摘要:
A method of fabricating a thin-film transistor substrate includes disposing an oxide semiconductor layer on an insulating substrate, performing a thermal treatment process to the oxide semiconductor layer, providing an alignment mark, a source electrode, a drain electrode, and an oxide semiconductor pattern, after the thermal treatment process, providing a gate electrode, after the thermal treatment process, and providing a pixel electrode connected to the drain electrode.
摘要:
A display apparatus includes a substrate including a display area and a peripheral area outside the display area, a thin film transistor arranged on the substrate corresponding to the display area and including a semiconductor layer and a gate electrode, a pad electrode arranged on the substrate corresponding to the peripheral area and including a material the same as that of the semiconductor layer, and a first insulating layer arranged on the thin film transistor and the pad electrode and including an opening that partially exposes the pad electrode. Accordingly, failure to perform a normal operation by a pixel circuit and a light-emitting element may be prevented.
摘要:
A method of manufacturing a thin film transistor includes: forming an active pattern on a substrate; forming an insulating layer and a gate electrode layer on the active pattern in order; forming a photoresist pattern on the gate electrode layer; forming a preliminary gate electrode by wet etching the gate electrode layer using the photoresist pattern; forming an insulating pattern by dry etching the insulating layer using the photoresist pattern and the preliminary gate electrode; and forming a gate electrode by wet etching a side surface of the preliminary gate electrode using the photoresist pattern.
摘要:
A display apparatus includes a substrate including a display area and a peripheral area adjacent to the display area, a thin-film transistor located in the display area of the substrate and including a semiconductor layer and a gate electrode overlapping a channel region of the semiconductor layer, a conductive layer disposed between the substrate and the semiconductor layer and including a first electrode located in the display area of the substrate and a pad electrode located in the peripheral area of the substrate, and a first insulating layer disposed between the conductive layer and the semiconductor layer and having a first opening that exposes at least a portion of an upper surface of the pad electrode.
摘要:
A display apparatus includes a substrate including a display area and a peripheral area outside the display area, a thin film transistor arranged on the substrate corresponding to the display area and including a semiconductor layer and a gate electrode, a pad electrode arranged on the substrate corresponding to the peripheral area and including a material the same as that of the semiconductor layer, and a first insulating layer arranged on the thin film transistor and the pad electrode and including an opening that partially exposes the pad electrode. Accordingly, failure to perform a normal operation by a pixel circuit and a light-emitting element may be prevented.
摘要:
A display apparatus includes a substrate including a display area and a peripheral area adjacent to the display area, a thin-film transistor located in the display area of the substrate and including a semiconductor layer and a gate electrode overlapping a channel region of the semiconductor layer, a conductive layer disposed between the substrate and the semiconductor layer and including a first electrode located in the display area of the substrate and a pad electrode located in the peripheral area of the substrate, and a first insulating layer disposed between the conductive layer and the semiconductor layer and having a first opening that exposes at least a portion of an upper surface of the pad electrode.
摘要:
A display panel includes a first base substrate, a gate line disposed on the first base substrate and extending in a first direction, a gate electrode electrically connected to the gate line, a thin film transistor including an active pattern which includes a source area, a drain area and a channel area overlapping the gate electrode, a common electrode disposed on the first base substrate, where a common voltage is applied to the common electrode, an auxiliary common electrode line electrically connected to the common electrode, and including an opaque metal, a pixel electrode electrically connected to the thin film transistor, and disposed on the common electrode to overlap the common electrode, and a cover electrode connected to the auxiliary common electrode line, and overlapping the channel area.