Invention Application
US20140264905A1 Semiconductor Device and Method of Forming WLCSP with Semiconductor Die Embedded within Interconnect Structure
有权
半导体器件和嵌入在互连结构中的半导体晶片的WLCSP的形成方法
- Patent Title: Semiconductor Device and Method of Forming WLCSP with Semiconductor Die Embedded within Interconnect Structure
- Patent Title (中): 半导体器件和嵌入在互连结构中的半导体晶片的WLCSP的形成方法
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Application No.: US13801294Application Date: 2013-03-13
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Publication No.: US20140264905A1Publication Date: 2014-09-18
- Inventor: KyungHoon Lee , HyunJin Song , KyoungIl Huh , DaeSik Choi
- Applicant: STATS CHIPPAC, LTD.
- Applicant Address: SG Singapore
- Assignee: STATS ChipPAC, Ltd.
- Current Assignee: STATS ChipPAC, Ltd.
- Current Assignee Address: SG Singapore
- Main IPC: H01L23/48
- IPC: H01L23/48 ; H01L21/48
Abstract:
A semiconductor device includes a semiconductor die. An encapsulant is deposited over the semiconductor die. An insulating layer is formed over the encapsulant and a first surface of the semiconductor die. A semiconductor component is disposed over the insulating layer and first surface of the semiconductor die. A first interconnect structure is formed over the encapsulant and first surface of the semiconductor die to embed the semiconductor component. A conductive via is formed in the semiconductor die. A heat sink is formed over the semiconductor die. A second interconnect structure is formed over a second surface of the semiconductor die opposite the first surface. A conductive layer is formed over the semiconductor component. An opening is formed in the insulating layer.
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Information query
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