知搜-全球专利检索

  1. Login
  2. Sign Up

Search Results

8 records (took 0.024 seconds)

    DISPLAY APPARATUS AND METHOD OF MANUFACTURING THE SAME
    2.
    发明申请
    DISPLAY APPARATUS AND METHOD OF MANUFACTURING THE SAME 有权

    公开(公告)号：US20230137236A1

    公开(公告)日：2023-05-04

    申请号：US17968609

    申请日：2022-10-18

    Applicant: Samsung Display Co., Ltd.

    Inventor： Jaehyun Lee ,  Seulki Kim ,  Seungha Choi ,  Kapsoo Yoon ,  Woogeun Lee

    IPC: H01L27/32 ,  G09G3/3233 ,  H01L51/56

    Abstract: A display apparatus includes: a substrate; a semiconductor layer on the substrate, formed of an oxide semiconductor, and including a channel semiconductor layer and a first semiconductor layer extending in a first direction from the channel semiconductor layer; a first metal layer on the first semiconductor layer, and located in the first semiconductor layer in a plan view; a first inorganic insulating layer covering the semiconductor layer and the first metal layer and including a first contact hole overlapping the first semiconductor layer and the first metal layer; a first electrode on the first inorganic insulating layer, overlapping the first semiconductor layer and the first metal layer, and electrically connected to the first metal layer and the first semiconductor layer connected to the first metal layer through the first contact hole.

    DISPLAY APPARATUS AND METHOD OF PROVIDING DISPLAY APPARATUS
    4.
    发明申请
    DISPLAY APPARATUS AND METHOD OF PROVIDING DISPLAY APPARATUS 有权

    公开(公告)号：US20230131708A1

    公开(公告)日：2023-04-27

    申请号：US17835415

    申请日：2022-06-08

    Applicant: Samsung Display Co., Ltd.

    Inventor： Jongbum Choi ,  Seulki Kim ,  Kapsoo Yoon ,  Woogeun Lee ,  Jaehyun Lee ,  Seungha Choi

    IPC: H01L27/32 ,  H01L51/56

    Abstract: A display apparatus includes a substrate, a semiconductor layer on the substrate, the semiconductor layer including an oxide semiconductor, a channel region and a first region which extends from the channel region to a first edge of the semiconductor layer and has a lower resistance than that of the channel region, a first inorganic insulating layer covering the semiconductor layer and including a first contact hole which overlaps the first region, a first electrode on the first inorganic insulating layer, overlapping the first region and electrically connected to the first region through the first contact hole, a gate electrode on the first inorganic insulating layer and overlapping the channel region, a second inorganic insulating layer covering the first electrode and the gate electrode, and a display element on the second inorganic insulating layer.

    DISPLAY APPARATUS AND METHOD OF MANUFACTURING THE SAME
    7.
    发明申请
    DISPLAY APPARATUS AND METHOD OF MANUFACTURING THE SAME 有权

    公开(公告)号：US20210343811A1

    公开(公告)日：2021-11-04

    申请号：US17246827

    申请日：2021-05-03

    Applicant: SAMSUNG DISPLAY CO., LTD.

    Inventor： Seulki Kim ,  Seungha Choi ,  Seungrae Kim ,  Hyun Kim ,  Kapsoo Yoon ,  Kwangsoo Lee ,  Jaehyun Lee ,  Jungkyoung Cho

    IPC: H01L27/32

    Abstract: A display apparatus includes a substrate with a display area and a peripheral area surrounding the display area, a thin-film transistor disposed on the display area of the substrate, a pad unit disposed on the peripheral area of the substrate, a first insulating layer disposed on the display area of the substrate and exposing the pad unit, the first insulating layer including a first portion disposed on the thin-film transistor, a second portion, and a third portion between the first portion and the second portion, and a light-emitting device disposed on the first portion of the first insulating layer and electrically connected to the thin-film transistor. A top surface of the first insulating layer includes a first top surface of the first portion, a second top surface of the second portion, and a connecting surface of the third portion. The first top surface of the first portion is higher than the second top surface of the second portion. The connecting surface connects the first top surface and the second top surface with each other and is sloped.

    Thin film transistor substrate and manufacturing method thereof
    8.
    发明授权
    Thin film transistor substrate and manufacturing method thereof 有权

    公开(公告)号：US10797146B2

    公开(公告)日：2020-10-06

    申请号：US16293560

    申请日：2019-03-05

    Applicant: Samsung Display Co., Ltd.

    Inventor： Seokhwan Bang ,  Soojung Chae ,  Kapsoo Yoon ,  Woogeun Lee ,  Sunghoon Lim

    IPC: H01L27/12 ,  H01L29/423 ,  H01L29/786 ,  H01L29/66 ,  H01L29/51

    Abstract: A thin film transistor substrate includes: a substrate; an oxide semiconductor layer disposed on the substrate; a gate electrode disposed on the substrate; a gate insulating layer interposed between the oxide semiconductor layer and the gate electrode; and a source electrode and a drain electrode connected to the oxide semiconductor layer, the source electrode and the drain electrode being spaced apart from each other. The gate insulating layer includes: a first gate insulating layer having an oxygen content lower than that of a stoichiometric composition; and a second gate insulating layer including a material substantially the same as a material which the first gate insulating layer may include, and having an oxygen content higher than that of the first gate insulating layer, and the first gate insulating layer and the oxide semiconductor layer directly contact each other.

Patent Agency Ranking