公开(公告)号：US20170170023A1

公开(公告)日：2017-06-15

申请号：US15291268

申请日：2016-10-12

申请人： Samsung Electronics Co., Ltd.

发明人： Won Woong CHUNG ,  Youn Joung CHO ,  Jung Sik CHOI

IPC分类号： H01L21/285 ,  H01L21/768 ,  H01L21/8238

CPC分类号： H01L21/28518 ,  H01L21/2855 ,  H01L21/76843 ,  H01L21/76895 ,  H01L21/823814 ,  H01L21/823871 ,  H01L21/823878 ,  H01L23/485 ,  H01L29/66515 ,  H01L29/66545 ,  H01L29/78

摘要： There is provides a method of fabricating a semiconductor device to decrease contact resistance of source/drain regions and gate electrodes and thereby improve operation performance. The method includes providing an exposed silicon region, forming a rare earth metal silicide film on the exposed silicon region, the rare earth metal silicide film contacting the silicon region, and forming a contact on the rare earth metal silicide film, the contact being electrically connected to the exposed silicon region, wherein the rare earth metal silicide film is formed by simultaneously supplying a rare earth metal and silicon to the exposed silicon region using physical vapor deposition.

公开(公告)号：US20180211842A1

公开(公告)日：2018-07-26

申请号：US15414913

申请日：2017-01-25

申请人： SAMSUNG ELECTRONICS CO., LTD.

发明人： Won Woong CHUNG ,  Sun hye HWANG ,  Youn Joung CHO ,  Jung Sik CHOI ,  Xiaobing ZHOU ,  Brian David REKKEN ,  Byung Keun HWANG ,  Michael David TELGENHOFF

IPC分类号： H01L21/28 ,  H01L21/02

CPC分类号： H01L21/28282 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/02211 ,  H01L21/0228

摘要： A method for fabricating a semiconductor device includes forming a structure with a height difference on a substrate and forming a dielectric layer structure on the structure using an atomic layer deposition (ALD) method. Forming the dielectric layer structure includes forming a first dielectric layer including silicon nitride on the structure with the height difference. Forming the first dielectric layer includes feeding a first gas including pentachlorodisilane (PCDS) or diisopropylamine pentachlorodisilane (DPDC) as a silicon precursor, and a second gas including nitrogen components into a chamber including the substrate such that the first dielectric layer is formed in situ on the structure having the height difference.