公开(公告)号：US09281406B2

公开(公告)日：2016-03-08

申请号：US14458415

申请日：2014-08-13

Applicant: Samsung Display Co., Ltd.

Inventor： Ki-Won Kim ,  Kap Soo Yoon ,  Jiyun Hong

IPC: H01L23/544 ,  H01L29/786 ,  H01L29/66 ,  H01L27/12

CPC classification number: H01L29/7869 ,  H01L27/1225 ,  H01L27/1288 ,  H01L29/66969

Abstract: A method of fabricating a thin-film transistor substrate includes disposing an oxide semiconductor layer on an insulating substrate, performing a thermal treatment process to the oxide semiconductor layer, providing an alignment mark, a source electrode, a drain electrode, and an oxide semiconductor pattern, after the thermal treatment process, providing a gate electrode, after the thermal treatment process, and providing a pixel electrode connected to the drain electrode.

Abstract translation: 制造薄膜晶体管基板的方法包括在绝缘基板上设置氧化物半导体层，对氧化物半导体层进行热处理工艺，提供对准标记，源电极，漏电极和氧化物半导体图案 在热处理过程之后，在热处理工艺之后提供栅电极，并提供连接到漏电极的像素电极。

公开(公告)号：US20220173198A1

公开(公告)日：2022-06-02

申请号：US17402696

申请日：2021-08-16

Applicant: SAMSUNG DISPLAY CO., LTD

Inventor： Jongin Kim ,  Hyunseong Kang ,  Joongeol Kim ,  Seokhwan Bang ,  Seungsok Son ,  Woogeun Lee ,  Youngjae Jeon ,  Soojung Chae ,  Jiyun Hong

IPC: H01L27/32

Abstract: A display apparatus includes a substrate including a display area and a peripheral area outside the display area, a thin film transistor arranged on the substrate corresponding to the display area and including a semiconductor layer and a gate electrode, a pad electrode arranged on the substrate corresponding to the peripheral area and including a material the same as that of the semiconductor layer, and a first insulating layer arranged on the thin film transistor and the pad electrode and including an opening that partially exposes the pad electrode. Accordingly, failure to perform a normal operation by a pixel circuit and a light-emitting element may be prevented.

公开(公告)号：US11980083B2

公开(公告)日：2024-05-07

申请号：US16832583

申请日：2020-03-27

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Keum Hee Lee ,  Joongeol Kim ,  Kap Soo Yoon ,  Woo Geun Lee ,  Seung-Ha Choi ,  Jiyun Hong

IPC: H01L51/56 ,  H10K71/00 ,  H10K71/20 ,  H10K71/60 ,  H10K102/10

CPC classification number: H10K71/00 ,  H10K71/233 ,  H10K71/60 ,  H10K2102/103

Abstract: A method of manufacturing a thin film transistor includes: forming an active pattern on a substrate; forming an insulating layer and a gate electrode layer on the active pattern in order; forming a photoresist pattern on the gate electrode layer; forming a preliminary gate electrode by wet etching the gate electrode layer using the photoresist pattern; forming an insulating pattern by dry etching the insulating layer using the photoresist pattern and the preliminary gate electrode; and forming a gate electrode by wet etching a side surface of the preliminary gate electrode using the photoresist pattern.

公开(公告)号：US20220139970A1

公开(公告)日：2022-05-05

申请号：US17358640

申请日：2021-06-25

Applicant: Samsung Display Co., Ltd.

Inventor： Joongeol Kim ,  Seulki Kim ,  Youngjae Jeon ,  Hyunseong Kang ,  Seungrae Kim ,  Jongin KIM ,  Seokhwan Bang ,  Seungsok Son ,  Donghoon Shin ,  Kapsoo Yoon ,  Kwangsoo Lee ,  Woogeun Lee ,  Jaehyun Lee ,  Kisu Jin ,  Junewhan Choi ,  Jongmoo Huh ,  Jiyun Hong

IPC: H01L27/12 ,  H01L27/32 ,  H01L51/56 ,  H01L25/16

Abstract: A display apparatus includes a substrate including a display area and a peripheral area adjacent to the display area, a thin-film transistor located in the display area of the substrate and including a semiconductor layer and a gate electrode overlapping a channel region of the semiconductor layer, a conductive layer disposed between the substrate and the semiconductor layer and including a first electrode located in the display area of the substrate and a pad electrode located in the peripheral area of the substrate, and a first insulating layer disposed between the conductive layer and the semiconductor layer and having a first opening that exposes at least a portion of an upper surface of the pad electrode.

公开(公告)号：US12108638B2

公开(公告)日：2024-10-01

申请号：US17402696

申请日：2021-08-16

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Jongin Kim ,  Hyunseong Kang ,  Joongeol Kim ,  Seokhwan Bang ,  Seungsok Son ,  Woogeun Lee ,  Youngjae Jeon ,  Soojung Chae ,  Jiyun Hong

IPC: H10K59/131 ,  G09G3/3233 ,  H01L27/12 ,  H01L29/24 ,  H01L29/786 ,  H10K59/121

CPC classification number: H10K59/131 ,  H10K59/1213 ,  H10K59/1216 ,  G09G3/3233 ,  G09G2300/0809 ,  H01L27/1225 ,  H01L27/124 ,  H01L27/1255 ,  H01L29/24 ,  H01L29/7869

Abstract: A display apparatus includes a substrate including a display area and a peripheral area outside the display area, a thin film transistor arranged on the substrate corresponding to the display area and including a semiconductor layer and a gate electrode, a pad electrode arranged on the substrate corresponding to the peripheral area and including a material the same as that of the semiconductor layer, and a first insulating layer arranged on the thin film transistor and the pad electrode and including an opening that partially exposes the pad electrode. Accordingly, failure to perform a normal operation by a pixel circuit and a light-emitting element may be prevented.

公开(公告)号：US12002821B2

公开(公告)日：2024-06-04

申请号：US17358640

申请日：2021-06-25

Applicant: Samsung Display Co., Ltd.

Inventor： Joongeol Kim ,  Seulki Kim ,  Youngjae Jeon ,  Hyunseong Kang ,  Seungrae Kim ,  Jongin Kim ,  Seokhwan Bang ,  Seungsok Son ,  Donghoon Shin ,  Kapsoo Yoon ,  Kwangsoo Lee ,  Woogeun Lee ,  Jaehyun Lee ,  Kisu Jin ,  Junewhan Choi ,  Jongmoo Huh ,  Jiyun Hong

IPC: H01L27/12 ,  H01L25/16 ,  H10K59/124 ,  H10K59/131 ,  H10K71/00 ,  H10K59/12

CPC classification number: H01L27/1288 ,  H01L25/167 ,  H01L27/124 ,  H01L27/1248 ,  H10K59/124 ,  H10K59/131 ,  H10K71/00 ,  H10K59/1201

Abstract: A display apparatus includes a substrate including a display area and a peripheral area adjacent to the display area, a thin-film transistor located in the display area of the substrate and including a semiconductor layer and a gate electrode overlapping a channel region of the semiconductor layer, a conductive layer disposed between the substrate and the semiconductor layer and including a first electrode located in the display area of the substrate and a pad electrode located in the peripheral area of the substrate, and a first insulating layer disposed between the conductive layer and the semiconductor layer and having a first opening that exposes at least a portion of an upper surface of the pad electrode.

公开(公告)号：US10209585B2

公开(公告)日：2019-02-19

申请号：US15595111

申请日：2017-05-15

Applicant: Samsung Display Co., Ltd.

Inventor： Dong-Ju Yang ,  Seungjin Kim ,  Beomsoo Park ,  Hyungchul Kim ,  Eunhye Park ,  Jeongeum Lee ,  Junki Lee ,  Jiyun Hong

IPC: H01L29/12 ,  G02F1/1343 ,  G02F1/1333 ,  G02F1/1335 ,  G02F1/1362 ,  G02F1/1368 ,  G02F1/137 ,  H01L27/12 ,  H01L29/786

Abstract: A display panel includes a first base substrate, a gate line disposed on the first base substrate and extending in a first direction, a gate electrode electrically connected to the gate line, a thin film transistor including an active pattern which includes a source area, a drain area and a channel area overlapping the gate electrode, a common electrode disposed on the first base substrate, where a common voltage is applied to the common electrode, an auxiliary common electrode line electrically connected to the common electrode, and including an opaque metal, a pixel electrode electrically connected to the thin film transistor, and disposed on the common electrode to overlap the common electrode, and a cover electrode connected to the auxiliary common electrode line, and overlapping the channel area.