DISPLAY SUBSTRATE HAVING A THIN FILM TRANSISTOR AND METHOD OF MANUFACTURING THE SAME
    4.
    发明申请
    DISPLAY SUBSTRATE HAVING A THIN FILM TRANSISTOR AND METHOD OF MANUFACTURING THE SAME 有权
    具有薄膜晶体管的显示基板及其制造方法

    公开(公告)号:US20150008426A1

    公开(公告)日:2015-01-08

    申请号:US14148386

    申请日:2014-01-06

    Abstract: In a method for manufacturing a display substrate, a thin film transistor is formed on a base substrate. The thin film transistor includes a gate electrode, an active pattern, a source electrode and a drain electrode. A first passivation layer is formed to cover the thin film transistor. A second passivation layer is formed on the first passivation layer. A photoresist pattern is formed to partially expose the second passivation layer. The first passivation layer and the second passivation layer are partially removed to form a contact hole exposing the drain electrode. A pixel electrode layer is formed on the second passivation layer, the drain electrode and the photoresist pattern. A portion of the pixel electrode layer and the second photoresist pattern are removed to form a pixel electrode. The portion of the pixel electrode layer is disposed on a top surface and a sidewall of the photoresist pattern.

    Abstract translation: 在显示基板的制造方法中,在基底基板上形成薄膜晶体管。 薄膜晶体管包括栅电极,有源图案,源电极和漏电极。 形成第一钝化层以覆盖薄膜晶体管。 在第一钝化层上形成第二钝化层。 形成光致抗蚀剂图案以部分地暴露第二钝化层。 部分去除第一钝化层和第二钝化层以形成暴露漏电极的接触孔。 在第二钝化层,漏电极和光致抗蚀剂图案上形成像素电极层。 去除像素电极层和第二光致抗蚀剂图案的一部分以形成像素电极。 像素电极层的部分设置在光致抗蚀剂图案的顶表面和侧壁上。

    DISPLAY DEVICE AND METHOD OF MANUFACTURING THE SAME
    5.
    发明申请
    DISPLAY DEVICE AND METHOD OF MANUFACTURING THE SAME 审中-公开
    显示装置及其制造方法

    公开(公告)号:US20150255493A1

    公开(公告)日:2015-09-10

    申请号:US14604480

    申请日:2015-01-23

    Abstract: A display device includes a substrate comprising a display area and a non-display area. A gate line and a data line are disposed on the substrate. A thin film transistor is disposed on the display area and coupled to the gate line and the data line. A pad is disposed in the non-display area. A passivation layer is disposed on the thin film transistor and the pad. A pixel electrode is coupled to the thin film transistor. The passivation layer has a thickness that is smaller in the non-display area than in the display area, and the passivation layer has a thickness of about 0.1 μm to about 1 μm in the non-display area.

    Abstract translation: 显示装置包括包括显示区域和非显示区域的基板。 栅极线和数据线设置在基板上。 薄膜晶体管设置在显示区域上并耦合到栅极线和数据线。 在非显示区域中设置垫。 钝化层设置在薄膜晶体管和衬垫上。 像素电极耦合到薄膜晶体管。 钝化层的非显示区域的厚度比在显示区域中的厚度小,在非显示区域中钝化层的厚度为约0.1μm至约1μm。

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