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公开(公告)号：US10068877B2
公开(公告)日：2018-09-04
申请号：US15088349
申请日：2016-04-01
Applicant: STATS ChipPAC, Ltd.
Inventor： KyungHoon Lee , HyunJin Song , Kyoungll Huh , DaeSik Choi
IPC: H01L21/00 , H01L25/065 , H01L21/56 , H01L23/538 , H01L23/00 , H01L23/31
Abstract: A semiconductor device includes a semiconductor die. An encapsulant is deposited over the semiconductor die. An insulating layer is formed over the encapsulant and a first surface of the semiconductor die. A semiconductor component is disposed over the insulating layer and first surface of the semiconductor die. A first interconnect structure is formed over the encapsulant and first surface of the semiconductor die to embed the semiconductor component. A conductive via is formed in the semiconductor die. A heat sink is formed over the semiconductor die. A second interconnect structure is formed over a second surface of the semiconductor die opposite the first surface. A conductive layer is formed over the semiconductor component. An opening is formed in the insulating layer.
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2.发明申请Semiconductor Device and Method of Forming WLCSP with Semiconductor Die Embedded Within Interconnect Structure 审中-公开半导体器件及其在嵌入式互连结构中的半导体晶片形成WLCSP的方法公开(公告)号：US20160218089A1
公开(公告)日：2016-07-28
申请号：US15088349
申请日：2016-04-01
Applicant: STATS ChipPAC, Ltd.
Inventor： KyungHoon Lee , HyunJin Song , KyoungIl Huh , DaeSik Choi
IPC: H01L25/065 , H01L23/31
CPC classification number: H01L25/0657 , H01L21/568 , H01L23/3114 , H01L23/5385 , H01L23/5389 , H01L24/19 , H01L24/96 , H01L24/97 , H01L2224/0401 , H01L2224/04105 , H01L2224/0557 , H01L2224/12105 , H01L2224/13025 , H01L2224/16145 , H01L2224/16225 , H01L2224/2518 , H01L2224/32245 , H01L2224/48091 , H01L2224/73209 , H01L2224/73259 , H01L2224/73265 , H01L2224/73267 , H01L2224/81192 , H01L2224/92124 , H01L2224/94 , H01L2224/96 , H01L2225/06517 , H01L2225/06548 , H01L2225/06586 , H01L2924/13091 , H01L2924/181 , H01L2924/18161 , H01L2924/18162 , H01L2924/19104 , H01L2924/00014 , H01L2924/00 , H01L2224/81 , H01L2224/03 , H01L2924/00012
Abstract: A semiconductor device includes a semiconductor die. An encapsulant is deposited over the semiconductor die. An insulating layer is formed over the encapsulant and a first surface of the semiconductor die. A semiconductor component is disposed over the insulating layer and first surface of the semiconductor die. A first interconnect structure is formed over the encapsulant and first surface of the semiconductor die to embed the semiconductor component. A conductive via is formed in the semiconductor die. A heat sink is formed over the semiconductor die. A second interconnect structure is formed over a second surface of the semiconductor die opposite the first surface. A conductive layer is formed over the semiconductor component. An opening is formed in the insulating layer.
Abstract translation: 半导体器件包括半导体管芯。 密封剂沉积在半导体管芯上。 在密封剂和半导体管芯的第一表面之上形成绝缘层。 半导体元件设置在半导体管芯的绝缘层和第一表面之上。 第一互连结构形成在半导体管芯的密封剂和第一表面上以嵌入半导体部件。 在半导体管芯中形成导电通孔。 在半导体管芯上形成散热器。 第二互连结构形成在与第一表面相对的半导体管芯的第二表面上。 在半导体部件上形成导电层。 在绝缘层中形成开口。
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3.发明授权Semiconductor device and method of forming WLCSP with semiconductor die embedded within interconnect structure 有权半导体器件和半导体管芯嵌入互连结构中的WLCSP的形成方法公开(公告)号：US09349616B2
公开(公告)日：2016-05-24
申请号：US13801294
申请日：2013-03-13
Applicant: STATS ChipPAC, Ltd.
Inventor： KyungHoon Lee , HyunJin Song , Kyoungll Huh , DaeSik Choi
IPC: H01L23/02 , H01L21/56 , H01L23/538 , H01L23/00
CPC classification number: H01L25/0657 , H01L21/568 , H01L23/3114 , H01L23/5385 , H01L23/5389 , H01L24/19 , H01L24/96 , H01L24/97 , H01L2224/0401 , H01L2224/04105 , H01L2224/0557 , H01L2224/12105 , H01L2224/13025 , H01L2224/16145 , H01L2224/16225 , H01L2224/2518 , H01L2224/32245 , H01L2224/48091 , H01L2224/73209 , H01L2224/73259 , H01L2224/73265 , H01L2224/73267 , H01L2224/81192 , H01L2224/92124 , H01L2224/94 , H01L2224/96 , H01L2225/06517 , H01L2225/06548 , H01L2225/06586 , H01L2924/13091 , H01L2924/181 , H01L2924/18161 , H01L2924/18162 , H01L2924/19104 , H01L2924/00014 , H01L2924/00 , H01L2224/81 , H01L2224/03 , H01L2924/00012
Abstract: A semiconductor device includes a semiconductor die. An encapsulant is deposited over the semiconductor die. An insulating layer is formed over the encapsulant and a first surface of the semiconductor die. A semiconductor component is disposed over the insulating layer and first surface of the semiconductor die. A first interconnect structure is formed over the encapsulant and first surface of the semiconductor die to embed the semiconductor component. A conductive via is formed in the semiconductor die. A heat sink is formed over the semiconductor die. A second interconnect structure is formed over a second surface of the semiconductor die opposite the first surface. A conductive layer is formed over the semiconductor component. An opening is formed in the insulating layer.
Abstract translation: 半导体器件包括半导体管芯。 密封剂沉积在半导体管芯上。 在密封剂和半导体管芯的第一表面之上形成绝缘层。 半导体元件设置在半导体管芯的绝缘层和第一表面之上。 第一互连结构形成在半导体管芯的密封剂和第一表面上以嵌入半导体部件。 在半导体管芯中形成导电通孔。 在半导体管芯上形成散热器。 第二互连结构形成在与第一表面相对的半导体管芯的第二表面上。 在半导体部件上形成导电层。 在绝缘层中形成开口。
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4.发明申请Semiconductor Device and Method of Forming WLCSP with Semiconductor Die Embedded within Interconnect Structure 有权半导体器件和嵌入在互连结构中的半导体晶片的WLCSP的形成方法公开(公告)号：US20140264905A1
公开(公告)日：2014-09-18
申请号：US13801294
申请日：2013-03-13
Applicant: STATS CHIPPAC, LTD.
Inventor： KyungHoon Lee , HyunJin Song , KyoungIl Huh , DaeSik Choi
CPC classification number: H01L25/0657 , H01L21/568 , H01L23/3114 , H01L23/5385 , H01L23/5389 , H01L24/19 , H01L24/96 , H01L24/97 , H01L2224/0401 , H01L2224/04105 , H01L2224/0557 , H01L2224/12105 , H01L2224/13025 , H01L2224/16145 , H01L2224/16225 , H01L2224/2518 , H01L2224/32245 , H01L2224/48091 , H01L2224/73209 , H01L2224/73259 , H01L2224/73265 , H01L2224/73267 , H01L2224/81192 , H01L2224/92124 , H01L2224/94 , H01L2224/96 , H01L2225/06517 , H01L2225/06548 , H01L2225/06586 , H01L2924/13091 , H01L2924/181 , H01L2924/18161 , H01L2924/18162 , H01L2924/19104 , H01L2924/00014 , H01L2924/00 , H01L2224/81 , H01L2224/03 , H01L2924/00012
Abstract: A semiconductor device includes a semiconductor die. An encapsulant is deposited over the semiconductor die. An insulating layer is formed over the encapsulant and a first surface of the semiconductor die. A semiconductor component is disposed over the insulating layer and first surface of the semiconductor die. A first interconnect structure is formed over the encapsulant and first surface of the semiconductor die to embed the semiconductor component. A conductive via is formed in the semiconductor die. A heat sink is formed over the semiconductor die. A second interconnect structure is formed over a second surface of the semiconductor die opposite the first surface. A conductive layer is formed over the semiconductor component. An opening is formed in the insulating layer.
Abstract translation: 半导体器件包括半导体管芯。 密封剂沉积在半导体管芯上。 在密封剂和半导体管芯的第一表面之上形成绝缘层。 半导体元件设置在半导体管芯的绝缘层和第一表面之上。 第一互连结构形成在半导体管芯的密封剂和第一表面上以嵌入半导体部件。 在半导体管芯中形成导电通孔。 在半导体管芯上形成散热器。 第二互连结构形成在与第一表面相对的半导体管芯的第二表面上。 在半导体部件上形成导电层。 在绝缘层中形成开口。
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