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公开(公告)号：US20220139970A1
公开(公告)日：2022-05-05
申请号：US17358640
申请日：2021-06-25
发明人： Joongeol Kim , Seulki Kim , Youngjae Jeon , Hyunseong Kang , Seungrae Kim , Jongin KIM , Seokhwan Bang , Seungsok Son , Donghoon Shin , Kapsoo Yoon , Kwangsoo Lee , Woogeun Lee , Jaehyun Lee , Kisu Jin , Junewhan Choi , Jongmoo Huh , Jiyun Hong
摘要： A display apparatus includes a substrate including a display area and a peripheral area adjacent to the display area, a thin-film transistor located in the display area of the substrate and including a semiconductor layer and a gate electrode overlapping a channel region of the semiconductor layer, a conductive layer disposed between the substrate and the semiconductor layer and including a first electrode located in the display area of the substrate and a pad electrode located in the peripheral area of the substrate, and a first insulating layer disposed between the conductive layer and the semiconductor layer and having a first opening that exposes at least a portion of an upper surface of the pad electrode.
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公开(公告)号：US11948510B2
公开(公告)日：2024-04-02
申请号：US18064813
申请日：2022-12-12
发明人： Soojung Chae , Seokhwan Bang , Seokje Seong , Jinseok Oh , Woobin Lee , June Whan Choi
IPC分类号： G09G3/32 , G09G3/3233
CPC分类号： G09G3/3233 , G09G2300/0426 , G09G2300/0809
摘要： A pixel circuit includes a first driving transistor including a gate electrode connected to a first node, a first electrode to receive a first power voltage, and a second electrode connected to a second node, a second driving transistor including a gate electrode and a second electrode connected to the second node, a first electrode to receive the first power voltage, and a back gate electrode connected to the first node, a write transistor including a first electrode to receive a data voltage and a second electrode connected to the first node, an initialization transistor including a gate electrode to receive an initialization gate signal, a first electrode to receive an initialization voltage, and a second electrode connected to the second node, a storage capacitor connected to the first and second nodes, and a light emitting element connected to the second node and configured to receive a second power voltage.
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公开(公告)号：US12108638B2
公开(公告)日：2024-10-01
申请号：US17402696
申请日：2021-08-16
发明人： Jongin Kim , Hyunseong Kang , Joongeol Kim , Seokhwan Bang , Seungsok Son , Woogeun Lee , Youngjae Jeon , Soojung Chae , Jiyun Hong
IPC分类号： H10K59/131 , G09G3/3233 , H01L27/12 , H01L29/24 , H01L29/786 , H10K59/121
CPC分类号： H10K59/131 , H10K59/1213 , H10K59/1216 , G09G3/3233 , G09G2300/0809 , H01L27/1225 , H01L27/124 , H01L27/1255 , H01L29/24 , H01L29/7869
摘要： A display apparatus includes a substrate including a display area and a peripheral area outside the display area, a thin film transistor arranged on the substrate corresponding to the display area and including a semiconductor layer and a gate electrode, a pad electrode arranged on the substrate corresponding to the peripheral area and including a material the same as that of the semiconductor layer, and a first insulating layer arranged on the thin film transistor and the pad electrode and including an opening that partially exposes the pad electrode. Accordingly, failure to perform a normal operation by a pixel circuit and a light-emitting element may be prevented.
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公开(公告)号：US12002821B2
公开(公告)日：2024-06-04
申请号：US17358640
申请日：2021-06-25
发明人： Joongeol Kim , Seulki Kim , Youngjae Jeon , Hyunseong Kang , Seungrae Kim , Jongin Kim , Seokhwan Bang , Seungsok Son , Donghoon Shin , Kapsoo Yoon , Kwangsoo Lee , Woogeun Lee , Jaehyun Lee , Kisu Jin , Junewhan Choi , Jongmoo Huh , Jiyun Hong
IPC分类号： H01L27/12 , H01L25/16 , H10K59/124 , H10K59/131 , H10K71/00 , H10K59/12
CPC分类号： H01L27/1288 , H01L25/167 , H01L27/124 , H01L27/1248 , H10K59/124 , H10K59/131 , H10K71/00 , H10K59/1201
摘要： A display apparatus includes a substrate including a display area and a peripheral area adjacent to the display area, a thin-film transistor located in the display area of the substrate and including a semiconductor layer and a gate electrode overlapping a channel region of the semiconductor layer, a conductive layer disposed between the substrate and the semiconductor layer and including a first electrode located in the display area of the substrate and a pad electrode located in the peripheral area of the substrate, and a first insulating layer disposed between the conductive layer and the semiconductor layer and having a first opening that exposes at least a portion of an upper surface of the pad electrode.
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公开(公告)号：US11825706B2
公开(公告)日：2023-11-21
申请号：US17123850
申请日：2020-12-16
发明人： Youngjae Jeon , Hyunseong Kang , Jongin Kim , Seokhwan Bang , Seungsok Son , Junewhan Choi
IPC分类号： H10K59/126 , H10K59/123 , H10K59/131 , H10K71/00 , H10K59/12
CPC分类号： H10K59/126 , H10K59/123 , H10K59/131 , H10K71/00 , H10K59/1201
摘要： A display apparatus includes a thin-film transistor located in a display area and including a semiconductor layer and a gate electrode; a storage capacitor located in the display area and including a first capacitor plate, a second capacitor plate, and a dummy capacitor plate overlapping each other; a light-emitting diode electrically connected to the thin-film transistor and the storage capacitor and including a pixel electrode, an interlayer, and a counter electrode; a pad located in a surrounding area adjacent to the display area; a lower electrode pattern layer disposed below the semiconductor layer, at least a portion of the lower electrode pattern layer overlapping the semiconductor layer; and a bridge electrode electrically connecting the semiconductor layer to the lower electrode pattern layer.
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公开(公告)号：US11367766B2
公开(公告)日：2022-06-21
申请号：US16841189
申请日：2020-04-06
发明人： Seokhwan Bang , Jong-In Kim , Kangnam Kim , Woogeun Lee , Sung-Hoon Lim , Soojung Chae
摘要： An organic light emitting diode display device includes a substrate, an active layer disposed on the substrate and including a metal oxide-based semiconductor, a gate electrode disposed on the active layer, an insulating layer disposed on the gate electrode, source and drain electrodes disposed on the insulating layer, a light emitting element on the source and drain electrodes, and a gate insulating layer between the active layer and the gate electrode. The gate insulating layer includes first and second gate insulating layers. The first gate insulating layer directly contacts the active layer and has a first amount of nitrogen. The second gate insulating layer is disposed on the first gate insulating layer and has a second amount of nitrogen that is different from the first amount of nitrogen.
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公开(公告)号：US20220173198A1
公开(公告)日：2022-06-02
申请号：US17402696
申请日：2021-08-16
发明人： Jongin Kim , Hyunseong Kang , Joongeol Kim , Seokhwan Bang , Seungsok Son , Woogeun Lee , Youngjae Jeon , Soojung Chae , Jiyun Hong
IPC分类号： H01L27/32
摘要： A display apparatus includes a substrate including a display area and a peripheral area outside the display area, a thin film transistor arranged on the substrate corresponding to the display area and including a semiconductor layer and a gate electrode, a pad electrode arranged on the substrate corresponding to the peripheral area and including a material the same as that of the semiconductor layer, and a first insulating layer arranged on the thin film transistor and the pad electrode and including an opening that partially exposes the pad electrode. Accordingly, failure to perform a normal operation by a pixel circuit and a light-emitting element may be prevented.
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公开(公告)号：US10797146B2
公开(公告)日：2020-10-06
申请号：US16293560
申请日：2019-03-05
发明人： Seokhwan Bang , Soojung Chae , Kapsoo Yoon , Woogeun Lee , Sunghoon Lim
IPC分类号： H01L27/12 , H01L29/423 , H01L29/786 , H01L29/66 , H01L29/51
摘要： A thin film transistor substrate includes: a substrate; an oxide semiconductor layer disposed on the substrate; a gate electrode disposed on the substrate; a gate insulating layer interposed between the oxide semiconductor layer and the gate electrode; and a source electrode and a drain electrode connected to the oxide semiconductor layer, the source electrode and the drain electrode being spaced apart from each other. The gate insulating layer includes: a first gate insulating layer having an oxygen content lower than that of a stoichiometric composition; and a second gate insulating layer including a material substantially the same as a material which the first gate insulating layer may include, and having an oxygen content higher than that of the first gate insulating layer, and the first gate insulating layer and the oxide semiconductor layer directly contact each other.
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