公开(公告)号：US20130228772A1

公开(公告)日：2013-09-05

申请号：US13710889

申请日：2012-12-11

Applicant: SAMSUNG DISPLAY CO., LTD

Inventor： Youngjoo CHOI ,  Gwang-Bum KO ,  GwonHeon RYU ,  Joongeol KIM ,  Do-Hyun KIM ,  Sang-Moon MOH ,  WooGeun LEE ,  WONHEE LEE

IPC: H01L29/786 ,  H01L29/66

CPC classification number: H01L29/78693 ,  G02F1/134363 ,  H01L27/1225 ,  H01L27/124 ,  H01L27/1259 ,  H01L27/1288 ,  H01L29/66969

Abstract: A thin film transistor substrate includes a substrate; a gate electrode on the substrate; a semiconductor pattern on the gate electrode; a source electrode on the semiconductor pattern; a drain electrode on the semiconductor pattern and spaced apart from the source electrode; a pixel electrode connected to the drain electrode; and a common electrode partially overlapped with the pixel electrode. The semiconductor pattern is in a same layer of the thin film transistor substrate as the pixel electrode and has an electrical property different from an electrical property of the pixel electrode.

Abstract translation: 薄膜晶体管基板包括基板; 基板上的栅电极; 栅电极上的半导体图案; 半导体图案上的源电极; 半导体图案上的漏电极，与源电极间隔开; 连接到所述漏电极的像素电极; 以及与像素电极部分重叠的公共电极。 半导体图案与像素电极在薄膜晶体管基板的同一层中，具有与像素电极的电特性不同的电特性。

公开(公告)号：US20200350383A1

公开(公告)日：2020-11-05

申请号：US16841189

申请日：2020-04-06

Applicant: Samsung Display Co., LTD.

Inventor： Seokhwan BANG ,  Jong-In KIM ,  Kangnam KIM ,  WooGeun LEE ,  Sung-Hoon LIM ,  Soojung CHAE

IPC: H01L27/32 ,  H01L51/56

Abstract: An organic light emitting diode display device includes a substrate, an active layer disposed on the substrate and including a metal oxide-based semiconductor, a gate electrode disposed on the active layer, an insulating layer disposed on the gate electrode, source and drain electrodes disposed on the insulating layer, a light emitting element on the source and drain electrodes, and a gate insulating layer between the active layer and the gate electrode. The gate insulating layer includes first and second gate insulating layers. The first gate insulating layer directly contacts the active layer and has a first amount of nitrogen. The second gate insulating layer is disposed on the first gate insulating layer and has a second amount of nitrogen that is different from the first amount of nitrogen.