Invention Grant
US09349616B2 Semiconductor device and method of forming WLCSP with semiconductor die embedded within interconnect structure
有权
半导体器件和半导体管芯嵌入互连结构中的WLCSP的形成方法
- Patent Title: Semiconductor device and method of forming WLCSP with semiconductor die embedded within interconnect structure
- Patent Title (中): 半导体器件和半导体管芯嵌入互连结构中的WLCSP的形成方法
-
Application No.: US13801294Application Date: 2013-03-13
-
Publication No.: US09349616B2Publication Date: 2016-05-24
- Inventor: KyungHoon Lee , HyunJin Song , Kyoungll Huh , DaeSik Choi
- Applicant: STATS ChipPAC, Ltd.
- Applicant Address: SG Singapore
- Assignee: STATS ChipPAC, Ltd.
- Current Assignee: STATS ChipPAC, Ltd.
- Current Assignee Address: SG Singapore
- Agency: Patent Law Group: Atkins and Associates, P.C.
- Agent Robert D. Atkins
- Main IPC: H01L23/02
- IPC: H01L23/02 ; H01L21/56 ; H01L23/538 ; H01L23/00
Abstract:
A semiconductor device includes a semiconductor die. An encapsulant is deposited over the semiconductor die. An insulating layer is formed over the encapsulant and a first surface of the semiconductor die. A semiconductor component is disposed over the insulating layer and first surface of the semiconductor die. A first interconnect structure is formed over the encapsulant and first surface of the semiconductor die to embed the semiconductor component. A conductive via is formed in the semiconductor die. A heat sink is formed over the semiconductor die. A second interconnect structure is formed over a second surface of the semiconductor die opposite the first surface. A conductive layer is formed over the semiconductor component. An opening is formed in the insulating layer.
Public/Granted literature
Information query
IPC分类:
