公开(公告)号：US20210359065A1

公开(公告)日：2021-11-18

申请号：US17123850

申请日：2020-12-16

Applicant: Samsung Display Co., Ltd.

Inventor： Youngjae JEON ,  Hyunseong KANG ,  Jongin KIM ,  Seokhwan BANG ,  Seungsok SON ,  Junewhan CHOI

IPC: H01L27/32 ,  H01L51/56

Abstract: A display apparatus includes a thin-film transistor located in a display area and including a semiconductor layer and a gate electrode; a storage capacitor located in the display area and including a first capacitor plate, a second capacitor plate, and a dummy capacitor plate overlapping each other; a light-emitting diode electrically connected to the thin-film transistor and the storage capacitor and including a pixel electrode, an interlayer, and a counter electrode; a pad located in a surrounding area adjacent to the display area; a lower electrode pattern layer disposed below the semiconductor layer, at least a portion of the lower electrode pattern layer overlapping the semiconductor layer; and a bridge electrode electrically connecting the semiconductor layer to the lower electrode pattern layer.

公开(公告)号：US20200350383A1

公开(公告)日：2020-11-05

申请号：US16841189

申请日：2020-04-06

Applicant: Samsung Display Co., LTD.

Inventor： Seokhwan BANG ,  Jong-In KIM ,  Kangnam KIM ,  WooGeun LEE ,  Sung-Hoon LIM ,  Soojung CHAE

IPC: H01L27/32 ,  H01L51/56

Abstract: An organic light emitting diode display device includes a substrate, an active layer disposed on the substrate and including a metal oxide-based semiconductor, a gate electrode disposed on the active layer, an insulating layer disposed on the gate electrode, source and drain electrodes disposed on the insulating layer, a light emitting element on the source and drain electrodes, and a gate insulating layer between the active layer and the gate electrode. The gate insulating layer includes first and second gate insulating layers. The first gate insulating layer directly contacts the active layer and has a first amount of nitrogen. The second gate insulating layer is disposed on the first gate insulating layer and has a second amount of nitrogen that is different from the first amount of nitrogen.

公开(公告)号：US20190341463A1

公开(公告)日：2019-11-07

申请号：US16293560

申请日：2019-03-05

Applicant: Samsung Display Co., Ltd.

Inventor： Seokhwan BANG ,  Soojung CHAE ,  Kapsoo YOON ,  Woogeun LEE ,  Sunghoon LIM

IPC: H01L29/423 ,  H01L29/51 ,  H01L29/66 ,  H01L29/786

Abstract: A thin film transistor substrate includes: a substrate; an oxide semiconductor layer disposed on the substrate; a gate electrode disposed on the substrate; a gate insulating layer interposed between the oxide semiconductor layer and the gate electrode; and a source electrode and a drain electrode connected to the oxide semiconductor layer, the source electrode and the drain electrode being spaced apart from each other. The gate insulating layer includes: a first gate insulating layer having an oxygen content lower than that of a stoichiometric composition; and a second gate insulating layer including a material substantially the same as a material which the first gate insulating layer may include, and having an oxygen content higher than that of the first gate insulating layer, and the first gate insulating layer and the oxide semiconductor layer directly contact each other.