公开(公告)号：US20220037325A1

公开(公告)日：2022-02-03

申请号：US17220411

申请日：2021-04-01

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jun Goo Kang ,  Sang Hyuck Ahn ,  Sang Yeol Kang ,  Jin-Su Lee ,  Hyun-Suk Lee ,  Gi Hee Cho ,  Hong Sik Chae

IPC: H01L27/108 ,  H01L49/02

Abstract: A semiconductor device includes a substrate, first and second supporter patterns stacked sequentially on the substrate in a first direction and spaced apart from an upper surface of the substrate, a lower electrode hole that extends through the first and second supporter patterns on the substrate in the first direction, an interface film on side walls and a bottom surface of the lower electrode hole, a lower electrode inside of the lower electrode hole on the interface film, a capacitor dielectric film that is in physical contact with side walls of the interface film, an uppermost surface of the interface film, and an uppermost surface of the lower electrode, the uppermost surface of the interface film is formed on a same plane as an upper surface of the second supporter pattern.

公开(公告)号：US11812601B2

公开(公告)日：2023-11-07

申请号：US17220411

申请日：2021-04-01

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jun Goo Kang ,  Sang Hyuck Ahn ,  Sang Yeol Kang ,  Jin-Su Lee ,  Hyun-Suk Lee ,  Gi Hee Cho ,  Hong Sik Chae

IPC: H10B12/00 ,  H01L49/02

CPC classification number: H10B12/30 ,  H01L28/75

Abstract: A semiconductor device includes a substrate, first and second supporter patterns stacked sequentially on the substrate in a first direction and spaced apart from an upper surface of the substrate, a lower electrode hole that extends through the first and second supporter patterns on the substrate in the first direction, an interface film on side walls and a bottom surface of the lower electrode hole, a lower electrode inside of the lower electrode hole on the interface film, a capacitor dielectric film that is in physical contact with side walls of the interface film, an uppermost surface of the interface film, and an uppermost surface of the lower electrode, the uppermost surface of the interface film is formed on a same plane as an upper surface of the second supporter pattern.

公开(公告)号：US10468264B2

公开(公告)日：2019-11-05

申请号：US15613737

申请日：2017-06-05

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jae Soon Lim ,  Gyu Hee Park ,  Youn Joung Cho ,  Hyun Suk Lee ,  Gi Hee Cho

IPC: H01L21/30 ,  C30B25/14 ,  C30B29/06 ,  H01L21/768 ,  H01L23/29 ,  H01L23/528

Abstract: A method of fabricating a semiconductor device includes feeding a suppression gas, a source gas, a reactive gas, and a purge gas including an inert gas, into a process chamber in which a substrate is disposed. The suppression gas suppresses the physical adsorption of the source gas onto the substrate. As a result, a thin film is formed on the substrate.