacitance in response to the touch.

    DISPLAY DEVICE INCLUDING TOUCH SCREEN PANEL

    公开(公告)号:US20220197472A1

    公开(公告)日:2022-06-23

    申请号:US17550112

    申请日:2021-12-14

    Abstract: A display device, including: a touch screen panel including a touch panel and a display panel stacked under the touch panel; a touch driving circuit; and one or more rollers on which at least a portion of the touch screen panel is rolled. The touch panel may include receiving electrodes extending in a first axis direction and arranged in parallel in a second axis direction perpendicular to the first axis direction and driving electrodes extending in the second axis direction and arranged in parallel in the first axis direction. The display panel may include gate lines and source lines intersecting with the gate lines. The touch driving circuit may be configured to apply driving signals to the driving electrodes. The touch screen panel rolled on the one or more rollers may be unfolded as the one or more rollers slide in the first axis direction.

    METHOD FOR FABRICATING SEMICONDUCTOR DEVICES

    公开(公告)号:US20220115384A1

    公开(公告)日:2022-04-14

    申请号:US17242932

    申请日:2021-04-28

    Abstract: A method for fabricating a semiconductor device includes providing a substrate including a cell region and a core/peripheral region around the cell region, forming a gate insulating film on the substrate of the core/peripheral region, forming a first conductive film of a first conductive type on the gate insulating film, forming a diffusion blocking film within the first conductive film, the diffusion blocking film being spaced apart from the gate insulating film in a vertical direction, after forming the diffusion blocking film, forming an impurity pattern including impurities within the first conductive film, diffusing the impurities through a heat treatment process to form a second conductive film of a second conductive type and forming a metal gate electrode on the second conductive film, wherein the diffusion blocking film includes helium (He) and/or argon (Ar).

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