公开(公告)号：US20210359065A1

公开(公告)日：2021-11-18

申请号：US17123850

申请日：2020-12-16

Applicant: Samsung Display Co., Ltd.

Inventor： Youngjae JEON ,  Hyunseong KANG ,  Jongin KIM ,  Seokhwan BANG ,  Seungsok SON ,  Junewhan CHOI

IPC: H01L27/32 ,  H01L51/56

Abstract: A display apparatus includes a thin-film transistor located in a display area and including a semiconductor layer and a gate electrode; a storage capacitor located in the display area and including a first capacitor plate, a second capacitor plate, and a dummy capacitor plate overlapping each other; a light-emitting diode electrically connected to the thin-film transistor and the storage capacitor and including a pixel electrode, an interlayer, and a counter electrode; a pad located in a surrounding area adjacent to the display area; a lower electrode pattern layer disposed below the semiconductor layer, at least a portion of the lower electrode pattern layer overlapping the semiconductor layer; and a bridge electrode electrically connecting the semiconductor layer to the lower electrode pattern layer.

公开(公告)号：US20220139970A1

公开(公告)日：2022-05-05

申请号：US17358640

申请日：2021-06-25

Applicant: Samsung Display Co., Ltd.

Inventor： Joongeol Kim ,  Seulki Kim ,  Youngjae Jeon ,  Hyunseong Kang ,  Seungrae Kim ,  Jongin KIM ,  Seokhwan Bang ,  Seungsok Son ,  Donghoon Shin ,  Kapsoo Yoon ,  Kwangsoo Lee ,  Woogeun Lee ,  Jaehyun Lee ,  Kisu Jin ,  Junewhan Choi ,  Jongmoo Huh ,  Jiyun Hong

IPC: H01L27/12 ,  H01L27/32 ,  H01L51/56 ,  H01L25/16

Abstract: A display apparatus includes a substrate including a display area and a peripheral area adjacent to the display area, a thin-film transistor located in the display area of the substrate and including a semiconductor layer and a gate electrode overlapping a channel region of the semiconductor layer, a conductive layer disposed between the substrate and the semiconductor layer and including a first electrode located in the display area of the substrate and a pad electrode located in the peripheral area of the substrate, and a first insulating layer disposed between the conductive layer and the semiconductor layer and having a first opening that exposes at least a portion of an upper surface of the pad electrode.