公开(公告)号：US11881482B2

公开(公告)日：2024-01-23

申请号：US17852040

申请日：2022-06-28

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Gihee Cho ,  Sanghyuck Ahn ,  Hyun-Suk Lee ,  Jungoo Kang ,  Jin-Su Lee ,  Hongsik Chae

IPC: H01L27/10 ,  H10B12/00 ,  G11C8/14 ,  H01L49/02

CPC classification number: H01L27/101 ,  G11C8/14 ,  H01L28/60

Abstract: A semiconductor device includes; a bottom electrode on a substrate, a supporting pattern between the bottom electrode and an adjacent bottom electrode, a top electrode covering the bottom electrode and the supporting pattern, and a dielectric layer between the bottom electrode and the top electrode and between the supporting pattern and the top electrode. The bottom electrode may include a first portion including a seam and a second portion on the first portion, a top end of the second portion may be disposed at a height lower than an upper surface of the supporting pattern, and a portion of a bottom end of the second portion may be exposed to the seam.

公开(公告)号：US20210066066A1

公开(公告)日：2021-03-04

申请号：US16853796

申请日：2020-04-21

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hyun-Suk Lee ,  Jungoo Kang ,  Gihee Cho ,  Sanghyuck Ahn

IPC: H01L21/02 ,  H01L21/768 ,  H01L21/12 ,  H01L21/302

Abstract: Semiconductor devices are provided. A semiconductor device includes a first portion of a lower electrode structure on a substrate. The semiconductor device includes a first support pattern being in contact with a first portion of a sidewall of the first portion of the lower electrode structure. The semiconductor device includes a second portion of the lower electrode structure on a second portion of the sidewall of the first portion of the lower electrode structure. The semiconductor device includes an upper electrode on the second portion of the lower electrode structure and on the first support pattern. Moreover, the semiconductor device includes a dielectric layer between the upper electrode and the second portion of the lower electrode structure.

公开(公告)号：US20150044970A1

公开(公告)日：2015-02-12

申请号：US14453451

申请日：2014-08-06

Applicant: Samsung Electronics Co., Ltd.

Inventor： Gwang-Ha Park ,  Do-Hun Kim ,  Jin-Ho Ahn ,  Dai-IL Oh ,  Jae-In Lee ,  Hyun-Suk Lee

IPC: H04W76/02 ,  H04B10/11 ,  H04W4/00

CPC classification number: H04W76/14 ,  H04B5/00 ,  H04B10/11 ,  H04M1/7253 ,  H04M2250/04 ,  H04W4/80 ,  H04W8/005 ,  H04W76/10 ,  H04W88/06

Abstract: A method for establishing a short range connection includes transmitting a first data to an external device through infrared communication, the first data including information on a short range wireless communication other than the infrared communication, the short range wireless communication being supported by an electronic device, establishing the short range wireless communication with the external device on the basis of the first data, and transmitting a second data to the external device through the short range wireless communication. An electronic device includes at least one processor configured to transmit a first data to an external device through infrared communication, the first data including information on a short range wireless communication other than the infrared communication, the short range wireless communication being supported by an electronic device, establish the short range wireless communication with the external device on the basis of the first data.

Abstract translation: 用于建立短距离连接的方法包括：通过红外通信将第一数据发送到外部设备，所述第一数据包括关于红外通信以外的短距离无线通信的信息，所述短距离无线通信由电子设备支持， 基于第一数据建立与外部设备的短距离无线通信，并通过短距离无线通信将外部设备发送第二数据。 电子设备包括至少一个处理器，其被配置为通过红外通信将第一数据发送到外部设备，所述第一数据包括关于红外通信以外的短距离无线通信的信息，所述短距离无线通信由电子设备支持 根据第一个数据建立与外部设备的短距离无线通信。

公开(公告)号：US12255065B2

公开(公告)日：2025-03-18

申请号：US18529024

申请日：2023-12-05

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hyun-Suk Lee ,  Jungoo Kang ,  Gihee Cho ,  Sanghyuck Ahn

IPC: H01L21/02 ,  H01L21/12 ,  H01L21/302 ,  H01L21/768

Abstract: A method of manufacturing a semiconductor device includes: forming electrode holes by etching a mold structure including a mold layer and a support layer which are stacked on a substrate; forming lower electrode pillars filling the electrode holes; etching a portion of the support layer between the lower electrode pillars to form a support pattern having a through-hole exposing a portion of a top surface of the mold layer; removing the mold layer through the through-hole to expose sidewalls of the lower electrode pillars; and selectively forming lower electrode patterns on the sidewalls and top surfaces of the lower electrode pillars.

公开(公告)号：US11875992B2

公开(公告)日：2024-01-16

申请号：US17851244

申请日：2022-06-28

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hyun-Suk Lee ,  Jungoo Kang ,  Gihee Cho ,  Sanghyuck Ahn

IPC: H01L21/02 ,  H01L21/302 ,  H01L21/12 ,  H01L21/768

CPC classification number: H01L21/0228 ,  H01L21/12 ,  H01L21/302 ,  H01L21/76885

Abstract: Semiconductor devices are provided. A semiconductor device includes a first portion of a lower electrode structure on a substrate. The semiconductor device includes a first support pattern being in contact with a first portion of a sidewall of the first portion of the lower electrode structure. The semiconductor device includes a second portion of the lower electrode structure on a second portion of the sidewall of the first portion of the lower electrode structure. The semiconductor device includes an upper electrode on the second portion of the lower electrode structure and on the first support pattern. Moreover, the semiconductor device includes a dielectric layer between the upper electrode and the second portion of the lower electrode structure.

公开(公告)号：US11812601B2

公开(公告)日：2023-11-07

申请号：US17220411

申请日：2021-04-01

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jun Goo Kang ,  Sang Hyuck Ahn ,  Sang Yeol Kang ,  Jin-Su Lee ,  Hyun-Suk Lee ,  Gi Hee Cho ,  Hong Sik Chae

IPC: H10B12/00 ,  H01L49/02

CPC classification number: H10B12/30 ,  H01L28/75

Abstract: A semiconductor device includes a substrate, first and second supporter patterns stacked sequentially on the substrate in a first direction and spaced apart from an upper surface of the substrate, a lower electrode hole that extends through the first and second supporter patterns on the substrate in the first direction, an interface film on side walls and a bottom surface of the lower electrode hole, a lower electrode inside of the lower electrode hole on the interface film, a capacitor dielectric film that is in physical contact with side walls of the interface film, an uppermost surface of the interface film, and an uppermost surface of the lower electrode, the uppermost surface of the interface film is formed on a same plane as an upper surface of the second supporter pattern.

公开(公告)号：US20150061074A1

公开(公告)日：2015-03-05

申请号：US14340923

申请日：2014-07-25

Applicant: Samsung ELectronics Co., Ltd.

Inventor： Hyun-Suk Lee ,  Tae-Kyun Kim ,  Jin-Su Lee ,  Dong-Kyun Park ,  Jong-Myeong Lee

IPC: H01L49/02 ,  H01L27/108

CPC classification number: H01L28/75 ,  H01L27/1085 ,  H01L28/90

Abstract: A semiconductor device includes a MIM capacitor on a substrate. The MIM capacitor includes a dielectric region and first and second electrodes on opposite sides of the dielectric region. At least one of the first and second electrodes, e.g., an upper electrode, includes an oxygen diffusion blocking material, e.g., oxygen atoms, at a concentration that decreases in a direction away from the dielectric region. The at least one of the first and second electrodes may include a first layer having a first concentration of the oxygen diffusion blocking material and a second layer on the first layer and having a second concentration of the oxygen diffusion blocking material less than the first concentration. The at least one of the first and second electrodes may further include a third layer on the second layer and having a concentration of the oxygen diffusion blocking material less than the second concentration.

Abstract translation: 半导体器件在衬底上包括MIM电容器。 MIM电容器包括电介质区域和在电介质区域的相对侧上的第一和第二电极。 第一电极和第二电极中的至少一个，例如上电极，包括氧离子阻挡材料，例如氧原子，其浓度在远离电介质区域的方向上减小。 第一和第二电极中的至少一个可以包括具有第一浓度的氧扩散阻挡材料的第一层和第一层上的第二层，并且具有小于第一浓度的第二浓度的氧扩散阻挡材料。 第一和第二电极中的至少一个还可以包括第二层上的第三层，并且具有小于第二浓度的氧扩散阻塞材料的浓度。

公开(公告)号：US20240113122A1

公开(公告)日：2024-04-04

申请号：US18539062

申请日：2023-12-13

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Gihee Cho ,  Sanghyuck Ahn ,  Hyun-Suk Lee ,  Jungoo Kang ,  Jin-Su Lee ,  Hongsik Chae

IPC: H01L27/10 ,  G11C8/14

CPC classification number: H01L27/101 ,  G11C8/14 ,  H01L28/60

Abstract: A semiconductor device includes; a bottom electrode on a substrate, a supporting pattern between the bottom electrode and an adjacent bottom electrode, a top electrode covering the bottom electrode and the supporting pattern, and a dielectric layer between the bottom electrode and the top electrode and between the supporting pattern and the top electrode. The bottom electrode may include a first portion including a seam and a second portion on the first portion, a top end of the second portion may be disposed at a height lower than an upper surface of the supporting pattern, and a portion of a bottom end of the second portion may be exposed to the seam.

公开(公告)号：US20220328303A1

公开(公告)日：2022-10-13

申请号：US17851244

申请日：2022-06-28

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hyun-Suk Lee ,  Jungoo Kang ,  Gihee Cho ,  Sanghyuck Ahn

IPC: H01L21/02 ,  H01L21/302 ,  H01L21/12 ,  H01L21/768

Abstract: Semiconductor devices are provided. A semiconductor device includes a first portion of a lower electrode structure on a substrate. The semiconductor device includes a first support pattern being in contact with a first portion of a sidewall of the first portion of the lower electrode structure. The semiconductor device includes a second portion of the lower electrode structure on a second portion of the sidewall of the first portion of the lower electrode structure. The semiconductor device includes an upper electrode on the second portion of the lower electrode structure and on the first support pattern. Moreover, the semiconductor device includes a dielectric layer between the upper electrode and the second portion of the lower electrode structure.

公开(公告)号：US11411075B2

公开(公告)日：2022-08-09

申请号：US17189700

申请日：2021-03-02

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Gihee Cho ,  Sangyeol Kang ,  Jungoo Kang ,  Taekyun Kim ,  Jiwoon Park ,  Sanghyuck Ahn ,  Jin-Su Lee ,  Hyun-Suk Lee ,  Hongsik Chae

IPC: H01L49/02 ,  H01L27/108

Abstract: A semiconductor device and a method of manufacturing the same, the device including a plurality of lower electrodes on a semiconductor substrate; a support pattern connecting the lower electrodes at sides of the lower electrodes; and a dielectric layer covering the lower electrodes and the support pattern, wherein each of the plurality of lower electrodes includes a pillar portion extending in a vertical direction perpendicular to a top surface of the semiconductor substrate; and a protrusion protruding from a sidewall of the pillar portion so as to be in contact with the support pattern, the pillar portion includes a conductive material, the protrusion includes a same conductive material as the pillar portion and is further doped with impurities.