公开(公告)号：US20150061074A1

公开(公告)日：2015-03-05

申请号：US14340923

申请日：2014-07-25

Applicant: Samsung ELectronics Co., Ltd.

Inventor： Hyun-Suk Lee ,  Tae-Kyun Kim ,  Jin-Su Lee ,  Dong-Kyun Park ,  Jong-Myeong Lee

IPC: H01L49/02 ,  H01L27/108

CPC classification number: H01L28/75 ,  H01L27/1085 ,  H01L28/90

Abstract: A semiconductor device includes a MIM capacitor on a substrate. The MIM capacitor includes a dielectric region and first and second electrodes on opposite sides of the dielectric region. At least one of the first and second electrodes, e.g., an upper electrode, includes an oxygen diffusion blocking material, e.g., oxygen atoms, at a concentration that decreases in a direction away from the dielectric region. The at least one of the first and second electrodes may include a first layer having a first concentration of the oxygen diffusion blocking material and a second layer on the first layer and having a second concentration of the oxygen diffusion blocking material less than the first concentration. The at least one of the first and second electrodes may further include a third layer on the second layer and having a concentration of the oxygen diffusion blocking material less than the second concentration.

Abstract translation: 半导体器件在衬底上包括MIM电容器。 MIM电容器包括电介质区域和在电介质区域的相对侧上的第一和第二电极。 第一电极和第二电极中的至少一个，例如上电极，包括氧离子阻挡材料，例如氧原子，其浓度在远离电介质区域的方向上减小。 第一和第二电极中的至少一个可以包括具有第一浓度的氧扩散阻挡材料的第一层和第一层上的第二层，并且具有小于第一浓度的第二浓度的氧扩散阻挡材料。 第一和第二电极中的至少一个还可以包括第二层上的第三层，并且具有小于第二浓度的氧扩散阻塞材料的浓度。

公开(公告)号：US09520460B2

公开(公告)日：2016-12-13

申请号：US14340923

申请日：2014-07-25

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hyun-Suk Lee ,  Tae-Kyun Kim ,  Jin-Su Lee ,  Dong-Kyun Park ,  Jong-Myeong Lee

IPC: H01L49/02 ,  H01L27/108

CPC classification number: H01L28/75 ,  H01L27/1085 ,  H01L28/90

Abstract: A semiconductor device includes a MIM capacitor on a substrate. The MIM capacitor includes a dielectric region and first and second electrodes on opposite sides of the dielectric region. At least one of the first and second electrodes, e.g., an upper electrode, includes an oxygen diffusion blocking material, e.g., oxygen atoms, at a concentration that decreases in a direction away from the dielectric region. The at least one of the first and second electrodes may include a first layer having a first concentration of the oxygen diffusion blocking material and a second layer on the first layer and having a second concentration of the oxygen diffusion blocking material less than the first concentration. The at least one of the first and second electrodes may further include a third layer on the second layer and having a concentration of the oxygen diffusion blocking material less than the second concentration.

Abstract translation: 半导体器件在衬底上包括MIM电容器。 MIM电容器包括电介质区域和在电介质区域的相对侧上的第一和第二电极。 第一电极和第二电极中的至少一个，例如上电极，包括氧离子阻挡材料，例如氧原子，其浓度在远离电介质区域的方向上减小。 第一和第二电极中的至少一个可以包括具有第一浓度的氧扩散阻挡材料的第一层和第一层上的第二层，并且具有小于第一浓度的第二浓度的氧扩散阻塞材料。 第一和第二电极中的至少一个还可以包括第二层上的第三层，并且具有小于第二浓度的氧扩散阻塞材料的浓度。