公开(公告)号：US20240203793A1

公开(公告)日：2024-06-20

申请号：US18141313

申请日：2023-04-28

Applicant: Samsung Electronics Co., Ltd.

Inventor： Tae Sun Kim ,  Wonhyuk Hong ,  Jongjin Lee ,  Buhyun Ham ,  Kang-ill Seo

IPC: H01L21/768 ,  H01L21/74

CPC classification number: H01L21/76897 ,  H01L21/74 ,  H01L21/76834 ,  H01L21/76885

Abstract: In order to achieve higher contact quality for backside power distribution networks, provided is a backside contact to a semiconductor device having a positive slope and a dielectric sidewall liner, and methods for making the same.

公开(公告)号：US20230275021A1

公开(公告)日：2023-08-31

申请号：US17738393

申请日：2022-05-06

Applicant: Samsung Electronics Co., Ltd.

Inventor： BYOUNGHAK HONG ,  Jeonghyuk Yim ,  Inchan Hwang ,  Gilhwan Son ,  Seungyoung Lee ,  Saehan Park ,  Janggeun Lee ,  Myunghoon Jung ,  Seungchan Yun ,  Buhyun Ham ,  Kang-ILL Seo

IPC: H01L23/528 ,  H01L23/522 ,  H01L21/302 ,  H01L21/8234

CPC classification number: H01L23/5286 ,  H01L23/5283 ,  H01L23/5226 ,  H01L21/302 ,  H01L21/823475

Abstract: Integrated circuit devices may include a transistor, a passive device, a substrate extending between the transistor and the passive device and a power rail. The passive device may be spaced apart from the substrate. Each of the passive device and the power rail may have a first surface facing the substrate, and the first surface of the passive device is closer than the first surface of the power rail to the substrate.