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15 条记录 (耗时 0.013 秒)

    Memory device and operation method thereof
    1.
    发明授权
    Memory device and operation method thereof 有权
    存储器件及其操作方法

    公开(公告)号：US09524758B2

    公开(公告)日：2016-12-20

    申请号：US14875364

    申请日：2015-10-05

    申请人： SK hynix Inc.

    发明人： Hyung-Sik Won

    IPC分类号： G11C7/00 ,  G11C7/06 ,  G11C7/10 ,  G11C7/12

    CPC分类号： G11C7/06 ,  G11C7/065 ,  G11C7/10 ,  G11C7/12 ,  G11C11/4091 ,  G11C2207/002 ,  G11C2207/005

    摘要： A memory device may include a cell array including a plurality of memory cells and a bit line coupled to the plurality of memory cells; a sense amplifier suitable for amplifying a voltage difference between a first line and a second line; and a separation unit suitable for electrically coupling the bit line and the first line, and electrically separating the bit line and the first line during an initial period of an operation of the sense amplifier.

    摘要翻译： 存储器装置可以包括包括多个存储器单元的单元阵列和耦合到多个存储单元的位线; 适于放大第一线和第二线之间的电压差的读出放大器; 以及适于电位耦合位线和第一线的分离单元，以及在读出放大器的操作的初始周期期间电位分隔位线和第一线。

    MEMORY SYSTEM
    2.
    发明申请
    MEMORY SYSTEM 有权

    公开(公告)号：US20230094144A1

    公开(公告)日：2023-03-30

    申请号：US18060524

    申请日：2022-11-30

    申请人： SK hynix Inc.

    发明人： Wan-Jun Roh ,  Hyun-Sup Kim ,  Hyung-Sik Won

    IPC分类号： G06F11/30 ,  G11C5/14 ,  G11C11/406 ,  G11C11/4074 ,  G06F12/0877

    摘要： A memory system may improve the endurance and performance of a plurality of memories included in the memory system mounted on a server system or a data processing system. For example, the memory system may throttle energy of a first memory using a second memory having a different characteristic from the first memory, control accesses to a memory region according to a refresh cycle, and control accesses to memories having different temperatures according to a priority of a request for each of the memories.

    Memory system
    3.
    发明授权
    Memory system 有权

    公开(公告)号：US11544168B2

    公开(公告)日：2023-01-03

    申请号：US16858455

    申请日：2020-04-24

    申请人： SK hynix Inc.

    发明人： Wan-Jun Roh ,  Hyung-Sup Kim ,  Hyung-Sik Won

    IPC分类号： G06F11/30 ,  G11C5/14 ,  G11C11/406 ,  G11C11/4074 ,  G06F12/0877

    摘要： A memory system may improve the endurance and performance of a plurality of memories included in the memory system mounted on a server system or a data processing system. For example, the memory system may throttle energy of a first memory using a second memory having a different characteristic from the first memory, control accesses to a memory region according to a refresh cycle, and control accesses to memories having different temperatures according to a priority of a request for each of the memories.

    Memory system for activating redundancy memory cell and operating method thereof
    5.
    发明授权
    Memory system for activating redundancy memory cell and operating method thereof 有权

    公开(公告)号：US10998082B2

    公开(公告)日：2021-05-04

    申请号：US16568111

    申请日：2019-09-11

    申请人： SK hynix Inc.

    发明人： Hyung-Sik Won ,  Hyungsup Kim

    IPC分类号： G11C16/06 ,  G11C29/00 ,  G11C29/44 ,  G11C16/34 ,  G11C13/00 ,  G11C16/30 ,  G11C29/52 ,  G11C29/04

    摘要： A memory system includes a memory device and a controller. The memory device includes a memory cell array including a normal memory cell area and a redundancy memory cell area, the redundancy memory cell area having a replacement memory cell region and a reserved memory cell region; a register suitable for generating a first signal indicating existence of the reserved memory cell region; and a fuse unit suitable for activating the reserved memory cell region based on the first signal. The controller assigns an address for accessing a reserved memory cell of the reserved memory cell region based on the first signal. A replacement memory cell in the replacement memory cell region replaces a failed memory cell in the normal memory cell region, and the reserved memory cell in the reserved memory cell region remains without replacing any failed memory cell in the normal memory cell region.

    Memory system and operating method thereof
    7.
    发明授权
    Memory system and operating method thereof 有权

    公开(公告)号：US10453550B2

    公开(公告)日：2019-10-22

    申请号：US16044322

    申请日：2018-07-24

    申请人： SK hynix Inc.

    发明人： Hyung-Sik Won ,  Hyungsup Kim

    IPC分类号： G11C16/06 ,  G11C29/00 ,  G11C29/44 ,  G11C16/34 ,  G11C13/00 ,  G11C16/30

    摘要： A memory system includes a memory device and a controller. The memory device includes a memory cell array including a normal memory cell area and a redundancy memory cell area, the redundancy memory cell area having a replacement memory cell region and a reserved memory cell region; a register suitable for generating a first signal indicating existence of the reserved memory cell region; and a fuse unit suitable for activating the reserved memory cell region based on the first signal. The controller assigns an address for accessing a reserved memory cell of the reserved memory cell region based on the first signal. A replacement memory cell in the replacement memory cell region replaces a failed memory cell in the normal memory cell region, and the reserved memory cell in the reserved memory cell region remains without replacing any failed memory cell in the normal memory cell region.

    Semiconductor device, semiconductor memory device and communication system
    8.
    发明授权
    Semiconductor device, semiconductor memory device and communication system 有权

    公开(公告)号：US09923627B2

    公开(公告)日：2018-03-20

    申请号：US14930302

    申请日：2015-11-02

    申请人： SK hynix Inc.

    发明人： Hyung-Sik Won

    IPC分类号： H04L27/00 ,  H04B7/24

    CPC分类号： H04B7/24

    摘要： A semiconductor device may include: a conversion value generator suitable for detecting first and second transition factors that are independent of each other, and generating first and second conversion values corresponding to the first and second transition factors, respectively; and a signal converter suitable for generating an output signal by reflecting the first and second conversion values into an input signal.

    Memory device and method for operating the same
    9.
    发明授权
    Memory device and method for operating the same 有权

    公开(公告)号：US09847118B1

    公开(公告)日：2017-12-19

    申请号：US15386082

    申请日：2016-12-21

    申请人： SK hynix Inc.

    发明人： Hyung-Sik Won

    IPC分类号： G11C8/10 ,  G11C11/406

    CPC分类号： G11C11/406 ,  G11C11/40622 ,  G11C11/4076

    摘要： A memory device may include: a cell array comprising a main area and an adjacent area with a plurality of main memory cells disposed in the main area and a plurality of adjacent memory cells disposed in the adjacent area; a control circuit suitable for controlling a row operation and column operation of the cell array; and an adjacent area controller suitable for controlling adjacent memory cells so that the adjacent memory cells are operated under a different condition from the main memory cells.

    Driver and semiconductor memory device including the same
    10.
    发明授权
    Driver and semiconductor memory device including the same 有权
    驱动器和半导体存储器件包括相同的

    公开(公告)号：US09455003B2

    公开(公告)日：2016-09-27

    申请号：US14308449

    申请日：2014-06-18

    申请人： SK hynix Inc.

    发明人： Hyung-Sik Won

    IPC分类号： G11C7/10 ,  G11C7/12

    CPC分类号： G11C7/12 ,  G11C7/1048 ,  G11C7/1096

    摘要： A driver includes a driving block suitable for driving a data transferred through a first signal line to a second signal line, a first precharge unit suitable for precharging the second signal line with a first driving power during a first precharge operation; and a second precharge unit suitable for precharging the second signal line with a second driving power which is different from the first driving power during a second precharge operation performed subsequent to the first precharge operation.

    摘要翻译： 驱动器包括适于驱动通过第一信号线传送到第二信号线的数据的驱动块，第一预充电单元，适于在第一预充电操作期间以第一驱动功率对第二信号线进行预充电; 以及第二预充电单元，其适于在所述第一预充电操作之后执行的第二预充电操作期间以与所述第一驱动功率不同的第二驱动功率对所述第二信号线进行预充电。