公开(公告)号：US20180211842A1

公开(公告)日：2018-07-26

申请号：US15414913

申请日：2017-01-25

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Won Woong CHUNG ,  Sun hye HWANG ,  Youn Joung CHO ,  Jung Sik CHOI ,  Xiaobing ZHOU ,  Brian David REKKEN ,  Byung Keun HWANG ,  Michael David TELGENHOFF

IPC: H01L21/28 ,  H01L21/02

CPC classification number: H01L21/28282 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/02211 ,  H01L21/0228

Abstract: A method for fabricating a semiconductor device includes forming a structure with a height difference on a substrate and forming a dielectric layer structure on the structure using an atomic layer deposition (ALD) method. Forming the dielectric layer structure includes forming a first dielectric layer including silicon nitride on the structure with the height difference. Forming the first dielectric layer includes feeding a first gas including pentachlorodisilane (PCDS) or diisopropylamine pentachlorodisilane (DPDC) as a silicon precursor, and a second gas including nitrogen components into a chamber including the substrate such that the first dielectric layer is formed in situ on the structure having the height difference.