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    Gate driving circuit and display device including the same
    1.
    发明授权
    Gate driving circuit and display device including the same 有权

    公开(公告)号：US11710442B2

    公开(公告)日：2023-07-25

    申请号：US17481591

    申请日：2021-09-22

    Applicant: Samsung Display Co., Ltd.

    Inventor： Junhong Na ,  Kangnam Kim ,  Sung-Hoon Lim ,  Woogeun Lee ,  Kyu-Sik Cho

    IPC: G09G3/20

    CPC classification number: G09G3/2092 ,  G09G2310/0275

    Abstract: A gate driving circuit includes a plurality of unit stages connected to each other, wherein each of the plurality of unit stages includes a first transistor having a lower gate electrode, an upper gate electrode disposed on the lower gate electrode, an active layer disposed between the lower gate electrode and the upper gate electrode, a first electrode contacting a first portion of the active layer, and a second electrode contacting a second portion of the active layer, a first capacitor defined by a first region in which the lower gate electrode and the upper gate electrode overlap, and a second capacitor defined by a second region in which the upper gate electrode and the first electrode overlap, wherein the upper gate electrode and the lower gate electrode are electrically coupled to each other in the first region where the upper gate electrode and the lower gate electrode overlap to form the first capacitor.

    DISPLAY APPARATUS AND METHOD OF PROVIDING DISPLAY APPARATUS
    3.
    发明申请
    DISPLAY APPARATUS AND METHOD OF PROVIDING DISPLAY APPARATUS 有权

    公开(公告)号：US20230131708A1

    公开(公告)日：2023-04-27

    申请号：US17835415

    申请日：2022-06-08

    Applicant: Samsung Display Co., Ltd.

    Inventor： Jongbum Choi ,  Seulki Kim ,  Kapsoo Yoon ,  Woogeun Lee ,  Jaehyun Lee ,  Seungha Choi

    IPC: H01L27/32 ,  H01L51/56

    Abstract: A display apparatus includes a substrate, a semiconductor layer on the substrate, the semiconductor layer including an oxide semiconductor, a channel region and a first region which extends from the channel region to a first edge of the semiconductor layer and has a lower resistance than that of the channel region, a first inorganic insulating layer covering the semiconductor layer and including a first contact hole which overlaps the first region, a first electrode on the first inorganic insulating layer, overlapping the first region and electrically connected to the first region through the first contact hole, a gate electrode on the first inorganic insulating layer and overlapping the channel region, a second inorganic insulating layer covering the first electrode and the gate electrode, and a display element on the second inorganic insulating layer.

    DISPLAY APPARATUS
    7.
    发明公开
    DISPLAY APPARATUS 审中-公开

    公开(公告)号：US20240170470A1

    公开(公告)日：2024-05-23

    申请号：US18513697

    申请日：2023-11-20

    Applicant: Samsung Display Co., Ltd.

    Inventor： Donghan Kang ,  Jeehoon Kim ,  Sunggwon Moon ,  Seungsok Son ,  Shinhyuk Yang ,  Woogeun Lee

    IPC: H01L25/16 ,  H01L25/075 ,  H01L33/62

    CPC classification number: H01L25/167 ,  H01L25/0753 ,  H01L33/62

    Abstract: A display apparatus includes a transistor, a light-emitting diode including a first electrode electrically connected to the transistor, a second electrode, and an intermediate layer between the first and second electrodes, a bus line adjacent to the light-emitting diode, a first insulating layer on the bus line, a second insulating layer on the first insulating layer, a conductive layer electrically connected to the bus line through a first opening in the first insulating layer and a second opening in the second insulating layer, a third insulating layer on the second insulating layer and including a third opening overlapping the first opening and the second opening, and a fourth insulating layer on the third insulating layer and including a fourth opening overlapping the conductive layer, wherein a portion of the second electrode of the light-emitting diode is in contact with the conductive layer through the third opening and the fourth opening.

    DISPLAY APPARATUS AND METHOD OF MANUFACTURING THE SAME
    8.
    发明申请
    DISPLAY APPARATUS AND METHOD OF MANUFACTURING THE SAME 有权

    公开(公告)号：US20230137236A1

    公开(公告)日：2023-05-04

    申请号：US17968609

    申请日：2022-10-18

    Applicant: Samsung Display Co., Ltd.

    Inventor： Jaehyun Lee ,  Seulki Kim ,  Seungha Choi ,  Kapsoo Yoon ,  Woogeun Lee

    IPC: H01L27/32 ,  G09G3/3233 ,  H01L51/56

    Abstract: A display apparatus includes: a substrate; a semiconductor layer on the substrate, formed of an oxide semiconductor, and including a channel semiconductor layer and a first semiconductor layer extending in a first direction from the channel semiconductor layer; a first metal layer on the first semiconductor layer, and located in the first semiconductor layer in a plan view; a first inorganic insulating layer covering the semiconductor layer and the first metal layer and including a first contact hole overlapping the first semiconductor layer and the first metal layer; a first electrode on the first inorganic insulating layer, overlapping the first semiconductor layer and the first metal layer, and electrically connected to the first metal layer and the first semiconductor layer connected to the first metal layer through the first contact hole.

    DISPLAY DEVICE AND METHOD OF REPARING THE SAME
    9.
    发明申请
    DISPLAY DEVICE AND METHOD OF REPARING THE SAME 有权

    公开(公告)号：US20220344625A1

    公开(公告)日：2022-10-27

    申请号：US17559983

    申请日：2021-12-22

    Applicant: Samsung Display Co., Ltd.

    Inventor： Youngjae Jeon ,  Woogeun Lee

    IPC: H01L51/56 ,  H01L27/32

    Abstract: Provided are a display device in which a bright spot occurring due to a defective pixel circuit may be repaired into a dark spot, and a method of repairing the display device. The display device includes a substrate, a thin-film transistor arranged on the substrate and including a semiconductor layer and a gate electrode overlapping at least a portion of the semiconductor layer, a pixel electrode on the substrate, a node connection line connecting the thin-film transistor and the pixel electrode to each other, and an initialization voltage line arranged on the substrate and extending in a first direction, wherein the node connection line includes a repair portion overlapping the initialization voltage line in a plan view.

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