公开(公告)号：US10468264B2

公开(公告)日：2019-11-05

申请号：US15613737

申请日：2017-06-05

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jae Soon Lim ,  Gyu Hee Park ,  Youn Joung Cho ,  Hyun Suk Lee ,  Gi Hee Cho

IPC: H01L21/30 ,  C30B25/14 ,  C30B29/06 ,  H01L21/768 ,  H01L23/29 ,  H01L23/528

Abstract: A method of fabricating a semiconductor device includes feeding a suppression gas, a source gas, a reactive gas, and a purge gas including an inert gas, into a process chamber in which a substrate is disposed. The suppression gas suppresses the physical adsorption of the source gas onto the substrate. As a result, a thin film is formed on the substrate.