公开(公告)号：US20250167012A1

公开(公告)日：2025-05-22

申请号：US18794556

申请日：2024-08-05

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jihoon JEONG ,  Junho YOON ,  Young-Hoo KIM ,  Taeheon KIM ,  Woogwan SHIM ,  Jongwon LEE ,  Junho LEE ,  Jiwoong JUNG

IPC: H01L21/67 ,  B08B3/04 ,  B08B3/08 ,  H01L21/02

Abstract: A substrate processing apparatus includes a stage configured to support a substrate, a rotation driving portion configured to rotate the stage around a first axis extending in a vertical direction, a first nozzle arm disposed on the stage and configured to rotate around a second axis parallel to the first axis, and a second nozzle arm disposed on the stage and configured to rotate around a third axis parallel to the second axis. The first nozzle arm includes a first nozzle supporting member extended parallel to the stage, a first connection member coupled to an end of the first nozzle supporting member, the first connection member having a stepwise shape, and a first nozzle coupled to the first connection member and configured to spray a fluidic material.

公开(公告)号：US20130240959A1

公开(公告)日：2013-09-19

申请号：US13716402

申请日：2012-12-17

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Mongsup LEE ,  Yoonho SON ,  Woogwan SHIM ,  Chan Min LEE ,  Inseak HWANG

IPC: H01L29/78

CPC classification number: H01L29/78 ,  H01L27/10876 ,  H01L27/10885 ,  H01L27/10888

Abstract: A semiconductor device may include a substrate including an active pattern delimited by a device isolation pattern, a gate electrode crossing the active pattern, a first impurity region and a second impurity region in the active pattern on both sides of the gate electrode, a bit line crossing the gate electrode, a first contact electrically connecting the first impurity region with the bit line, and a first nitride pattern on a lower side surface of the first contact. A width of the first contact measured perpendicular to an extending direction of the bit line may be substantially equal to that of the bit line.

Abstract translation: 半导体器件可以包括：衬底，其包括由器件隔离图案限定的有源图案，与有源图案交叉的栅极电极，栅电极两侧的有源图案中的第一杂质区域和第二杂质区域，位线 跨越栅电极，将第一杂质区与位线电连接的第一接触和第一接触的下侧表面上的第一氮化物图案。 垂直于位线的延伸方向测量的第一接触件的宽度可以基本上等于位线的宽度。

公开(公告)号：US20250153122A1

公开(公告)日：2025-05-15

申请号：US18741245

申请日：2024-06-12

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： SUNGHYUN PARK ,  Minsuk KANG ,  Young-Hoo KIM ,  Jinseon YOU ,  Tae-Hong KIM ,  Woogwan SHIM

IPC: B01F35/221 ,  B01F35/21 ,  B01F35/90 ,  B01F35/92 ,  B01F101/58 ,  H01L21/67

Abstract: A chemical liquid exchange method includes: recovering, by a first recycling tank, a first portion of a first chemical liquid that was previously used in a chamber; recovering, by a second recycling tank, a second portion of the first chemical liquid that was previously used in the chamber; supplying, from the first recycling tank, the first portion of the first chemical liquid to a first sub-tank; draining, from the second recycling tank, the second portion of the first chemical liquid; supplying, from the first sub-tank, the first portion of the first chemical liquid to a main tank; and receiving, by a second sub-tank, a second chemical liquid from an outside; and supplying, from the second sub-tank, the second chemical liquid to the main tank.