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公开(公告)号：US20210098261A1
公开(公告)日：2021-04-01
申请号：US17121233
申请日：2020-12-14
Applicant: Samsung Electronics Co., Ltd.
Inventor： Chae Lyoung KIM , Tae-Hong KIM , Jung-Min OH , YUNGJUN KIM , INGI KIM , BOUN YOON , HYOSAN LEE , Sol HAN
IPC: H01L21/306 , H01L21/02 , H01L21/67 , B24B37/20 , B24B53/017
Abstract: A cleaning method includes supplying, to a substrate by a dual nozzle, a first chemical liquid and a first spray, the first spray including a first liquid dissolving the first chemical liquid, and moving the dual nozzle in a first direction. The the dual nozzle comprises a first nozzle and a second nozzle, the first nozzle supplies the first spray to the substrate and the second nozzle supplies the first chemical liquid to the substrate while the dual nozzle moves in the first direction, the first nozzle proceeds ahead of the second nozzle in the first direction while the dual nozzle moves in the first direction, and the first nozzle has a distance 3 cm to 7 cm from the second nozzle.
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公开(公告)号：US20200083063A1
公开(公告)日：2020-03-12
申请号：US16371461
申请日：2019-04-01
Applicant: Samsung Electronics Co., Ltd.
Inventor： Seung-Min SHIN , Seok-Hoon KIM , Young-Hoo KIM , In-Gi KIM , Tae-Hong KIM , Sung-Hyun PARK , Jin-Woo LEE , Ji-Hoon CHA , Yong-Jun CHOI
Abstract: A dry cleaning apparatus includes a chamber, a substrate support supporting a substrate within the chamber, a shower head arranged in an upper portion of the chamber to supply a dry cleaning gas toward the substrate, the shower head including an optical window transmitting a laser light therethrough toward the substrate support, a plasma generator generating plasma from the dry cleaning gas, and a laser irradiator irradiating the laser light on the substrate through the optical window and the plasma to heat the substrate.
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公开(公告)号：US20250091077A1
公开(公告)日：2025-03-20
申请号：US18661139
申请日：2024-05-10
Applicant: SAMSUNG ELECTRONICS CO, LTD.
Inventor： Min Suk KANG , Young-Hoo KIM , Sung Hyun PARK , Jin Seon YOU , Tae-Hong KIM , Woo Gwan SHIM
Abstract: A home port includes: a cylindrical body including: an open upper, a lower end, and an outlet in the lower end of the cylindrical body; a cover covering the open upper end; a pipe connected to the outlet; and a first bracket between the cover and the outlet, wherein a hole is provided in the first bracket, the first bracket has an inclined surface inclined from a first side of the first bracket to a second side of the first bracket, a vertical level of the first side of the first bracket is higher than a vertical level of the second side of the first bracket, and the hole of the first bracket is provided at the second side of the first bracket.
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公开(公告)号：US20140091460A1
公开(公告)日：2014-04-03
申请号：US14094996
申请日：2013-12-03
Applicant: Samsung Electronics Co., Ltd.
Inventor： Chung-Sun LEE , Jung-Hwan KIM , Tae-Hong KIM , Hyun-Jung SONG , Sun-Pil YOUN
IPC: H01L25/065
CPC classification number: H01L25/0657 , H01L21/563 , H01L23/3128 , H01L23/3135 , H01L24/13 , H01L24/16 , H01L24/73 , H01L24/97 , H01L25/0655 , H01L25/105 , H01L25/50 , H01L2224/0401 , H01L2224/0557 , H01L2224/13025 , H01L2224/16145 , H01L2224/16146 , H01L2224/16225 , H01L2224/16235 , H01L2224/16265 , H01L2224/17181 , H01L2224/32145 , H01L2224/32225 , H01L2224/45139 , H01L2224/48227 , H01L2224/73204 , H01L2224/73207 , H01L2224/73253 , H01L2224/73265 , H01L2224/97 , H01L2225/0651 , H01L2225/06513 , H01L2225/06517 , H01L2225/06541 , H01L2225/06586 , H01L2225/06589 , H01L2225/1023 , H01L2225/1058 , H01L2225/1094 , H01L2924/00014 , H01L2924/15311 , H01L2924/181 , H01L2924/18161 , H01L2924/3511 , H01L2924/00 , H01L2924/00012 , H01L2224/05552 , H01L2224/81 , H01L2224/83
Abstract: A stack of semiconductor chips, a semiconductor device, and a method of manufacturing are disclosed. The stack of semiconductor chips may comprise a first chip of the stack, a second chip of the stack over the first chip, conductive bumps, a homogeneous integral underfill material, and a molding material. The conductive bumps may extend between an upper surface of the first chip and a lower surface of the second chip. The homogeneous integral underfill material may be interposed between the first chip and the second chip, encapsulate the conductive bumps, and extend along sidewalls of the second chip. The homogeneous integral underfill material may have an upper surface extending in a direction parallel to an upper surface of the second chip and located adjacent the upper surface of the second chip. The molding material may be on outer side surfaces of the homogeneous integral underfill material above the upper surface of the first chip, wherein, in view of a first cross sectional profile, the molding material is separated from sidewalls of the second chip by the homogeneous integral underfill material such that the molding material does not contact sidewalls of the second chip.
Abstract translation: 公开了一叠半导体芯片，半导体器件和制造方法。 堆叠的半导体芯片可以包括堆叠的第一芯片，第一芯片上的堆叠的第二芯片，导电凸块，均匀的整体底部填充材料和模制材料。 导电凸块可以在第一芯片的上表面和第二芯片的下表面之间延伸。 均匀整体的底部填充材料可以插入在第一芯片和第二芯片之间，封装导电凸块，并且沿着第二芯片的侧壁延伸。 均匀整体的底部填充材料可以具有在与第二芯片的上表面平行的方向上延伸并且位于第二芯片的上表面附近的上表面。 模制材料可以在第一芯片的上表面之上的均匀整体底部填充材料的外侧表面上，其中，从第一横截面轮廓的角度来看，模制材料通过均匀的积分与第二芯片的侧壁分离 底部填充材料，使得模制材料不接触第二芯片的侧壁。
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公开(公告)号：US20250079359A1
公开(公告)日：2025-03-06
申请号：US18785080
申请日：2024-07-26
Applicant: Samsung Electronics Co., Ltd.
Inventor： Jeong Wan HAN , Byung Kyu KIM , Jeonghun KIM , Tae-Hong KIM , Pyojin JEON , Seok Hwan JEONG
IPC: H01L23/00 , H01L23/31 , H01L23/522 , H01L23/532 , H10B12/00
Abstract: A semiconductor chip includes a substrate. a device layer and an interconnection layer sequentially on the substrate, and a bonding pad on the interconnection layer. A bottom surface of the bonding pad may be located at a constant level, and a side surface of the bonding pad may have a roughened shape.
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Patent Agency Ranking
公开(公告)号：US20170297164A1
公开(公告)日：2017-10-19
申请号：US15407569
申请日：2017-01-17
Applicant: Samsung Electronics Co., Ltd.
Inventor： Tae-Hong KIM , Jung-Min OH , SeokHoon KIM , Chae Lyoung KIM , Mihyun PARK , Hyosan LEE
IPC: B24B37/20 , B08B3/08 , B08B3/02 , B24B37/005 , B05D1/00
CPC classification number: B24B37/20 , B05D1/60 , B08B3/024 , B08B3/08 , B24B37/005 , C23C16/4407 , H01L21/00 , H01L21/67
Abstract: Aspects of the inventive concepts provide a cleaning apparatus and a substrate processing system including the same. The cleaning apparatus includes a chuck receiving a substrate, a first nozzle providing first cleaning water or a first organic solvent onto the substrate at a first pressure, and a second nozzle disposed adjacent to the first nozzle. The second nozzle provides a cleaning solution including second cleaning water and a second organic solvent onto the substrate at a second pressure lower than the first pressure.
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公开(公告)号：US20210343552A1
公开(公告)日：2021-11-04
申请号：US17376369
申请日：2021-07-15
Applicant: Samsung Electronics Co., Ltd.
Inventor： Seung-Min SHIN , Seok-Hoon KIM , Young-Hoo KIM , In-Gi KIM , Tae-Hong KIM , Sung-Hyun PARK , Jin-Woo LEE , Ji-Hoon CHA , Yong-Jun CHOI
Abstract: A dry cleaning apparatus includes a chamber, a substrate support supporting a substrate within the chamber, a shower head arranged in an upper portion of the chamber to supply a dry cleaning gas toward the substrate, the shower head including an optical window transmitting a laser light therethrough toward the substrate support, a plasma generator generating plasma from the dry cleaning gas, and a laser irradiator irradiating the laser light on the substrate through the optical window and the plasma to heat the substrate.
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公开(公告)号：US20190057882A1
公开(公告)日：2019-02-21
申请号：US15867791
申请日：2018-01-11
Applicant: Samsung Electronics Co., Ltd.
Inventor： Tae-Hong KIM , Jung-Min OH , Jin-Kyu KIM , So-Young PARK , Kang-Suk LEE
Abstract: A nozzle includes a nozzle body having a hollow portion, and a mixing chamber and a discharge guide sequentially connected to the hollow portion, and an engagement member having a gas supply passage formed to supply a gas therethrough, inserted and fixed into the hollow portion and spaced apart from an inner face of the hollow portion to form a liquid gas supply passage which supplies a liquid toward a central axis of an exit of the gas supply passage. The mixing chamber is connected to the gas supply passage and the liquid supply passage to form liquid droplets. The gas supply passage has a first cross-sectional area, the mixing chamber has a second cross-sectional area substantially the same as the first cross-sectional area, and the discharge guide has a third cross-sectional area smaller than the first cross-sectional area.
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公开(公告)号：US20140095177A1
公开(公告)日：2014-04-03
申请号：US14023852
申请日：2013-09-11
Applicant: Samsung Electronics Co., Ltd.
Inventor： Tae-Hong KIM
IPC: G10L21/06
CPC classification number: G10L21/06 , G08C17/02 , G08C23/04 , G08C2201/31 , G10L2015/223
Abstract: An electronic apparatus includes a voice acquirer which receives a first voice, a voice processor which processes a voice signal, a communication unit which communicates with at least one external electronic apparatus and receives information on at least one second voice, and a controller which determines whether the first voice is a user's command based on the information on at least one second voice transmitted by the communication unit, and if the first voice is not the user's command, does not perform an operation according to the first voice.
Abstract translation: 电子设备包括：接收第一语音的语音获取器，处理语音信号的语音处理器，与至少一个外部电子设备进行通信并与至少一个第二语音相关的信息的通信单元;以及控制器，其确定是否 第一语音是基于由通信单元发送的至少一个第二语音的信息的用户命令，并且如果第一语音不是用户的命令，则不执行根据第一语音的操作。
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10.发明申请公开(公告)号：US20250153122A1
公开(公告)日：2025-05-15
申请号：US18741245
申请日：2024-06-12
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： SUNGHYUN PARK , Minsuk KANG , Young-Hoo KIM , Jinseon YOU , Tae-Hong KIM , Woogwan SHIM
IPC: B01F35/221 , B01F35/21 , B01F35/90 , B01F35/92 , B01F101/58 , H01L21/67
Abstract: A chemical liquid exchange method includes: recovering, by a first recycling tank, a first portion of a first chemical liquid that was previously used in a chamber; recovering, by a second recycling tank, a second portion of the first chemical liquid that was previously used in the chamber; supplying, from the first recycling tank, the first portion of the first chemical liquid to a first sub-tank; draining, from the second recycling tank, the second portion of the first chemical liquid; supplying, from the first sub-tank, the first portion of the first chemical liquid to a main tank; and receiving, by a second sub-tank, a second chemical liquid from an outside; and supplying, from the second sub-tank, the second chemical liquid to the main tank.
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