公开(公告)号：US20210265200A1

公开(公告)日：2021-08-26

申请号：US17194641

申请日：2021-03-08

Applicant: Sony Corporation

Inventor： Yoshihisa Kagawa ,  Kenichi Aoyagi ,  Yoshiya Hagimoto ,  Nobutoshi Fujii

IPC: H01L21/768 ,  H01L23/528 ,  H01L27/146 ,  H01L23/00 ,  H04N5/369 ,  H01L23/532

Abstract: Disclosed herein is a semiconductor device, including: a first substrate including a first electrode, and a first insulating film configured from a diffusion preventing material for the first electrode and covering a periphery of the first electrode, the first electrode and the first insulating film cooperating with each other to configure a bonding face; and a second substrate bonded to and provided on the first substrate and including a second electrode joined to the first electrode, and a second insulating film configured from a diffusion preventing material for the second electrode and covering a periphery of the second electrode, the second electrode and the second insulating film cooperating with each other to configure a bonding face to the first substrate.

公开(公告)号：US10944932B2

公开(公告)日：2021-03-09

申请号：US16438219

申请日：2019-06-11

Applicant: SONY CORPORATION

Inventor： Masaki Sakakibara ,  Kenichi Aoyagi ,  Seiji Yamada

IPC: H04N5/374 ,  H04N5/3745 ,  H01L27/146 ,  H03K5/24 ,  H04N5/378 ,  H04N5/369

Abstract: The present disclosure relates to a comparator, an AD converter, a solid-state imaging device, an electronic apparatus, and a comparator control method that can reduce power consumption while increasing the determination speed of the comparator.
The comparator includes a comparison unit, a positive feedback circuit, and a current limiting unit. The comparison unit compares the voltage of an input signal and the voltage of a reference signal, and outputs a comparison result signal. The positive feedback circuit increases the transition speed at the time when the comparison result signal is inverted. The current limiting unit limits the current flowing in the comparison unit after the inversion of the comparison result signal. The present disclosure can be applied to comparators, for example.

公开(公告)号：US10707258B2

公开(公告)日：2020-07-07

申请号：US15987278

申请日：2018-05-23

Applicant: Sony Corporation

Inventor： Nobutoshi Fujii ,  Yoshiya Hagimoto ,  Kenichi Aoyagi ,  Yoshihisa Kagawa

IPC: H01L27/146 ,  H01L21/20 ,  H01L21/768 ,  H01L23/00 ,  H04N5/225

Abstract: A semiconductor device includes a first substrate having an attaching surface on which first electrodes and a first insulating film are exposed, an insulating thin film that covers the attaching surface of the first substrate, and a second substrate which has an attaching surface on which second electrodes and a second insulating film are exposed and is attached to the first substrate in a state in which the attaching surface of the second substrate and the attaching surface of the first substrate are attached together sandwiching the insulating thin film therebetween, and the first electrodes and the second electrodes deform and break a part of the insulating thin film so as to be directly electrically connected to each other.

公开(公告)号：US10038024B2

公开(公告)日：2018-07-31

申请号：US15228860

申请日：2016-08-04

Applicant: Sony Corporation

Inventor： Yoshihisa Kagawa ,  Kenichi Aoyagi ,  Yoshiya Hagimoto ,  Nobutoshi Fujii

IPC: H01L23/48 ,  H01L23/52 ,  H01L29/40 ,  H01L27/146 ,  H01L21/768 ,  H01L23/00 ,  H04N5/369 ,  H01L23/528 ,  H01L23/532 ,  H01L27/06

CPC classification number: H01L27/14636 ,  H01L21/76807 ,  H01L21/7684 ,  H01L21/76841 ,  H01L21/76843 ,  H01L23/481 ,  H01L23/528 ,  H01L23/5283 ,  H01L23/53223 ,  H01L23/53238 ,  H01L23/53266 ,  H01L23/53295 ,  H01L23/564 ,  H01L24/03 ,  H01L24/05 ,  H01L24/06 ,  H01L24/08 ,  H01L24/80 ,  H01L24/83 ,  H01L27/0688 ,  H01L27/14609 ,  H01L27/14621 ,  H01L27/14625 ,  H01L27/1464 ,  H01L27/14645 ,  H01L27/1469 ,  H01L2221/1031 ,  H01L2224/02245 ,  H01L2224/05027 ,  H01L2224/0508 ,  H01L2224/05124 ,  H01L2224/05147 ,  H01L2224/05166 ,  H01L2224/05181 ,  H01L2224/05546 ,  H01L2224/05547 ,  H01L2224/05571 ,  H01L2224/05573 ,  H01L2224/05578 ,  H01L2224/05647 ,  H01L2224/05686 ,  H01L2224/08121 ,  H01L2224/08145 ,  H01L2224/0903 ,  H01L2224/80011 ,  H01L2224/80013 ,  H01L2224/80035 ,  H01L2224/80091 ,  H01L2224/80097 ,  H01L2224/80203 ,  H01L2224/80345 ,  H01L2224/80357 ,  H01L2224/80895 ,  H01L2224/80896 ,  H01L2224/80935 ,  H01L2224/83345 ,  H01L2924/00014 ,  H01L2924/053 ,  H01L2924/12043 ,  H01L2924/13091 ,  H04N5/369 ,  H01L2924/00012 ,  H01L2924/05442 ,  H01L2924/05042 ,  H01L2924/049 ,  H01L2924/00 ,  H01L2224/05552

Abstract: Disclosed herein is a semiconductor device, including: a first substrate including a first electrode, and a first insulating film configured from a diffusion preventing material for the first electrode and covering a periphery of the first electrode, the first electrode and the first insulating film cooperating with each other to configure a bonding face; and a second substrate bonded to and provided on the first substrate and including a second electrode joined to the first electrode, and a second insulating film configured from a diffusion preventing material for the second electrode and covering a periphery of the second electrode, the second electrode and the second insulating film cooperating with each other to configure a bonding face to the first substrate.

公开(公告)号：US20170263666A1

公开(公告)日：2017-09-14

申请号：US15607845

申请日：2017-05-30

Applicant: Sony Corporation

Inventor： Nobutoshi Fujii ,  Yoshiya Hagimoto ,  Kenichi Aoyagi ,  Yoshihisa Kagawa

IPC: H01L27/146

CPC classification number: H01L27/14636 ,  H01L21/2007 ,  H01L21/76823 ,  H01L21/76828 ,  H01L21/76864 ,  H01L27/14612 ,  H01L27/14618 ,  H01L27/14634 ,  H01L27/1464 ,  H01L27/14643 ,  H01L27/14689 ,  H01L27/1469 ,  H04N5/2254

Abstract: A semiconductor device includes a first substrate having an attaching surface on which first electrodes and a first insulating film are exposed, an insulating thin film that covers the attaching surface of the first substrate, and a second substrate which has an attaching surface on which second electrodes and a second insulating film are exposed and is attached to the first substrate in a state in which the attaching surface of the second substrate and the attaching surface of the first substrate are attached together sandwiching the insulating thin film therebetween, and the first electrodes and the second electrodes deform and break a part of the insulating thin film so as to be directly electrically connected to each other.

公开(公告)号：US09443802B2

公开(公告)日：2016-09-13

申请号：US14718942

申请日：2015-05-21

Applicant: Sony Corporation

Inventor： Yoshihisa Kagawa ,  Kenichi Aoyagi ,  Yoshiya Hagimoto ,  Nobutoshi Fujii

IPC: H01L23/48 ,  H01L23/52 ,  H01L29/40 ,  H01L23/528 ,  H01L21/768 ,  H01L27/146 ,  H01L23/00 ,  H04N5/369 ,  H01L23/532 ,  H01L27/06

CPC classification number: H01L27/14636 ,  H01L21/76807 ,  H01L21/7684 ,  H01L21/76841 ,  H01L21/76843 ,  H01L23/481 ,  H01L23/528 ,  H01L23/5283 ,  H01L23/53223 ,  H01L23/53238 ,  H01L23/53266 ,  H01L23/53295 ,  H01L23/564 ,  H01L24/03 ,  H01L24/05 ,  H01L24/06 ,  H01L24/08 ,  H01L24/80 ,  H01L24/83 ,  H01L27/0688 ,  H01L27/14609 ,  H01L27/14621 ,  H01L27/14625 ,  H01L27/1464 ,  H01L27/14645 ,  H01L27/1469 ,  H01L2221/1031 ,  H01L2224/02245 ,  H01L2224/05027 ,  H01L2224/0508 ,  H01L2224/05124 ,  H01L2224/05147 ,  H01L2224/05166 ,  H01L2224/05181 ,  H01L2224/05546 ,  H01L2224/05547 ,  H01L2224/05571 ,  H01L2224/05573 ,  H01L2224/05578 ,  H01L2224/05647 ,  H01L2224/05686 ,  H01L2224/08121 ,  H01L2224/08145 ,  H01L2224/0903 ,  H01L2224/80011 ,  H01L2224/80013 ,  H01L2224/80091 ,  H01L2224/80097 ,  H01L2224/80203 ,  H01L2224/80345 ,  H01L2224/80357 ,  H01L2224/80895 ,  H01L2224/80896 ,  H01L2224/83345 ,  H01L2924/00014 ,  H01L2924/12043 ,  H01L2924/13091 ,  H04N5/369 ,  H01L2924/00012 ,  H01L2924/05442 ,  H01L2924/05042 ,  H01L2924/053 ,  H01L2924/049 ,  H01L2924/00 ,  H01L2224/05552

Abstract: Disclosed herein is a semiconductor device, including: a first substrate including a first electrode, and a first insulating film configured from a diffusion preventing material for the first electrode and covering a periphery of the first electrode, the first electrode and the first insulating film cooperating with each other to configure a bonding face; and a second substrate bonded to and provided on the first substrate and including a second electrode joined to the first electrode, and a second insulating film configured from a diffusion preventing material for the second electrode and covering a periphery of the second electrode, the second electrode and the second insulating film cooperating with each other to configure a bonding face to the first substrate.

公开(公告)号：US09263496B2

公开(公告)日：2016-02-16

申请号：US14371550

申请日：2013-01-08

Applicant: Sony Corporation

Inventor： Nobutoshi Fujii ,  Kenichi Aoyagi ,  Yoshiya Hagimoto ,  Hayato Iwamoto

IPC: H01L21/00 ,  H01L27/146 ,  H01L25/00 ,  H01L31/18 ,  H01L25/065

CPC classification number: H01L27/14687 ,  H01L25/0657 ,  H01L25/50 ,  H01L27/14634 ,  H01L27/1464 ,  H01L27/14683 ,  H01L27/14689 ,  H01L27/1469 ,  H01L31/1876 ,  H01L2924/0002 ,  Y02E10/50 ,  Y02P70/521 ,  H01L2924/00

Abstract: The present technology includes: bonding a device formation side of a first substrate having a first device and a device formation side of a second substrate having a second device in opposition to each other; forming a protective film on at least an edge of the second substrate having the second device; and reducing a thickness of the first substrate.

Abstract translation: 本技术包括：将具有第一器件的第一衬底的器件形成侧和具有第二器件的第二衬底的器件形成侧彼此相对地接合; 在具有第二装置的第二基板的至少边缘上形成保护膜; 并减小第一基板的厚度。

公开(公告)号：US09190275B2

公开(公告)日：2015-11-17

申请号：US14206489

申请日：2014-03-12

Applicant: Sony Corporation

Inventor： Nobutoshi Fujii ,  Yoshiya Hagimoto ,  Kenichi Aoyagi ,  Yoshihisa Kagawa

IPC: H01L21/20 ,  H01L21/768 ,  H01L27/146

CPC classification number: H01L27/14636 ,  H01L21/2007 ,  H01L21/76823 ,  H01L21/76828 ,  H01L21/76864 ,  H01L27/14612 ,  H01L27/14618 ,  H01L27/14634 ,  H01L27/1464 ,  H01L27/14643 ,  H01L27/14689 ,  H01L27/1469 ,  H04N5/2254

Abstract: A semiconductor device includes a first substrate having an attaching surface on which first electrodes and a first insulating film are exposed, an insulating thin film that covers the attaching surface of the first substrate, and a second substrate which has an attaching surface on which second electrodes and a second insulating film are exposed and is attached to the first substrate in a state in which the attaching surface of the second substrate and the attaching surface of the first substrate are attached together sandwiching the insulating thin film therebetween, and the first electrodes and the second electrodes deform and break a part of the insulating thin film so as to be directly electrically connected to each other.

Abstract translation: 半导体器件包括具有第一电极和第一绝缘膜露出的附着面的第一基板，覆盖第一基板的安装面的绝缘薄膜和具有安装面的第二基板，第二基板 并且第二绝缘膜在第二基板的安装表面和第一基板的附接表面连接在一起的状态下暴露并附着到第一基板，夹住绝缘薄膜，并且第一电极和 第二电极使绝缘薄膜的一部分变形并断开，以便彼此直接电连接。

公开(公告)号：US11569123B2

公开(公告)日：2023-01-31

申请号：US17194641

申请日：2021-03-08

Applicant: Sony Corporation

Inventor： Yoshihisa Kagawa ,  Kenichi Aoyagi ,  Yoshiya Hagimoto ,  Nobutoshi Fujii

IPC: H01L31/0232 ,  H01L21/768 ,  H01L23/528 ,  H01L27/146 ,  H01L23/00 ,  H04N5/369 ,  H01L23/532 ,  H01L23/48 ,  H01L27/06

Abstract: Disclosed herein is a semiconductor device, including: a first substrate including a first electrode, and a first insulating film configured from a diffusion preventing material for the first electrode and covering a periphery of the first electrode, the first electrode and the first insulating film cooperating with each other to configure a bonding face; and a second substrate bonded to and provided on the first substrate and including a second electrode joined to the first electrode, and a second insulating film configured from a diffusion preventing material for the second electrode and covering a periphery of the second electrode, the second electrode and the second insulating film cooperating with each other to configure a bonding face to the first substrate.

公开(公告)号：US20190386056A1

公开(公告)日：2019-12-19

申请号：US16554347

申请日：2019-08-28

Applicant: Sony Corporation

Inventor： Nobutoshi Fujii ,  Yoshiya Hagimoto ,  Kenichi Aoyagi ,  Yoshihisa Kagawa

IPC: H01L27/146 ,  H01L21/20 ,  H01L21/768 ,  H04N5/225

Abstract: A semiconductor device includes a first substrate having an attaching surface on which first electrodes and a first insulating film are exposed, an insulating thin film that covers the attaching surface of the first substrate, and a second substrate which has an attaching surface on which second electrodes and a second insulating film are exposed and is attached to the first substrate in a state in which the attaching surface of the second substrate and the attaching surface of the first substrate are attached together sandwiching the insulating thin film therebetween, and the first electrodes and the second electrodes deform and break a part of the insulating thin film so as to be directly electrically connected to each other.