公开(公告)号：US20160218089A1

公开(公告)日：2016-07-28

申请号：US15088349

申请日：2016-04-01

Applicant: STATS ChipPAC, Ltd.

Inventor： KyungHoon Lee ,  HyunJin Song ,  KyoungIl Huh ,  DaeSik Choi

IPC: H01L25/065 ,  H01L23/31

CPC classification number: H01L25/0657 ,  H01L21/568 ,  H01L23/3114 ,  H01L23/5385 ,  H01L23/5389 ,  H01L24/19 ,  H01L24/96 ,  H01L24/97 ,  H01L2224/0401 ,  H01L2224/04105 ,  H01L2224/0557 ,  H01L2224/12105 ,  H01L2224/13025 ,  H01L2224/16145 ,  H01L2224/16225 ,  H01L2224/2518 ,  H01L2224/32245 ,  H01L2224/48091 ,  H01L2224/73209 ,  H01L2224/73259 ,  H01L2224/73265 ,  H01L2224/73267 ,  H01L2224/81192 ,  H01L2224/92124 ,  H01L2224/94 ,  H01L2224/96 ,  H01L2225/06517 ,  H01L2225/06548 ,  H01L2225/06586 ,  H01L2924/13091 ,  H01L2924/181 ,  H01L2924/18161 ,  H01L2924/18162 ,  H01L2924/19104 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2224/81 ,  H01L2224/03 ,  H01L2924/00012

Abstract: A semiconductor device includes a semiconductor die. An encapsulant is deposited over the semiconductor die. An insulating layer is formed over the encapsulant and a first surface of the semiconductor die. A semiconductor component is disposed over the insulating layer and first surface of the semiconductor die. A first interconnect structure is formed over the encapsulant and first surface of the semiconductor die to embed the semiconductor component. A conductive via is formed in the semiconductor die. A heat sink is formed over the semiconductor die. A second interconnect structure is formed over a second surface of the semiconductor die opposite the first surface. A conductive layer is formed over the semiconductor component. An opening is formed in the insulating layer.

Abstract translation: 半导体器件包括半导体管芯。 密封剂沉积在半导体管芯上。 在密封剂和半导体管芯的第一表面之上形成绝缘层。 半导体元件设置在半导体管芯的绝缘层和第一表面之上。 第一互连结构形成在半导体管芯的密封剂和第一表面上以嵌入半导体部件。 在半导体管芯中形成导电通孔。 在半导体管芯上形成散热器。 第二互连结构形成在与第一表面相对的半导体管芯的第二表面上。 在半导体部件上形成导电层。 在绝缘层中形成开口。

公开(公告)号：US20140264905A1

公开(公告)日：2014-09-18

申请号：US13801294

申请日：2013-03-13

Applicant: STATS CHIPPAC, LTD.

Inventor： KyungHoon Lee ,  HyunJin Song ,  KyoungIl Huh ,  DaeSik Choi

IPC: H01L23/48 ,  H01L21/48

CPC classification number: H01L25/0657 ,  H01L21/568 ,  H01L23/3114 ,  H01L23/5385 ,  H01L23/5389 ,  H01L24/19 ,  H01L24/96 ,  H01L24/97 ,  H01L2224/0401 ,  H01L2224/04105 ,  H01L2224/0557 ,  H01L2224/12105 ,  H01L2224/13025 ,  H01L2224/16145 ,  H01L2224/16225 ,  H01L2224/2518 ,  H01L2224/32245 ,  H01L2224/48091 ,  H01L2224/73209 ,  H01L2224/73259 ,  H01L2224/73265 ,  H01L2224/73267 ,  H01L2224/81192 ,  H01L2224/92124 ,  H01L2224/94 ,  H01L2224/96 ,  H01L2225/06517 ,  H01L2225/06548 ,  H01L2225/06586 ,  H01L2924/13091 ,  H01L2924/181 ,  H01L2924/18161 ,  H01L2924/18162 ,  H01L2924/19104 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2224/81 ,  H01L2224/03 ,  H01L2924/00012

Abstract: A semiconductor device includes a semiconductor die. An encapsulant is deposited over the semiconductor die. An insulating layer is formed over the encapsulant and a first surface of the semiconductor die. A semiconductor component is disposed over the insulating layer and first surface of the semiconductor die. A first interconnect structure is formed over the encapsulant and first surface of the semiconductor die to embed the semiconductor component. A conductive via is formed in the semiconductor die. A heat sink is formed over the semiconductor die. A second interconnect structure is formed over a second surface of the semiconductor die opposite the first surface. A conductive layer is formed over the semiconductor component. An opening is formed in the insulating layer.

Abstract translation: 半导体器件包括半导体管芯。 密封剂沉积在半导体管芯上。 在密封剂和半导体管芯的第一表面之上形成绝缘层。 半导体元件设置在半导体管芯的绝缘层和第一表面之上。 第一互连结构形成在半导体管芯的密封剂和第一表面上以嵌入半导体部件。 在半导体管芯中形成导电通孔。 在半导体管芯上形成散热器。 第二互连结构形成在与第一表面相对的半导体管芯的第二表面上。 在半导体部件上形成导电层。 在绝缘层中形成开口。

公开(公告)号：US09799590B2

公开(公告)日：2017-10-24

申请号：US13801675

申请日：2013-03-13

Applicant: STATS ChipPAC, Ltd.

Inventor： KyungHoon Lee ,  SangMi Park ,  KyoungIl Huh ,  DaeSik Choi

IPC: H01L21/00 ,  H01L21/44 ,  H01L23/498 ,  H01L21/56 ,  H01L23/36 ,  H01L25/065 ,  H01L25/00 ,  H01L23/00 ,  H01L23/31

CPC classification number: H01L23/49816 ,  H01L21/561 ,  H01L23/3128 ,  H01L23/36 ,  H01L23/49822 ,  H01L24/96 ,  H01L24/97 ,  H01L25/0657 ,  H01L25/50 ,  H01L2224/04105 ,  H01L2224/11 ,  H01L2224/12105 ,  H01L2224/16145 ,  H01L2224/16146 ,  H01L2224/32145 ,  H01L2224/32245 ,  H01L2224/48091 ,  H01L2224/73209 ,  H01L2224/73253 ,  H01L2224/73265 ,  H01L2224/73267 ,  H01L2224/81005 ,  H01L2224/94 ,  H01L2225/06513 ,  H01L2225/06517 ,  H01L2225/06541 ,  H01L2225/06548 ,  H01L2225/06582 ,  H01L2225/06589 ,  H01L2924/13091 ,  H01L2924/181 ,  H01L2924/18161 ,  H01L2924/18162 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/81

Abstract: A semiconductor device includes a semiconductor wafer including a plurality of first semiconductor die. An opening is formed partially through the semiconductor wafer. A plurality of second semiconductor die is disposed over a first surface of the semiconductor wafer. An encapsulant is disposed over the semiconductor wafer and into the opening leaving a second surface of the semiconductor wafer exposed. A portion of the second surface of the semiconductor wafer is removed to separate the first semiconductor die. An interconnect structure is formed over the second semiconductor die and encapsulant. A thermal interface material is deposited over the second surface of the first semiconductor die. A heat spreader is disposed over the thermal interface material. An insulating layer is formed over the first surface of the semiconductor wafer. A vertical interconnect structure is formed around the first semiconductor die. Conductive vias are formed through the first semiconductor die.

公开(公告)号：US20140264817A1

公开(公告)日：2014-09-18

申请号：US13801675

申请日：2013-03-13

Applicant: STATS CHIPPAC, LTD.

Inventor： KyungHoon Lee ,  SangMi Park ,  KyoungIl Huh ,  DaeSik Choi

IPC: H01L23/34 ,  H01L21/56

CPC classification number: H01L23/49816 ,  H01L21/561 ,  H01L23/3128 ,  H01L23/36 ,  H01L23/49822 ,  H01L24/96 ,  H01L24/97 ,  H01L25/0657 ,  H01L25/50 ,  H01L2224/04105 ,  H01L2224/11 ,  H01L2224/12105 ,  H01L2224/16145 ,  H01L2224/16146 ,  H01L2224/32145 ,  H01L2224/32245 ,  H01L2224/48091 ,  H01L2224/73209 ,  H01L2224/73253 ,  H01L2224/73265 ,  H01L2224/73267 ,  H01L2224/81005 ,  H01L2224/94 ,  H01L2225/06513 ,  H01L2225/06517 ,  H01L2225/06541 ,  H01L2225/06548 ,  H01L2225/06582 ,  H01L2225/06589 ,  H01L2924/13091 ,  H01L2924/181 ,  H01L2924/18161 ,  H01L2924/18162 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/81

Abstract: A semiconductor device includes a semiconductor wafer including a plurality of first semiconductor die. An opening is formed partially through the semiconductor wafer. A plurality of second semiconductor die is disposed over a first surface of the semiconductor wafer. An encapsulant is disposed over the semiconductor wafer and into the opening leaving a second surface of the semiconductor wafer exposed. A portion of the second surface of the semiconductor wafer is removed to separate the first semiconductor die. An interconnect structure is formed over the second semiconductor die and encapsulant. A thermal interface material is deposited over the second surface of the first semiconductor die. A heat spreader is disposed over the thermal interface material. An insulating layer is formed over the first surface of the semiconductor wafer. A vertical interconnect structure is formed around the first semiconductor die. Conductive vias are formed through the first semiconductor die.

Abstract translation: 半导体器件包括包括多个第一半导体管芯的半导体晶片。 部分地通过半导体晶片形成开口。 多个第二半导体管芯设置在半导体晶片的第一表面上。 密封剂设置在半导体晶片上并进入开口，留下暴露的半导体晶片的第二表面。 去除半导体晶片的第二表面的一部分以分离第一半导体管芯。 在第二半导体管芯和密封剂上形成互连结构。 热界面材料沉积在第一半导体管芯的第二表面上。 散热器布置在热界面材料的上方。 在半导体晶片的第一表面上形成绝缘层。 在第一半导体管芯周围形成垂直互连结构。 导电孔通过第一半导体管芯形成。