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公开(公告)号：US20240365596A1
公开(公告)日：2024-10-31
申请号：US18425686
申请日：2024-01-29
Applicant: Samsung Display Co., Ltd.
Inventor： Joonyong Park , Hyuneok Shin , Sukyoung Yang , Dongmin Lee , Yung Bin Chung
IPC: H10K59/122 , H10K59/12
CPC classification number: H10K59/122 , H10K59/1201
Abstract: A display panel includes a pixel defining layer in which a light emitting opening is defined, a barrier wall which is on the pixel defining layer and electrically conductive, the barrier wall including a first lower layer which is electrically conductive, a first upper layer which faces the first lower layer and is electrically conductive, a second lower layer between the first lower layer and the first upper layer, the second lower layer defining an opening therein which is adjacent to the light emitting opening, and the first upper layer electrically connected to the first lower layer through the opening of the second lower layer, and a light emitting element including a first electrode, an emission pattern and a second electrode in the light emitting opening, and the second electrode contacting the first lower layer of the barrier wall.
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公开(公告)号：US12035612B2
公开(公告)日：2024-07-09
申请号：US17744543
申请日：2022-05-13
Applicant: Samsung Display Co., LTD.
Inventor： Yeoung Keol Woo , Yung Bin Chung , Chul Min Bae , Ji Hye Han , Eun Jin Kwak
IPC: H10K77/10 , H10K59/12 , H10K59/126 , H10K71/00 , H10K71/80 , H10K102/00
CPC classification number: H10K77/111 , H10K59/126 , H10K71/00 , H10K71/80 , H10K59/1201 , H10K2102/00 , H10K2102/311 , H10K2102/351
Abstract: A method of manufacturing a display device includes providing an inorganic layer on a carrier substrate, providing a first flexible substrate on the inorganic layer, providing a first shielding layer including a metal on the first flexible substrate, providing a first barrier layer on the first shielding layer, and providing a thin film transistor layer on the first barrier layer. The inorganic layer includes at least one material selected from silicon nitride (SiNx), silicon oxide (SiOx), and silicon oxynitride (SiOxNy), and a thickness of the inorganic layer is in a range from about 10 Å to about 6000 Å.
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公开(公告)号：US10672911B2
公开(公告)日：2020-06-02
申请号：US16451593
申请日：2019-06-25
Applicant: SAMSUNG DISPLAY CO., LTD.
Inventor： Seung Ho Jung , Chaun Gi Choi , Hye Young Park , Eun Young Lee , Joo Hee Jeon , Eun Jeong Cho , Bo Geon Jeon , Yung Bin Chung
Abstract: A thin film transistor array panel device comprises: a base substrate; a barrier layer disposed over the base substrate and comprising a plurality of transparent material layers; and an array of thin film transistors disposed over the barrier layer. A difference between a refractive index of the barrier layer and a refractive index of the base substrate may be within about 6%. The transparent material layers may be arranged such that the transparent material layers having compressive residual stress and the transparent material layers having tensile residual stress are alternately stacked. Each of the transparent material layers may comprise silicon oxynitride (SiON).
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公开(公告)号：US09647237B2
公开(公告)日：2017-05-09
申请号：US15045688
申请日：2016-02-17
Applicant: SAMSUNG DISPLAY CO., LTD.
Inventor： Seung Ho Jung , Chaun Gi Choi , Hye Young Park , Eun Young Lee , Joo Hee Jeon , Eun Jeong Cho , Bo Geon Jeon , Yung Bin Chung
CPC classification number: H01L29/78603 , H01L27/1218 , H01L27/1225 , H01L27/3244 , H01L27/3262 , H01L29/7849 , H01L29/78633 , H01L29/7869 , H01L51/0097 , H01L51/5256 , H01L2251/5338 , H01L2251/55 , Y02E10/549
Abstract: A thin film transistor array panel device comprises: a base substrate; a barrier layer disposed over the base substrate and comprising a plurality of transparent material layers; and an array of thin film transistors disposed over the barrier layer. A difference between a refractive index of the barrier layer and a refractive index of the base substrate may be within about 6%. The transparent material layers may be arranged such that the transparent material layers having compressive residual stress and the transparent material layers having tensile residual stress are alternately stacked. Each of the transparent material layers may comprise silicon oxynitride (SiON).
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公开(公告)号：US11158693B2
公开(公告)日：2021-10-26
申请号：US16575845
申请日：2019-09-19
Applicant: Samsung Display Co., Ltd.
Inventor： Yung Bin Chung , Yeoungkeol Woo , Kwanghyun Kim , Sangwoo Sohn , Dokeun Song , Sangwook Lee , Heon Sik Ha
Abstract: A display apparatus includes a base substrate, an active pattern disposed on the base substrate, a gate insulation layer disposed on the active pattern, a gate electrode disposed on the gate insulation layer and overlapping the active pattern, a first insulation layer disposed on the gate electrode and having a total amount of hydrogen of about 5 atomic percent (at. %) to about 30 at. %, and a source electrode and a drain electrode which are disposed on the first insulation layer and are electrically connected to the active pattern.
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Patent Agency Ranking
公开(公告)号：US20200310499A1
公开(公告)日：2020-10-01
申请号：US16749555
申请日：2020-01-22
Applicant: SAMSUNG DISPLAY CO., LTD.
Inventor： Yung Bin Chung , Yeoung Keol Woo , Seung Wook Kwon
Abstract: A display device is provided including a substrate including a first organic layer and a first barrier layer. A shield layer is disposed between the first organic layer and the first barrier layer, and the shield layer includes a metal.
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公开(公告)号：US10361312B2
公开(公告)日：2019-07-23
申请号：US15480102
申请日：2017-04-05
Applicant: Samsung Display Co., Ltd.
Inventor： Seung Ho Jung , Chaun Gi Choi , Hye Young Park , Eun Young Lee , Joo Hee Jeon , Eun Jeong Cho , Bo Geon Jeon , Yung Bin Chung
Abstract: A thin film transistor array panel device comprises: a base substrate; a barrier layer disposed over the base substrate and comprising a plurality of transparent material layers; and an array of thin film transistors disposed over the barrier layer. A difference between a refractive index of the barrier layer and a refractive index of the base substrate may be within about 6%. The transparent material layers may be arranged such that the transparent material layers having compressive residual stress and the transparent material layers having tensile residual stress are alternately stacked. Each of the transparent material layers may comprise silicon oxynitride (SiON).
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公开(公告)号：US09536908B2
公开(公告)日：2017-01-03
申请号：US14799995
申请日：2015-07-15
Applicant: Samsung Display Co., Ltd.
Inventor： Yung Bin Chung , Chul-Hyun Baek , Eun Jeong Cho , Jung Yun Jo
IPC: H01L27/14 , H01L27/12 , H01L29/66 , H01L29/786 , H01L29/417 , H01L21/02
CPC classification number: H01L27/124 , H01L21/0217 , H01L27/1248 , H01L27/1259 , H01L29/41733 , H01L29/66765 , H01L29/78606 , H01L29/78669 , H01L29/78678
Abstract: A thin-film transistor array panel includes an insulation substrate, a gate line disposed on the insulation substrate, a gate insulating layer disposed on the gate line, a semiconductor layer disposed on the gate insulating layer, a data line disposed on the semiconductor layer and including a source electrode, a drain electrode disposed on the semiconductor layer and facing the source electrode, a first electrode disposed on the gate insulating layer, a first passivation layer disposed on the first electrode and including silicon nitride, a second passivation layer disposed on the first passivation and including silicon nitride, and a second electrode disposed on the passivation layer, in which a first ratio of nitrogen-hydrogen bonds to silicon-hydrogen bonds in the first passivation layer is different from a second ratio of nitrogen-hydrogen bonds to silicon-hydrogen bonds in the second passivation layer.
Abstract translation: 薄膜晶体管阵列面板包括绝缘基板，设置在绝缘基板上的栅极线，设置在栅极线上的栅极绝缘层，设置在栅极绝缘层上的半导体层，设置在半导体层上的数据线，以及 包括源电极，设置在半导体层上并面对源电极的漏电极，设置在栅绝缘层上的第一电极，设置在第一电极上并包括氮化硅的第一钝化层，设置在第一电极上的第二钝化层 第一钝化并且包括氮化硅，以及设置在钝化层上的第二电极，其中第一钝化层中氮 - 氢键与硅 - 氢键的第一比例不同于氮 - 氢键与硅的第二比率 在第二钝化层中的氢键。
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公开(公告)号：US12004381B2
公开(公告)日：2024-06-04
申请号：US17504927
申请日：2021-10-19
Applicant: Samsung Display Co., Ltd.
Inventor： Yung Bin Chung , Yeoungkeol Woo , Kwanghyun Kim , Sangwoo Sohn , Dokeun Song , Sangwook Lee , Heon Sik Ha
IPC: H10K59/124 , H01L27/12 , H10K59/121
CPC classification number: H10K59/124 , H01L27/1237 , H10K59/1213
Abstract: A display apparatus includes a base substrate, an active pattern disposed on the base substrate, a gate insulation layer disposed on the active pattern, a gate electrode disposed on the gate insulation layer and overlapping the active pattern, a first insulation layer disposed on the gate electrode and having a total amount of hydrogen of about 5 atomic percent (at. %) to about 30 at. %, and a source electrode and a drain electrode which are disposed on the first insulation layer and are electrically connected to the active pattern.
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公开(公告)号：US11335869B2
公开(公告)日：2022-05-17
申请号：US16906866
申请日：2020-06-19
Applicant: Samsung Display Co., LTD.
Inventor： Yeoung Keol Woo , Yung Bin Chung , Chul Min Bae , Ji Hye Han , Eun Jin Kwak
Abstract: A method of manufacturing a display device includes providing an inorganic layer on a carrier substrate, providing a first flexible substrate on the inorganic layer, providing a first shielding layer including a metal on the first flexible substrate, providing a first barrier layer on the first shielding layer, and providing a thin film transistor layer on the first barrier layer. The inorganic layer includes at least one material selected from silicon nitride (SiNx), silicon oxide (SiOx), and silicon oxynitride (SiOxNy), and a thickness of the inorganic layer is in a range from about 10 Å to about 6000 Å.
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