Abstract:
A plastic material substrate has a die mounting location for a semiconductor die. Metallic traces are formed on selected areas of the plastic material substrate, wherein the metallic traces provide electrically-conductive paths for coupling to the semiconductor die. The semiconductor die is attached onto the die mounting location. The semiconductor die attached onto the die mounting location is electrically bonded to selected ones of the metallic traces formed on the plastic material substrate. A package material is molded onto the semiconductor die attached onto the die mounting location.
Abstract:
A semiconductor device includes: one or more semiconductor dice, a die pad supporting the semiconductor die or dice, a package molded onto the semiconductor die or dice supported by said die pad, wherein the die pad is exposed at the surface of the package, and the exposed die pad with an etched pattern therein to form at least one electrical contact land in the die pad.
Abstract:
A method for use in manufacturing semiconductor devices such as, e.g., semiconductor power devices includes providing: a semiconductor die provided with bonding pads, a lead frame for the semiconductor die, a wire bonding layout including electrically conductive wires coupling bonding pads of the semiconductor die with leads in the lead frame. One or more bonding pads of the semiconductor die is/are coupled to a respective lead in the lead frame via a plurality of wires with a plurality of mutually insulated testing lands in the respective lead, so that the plurality of wires are coupled to respective testing lands. The electrical connection between such a bonding pad and the respective lead may be tested by testing the individual electrical connections between the bonding pad and the plurality of testing lands.
Abstract:
A semiconductor device, such as a semiconductor power device, includes: a semiconductor die having a semiconductor die front surface, a package formed onto the semiconductor die, the package having a portion facing the front surface of the semiconductor die, and a thermally-conductive layer including graphene over the front portion of the package facing the front surface of the semiconductor die.
Abstract:
A method for use in manufacturing semiconductor devices such as, e.g., semiconductor power devices includes providing: a semiconductor die provided with bonding pads, a lead frame for the semiconductor die, a wire bonding layout including electrically conductive wires coupling bonding pads of the semiconductor die with leads in the lead frame. One or more bonding pads of the semiconductor die is/are coupled to a respective lead in the lead frame via a plurality of wires with a plurality of mutually insulated testing lands in the respective lead, so that the plurality of wires are coupled to respective testing lands. The electrical connection between such a bonding pad and the respective lead may be tested by testing the individual electrical connections between the bonding pad and the plurality of testing lands.
Abstract:
An IC may include a semiconductor substrate having circuitry formed in the substrate, an interconnect layer above the semiconductor substrate and having an antenna coupled to the circuitry, and a seal ring around a periphery of the interconnect layer. The IC may include an electrically insulating trench extending vertically into the semiconductor substrate and extending laterally across the semiconductor substrate from adjacent one side to adjacent another side.
Abstract:
A substrate-level assembly having a device substrate of semiconductor material with a top face and housing a first integrated device, including a buried cavity formed within the device substrate, and with a membrane suspended over the buried cavity in the proximity of the top face. A capping substrate is coupled to the device substrate above the top face so as to cover the first integrated device in such a manner that a first empty space is provided above the membrane. Electrical-contact elements electrically connect the integrated device with the outside of the substrate-level assembly. In one embodiment, the device substrate integrates at least a further integrated device provided with a respective membrane, and a further empty space, fluidly isolated from the first empty space, is provided over the respective membrane of the further integrated device.
Abstract:
An electronic component includes one or more circuits having electrical connections coupled therewith. The electrical connections include a lead frame as well as electrical wires coupling the circuit or circuits to respective portions of the lead frame. The electrical wires may be formed as one piece with the respective portion of the lead frame without joints therebetween, e.g., by 3D printing.
Abstract:
An assembly of a MEMS integrated device envisages: a package having a base substrate with a main surface in a horizontal plane, and a coating set on the base substrate; a first body including semiconductor material and integrating a micromechanical structure, housed within the package on the base substrate; at least one second body including semiconductor material and integrating at least one electronic component, designed to be functionally coupled to the micromechanical structure, the first body and the second body being arranged within the package stacked in a vertical direction transverse to the horizontal plane. In particular, at least one between the first body and the base substrate defines a first recess, in which the second body is housed, at least in part.
Abstract:
A method of manufacturing semiconductor devices, such as integrated circuits includes arranging one or more semiconductor dice on a support surface. Laser direct structuring material is molded onto the support surface having the semiconductor die/dice arranged thereon. Laser beam processing is performed on the laser direct structuring material molded onto the support surface having the semiconductor die/dice arranged thereon to provide electrically conductive formations for the semiconductor die/dice arranged on the support surface. The semiconductor die/dice provided with the electrically-conductive formations are separated from the support surface.