公开(公告)号：US20160133836A1

公开(公告)日：2016-05-12

申请号：US14538763

申请日：2014-11-11

Applicant: SANDISK 3D LLC

Inventor： Zhida Lan ,  Abhijit Bandyopadhyay ,  Christopher Petti ,  Li Xiao ,  Girish Nagavarapu

IPC: H01L45/00 ,  H01L27/24 ,  G11C13/00

CPC classification number: H01L45/16 ,  G11C13/0004 ,  G11C13/0007 ,  G11C13/0011 ,  G11C13/0069 ,  G11C2013/0083 ,  G11C2013/0092 ,  G11C2213/71 ,  G11C2213/77 ,  G11C2213/78 ,  G11C2213/79 ,  H01L27/2481 ,  H01L27/249 ,  H01L45/04 ,  H01L45/146 ,  H01L45/1683

Abstract: The manufacturing of the non-volatile storage system includes depositing one or more layers of reversible resistance-switching material for a non-volatile storage element. Prior to operation, either during manufacturing or afterwards, a forming operation is performed. In one embodiment, the forming operation includes applying a forming voltage to the one or more layers of reversible resistance-switching material to form a first region that includes a resistor and a second region that can reversibly change resistance at a low current, the resistor is formed in response to the forming condition and is not deposited on the device. In some embodiments, programming the non-volatile storage element includes applying a programming voltage that increases in voltage over time at low current but does not exceed the final forming voltage.

Abstract translation: 非易失性存储系统的制造包括为非易失性存储元件沉积一层或多层可逆电阻切换材料。 在操作之前，在制造期间或之后，进行成形操作。 在一个实施例中，形成操作包括向一个或多个可逆电阻切换材料层施加成形电压以形成包括电阻器的第一区域和可在低电流下可逆地改变电阻的第二区域，电阻器 响应于成形条件而形成，并且不会沉积在该装置上。 在一些实施例中，对非易失性存储元件的编程包括施加在低电流下随时间增加的电压但不超过最终形成电压的编程电压。

公开(公告)号：US09472758B2

公开(公告)日：2016-10-18

申请号：US14538763

申请日：2014-11-11

Applicant: SANDISK 3D LLC

Inventor： Zhida Lan ,  Abhijit Bandyopadhyay ,  Christopher Petti ,  Li Xiao ,  Girish Nagavarapu

IPC: G11C5/02 ,  H01L45/00 ,  G11C13/00 ,  H01L27/24

CPC classification number: H01L45/16 ,  G11C13/0004 ,  G11C13/0007 ,  G11C13/0011 ,  G11C13/0069 ,  G11C2013/0083 ,  G11C2013/0092 ,  G11C2213/71 ,  G11C2213/77 ,  G11C2213/78 ,  G11C2213/79 ,  H01L27/2481 ,  H01L27/249 ,  H01L45/04 ,  H01L45/146 ,  H01L45/1683

Abstract: The manufacturing of the non-volatile storage system includes depositing one or more layers of reversible resistance-switching material for a non-volatile storage element. Prior to operation, either during manufacturing or afterwards, a forming operation is performed. In one embodiment, the forming operation includes applying a forming voltage to the one or more layers of reversible resistance-switching material to form a first region that includes a resistor and a second region that can reversibly change resistance at a low current, the resistor is formed in response to the forming condition and is not deposited on the device. In some embodiments, programming the non-volatile storage element includes applying a programming voltage that increases in voltage over time at low current but does not exceed the final forming voltage.

Abstract translation: 非易失性存储系统的制造包括为非易失性存储元件沉积一层或多层可逆电阻切换材料。 在操作之前，在制造期间或之后，进行成形操作。 在一个实施例中，形成操作包括向一个或多个可逆电阻切换材料层施加成形电压以形成包括电阻器的第一区域和可在低电流下可逆地改变电阻的第二区域，电阻器 响应于成形条件而形成，并且不会沉积在该装置上。 在一些实施例中，对非易失性存储元件的编程包括施加在低电流下随时间增加的电压但不超过最终形成电压的编程电压。