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Patent Agency Ranking
公开(公告)号：US20220254422A1
公开(公告)日：2022-08-11
申请号：US17729048
申请日：2022-04-26
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Sangsoo Cha , Suyong Jang
Abstract: A method of operating a storage device including a non-volatile memory includes storing program and erase counts of the non-volatile memory as metadata in units of super blocks, wherein each of the super blocks includes a pre-defined number of blocks of the non-volatile memory, performing a read operation on a first block included in a first super block based on a first read level, storing the first read level as a history read level of the first super block in a history buffer when the read operation on the first block is successful, receiving a read request for a second block of the first super block and an address of the second block from a host, and performing a read operation on the second block based on the history read level stored in the history buffer. The pre-defined number is at least two.
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公开(公告)号：US11335423B2
公开(公告)日：2022-05-17
申请号：US17038416
申请日：2020-09-30
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Sangsoo Cha , Suyong Jang
Abstract: A method of operating a storage device including a non-volatile memory includes storing program and erase counts of the non-volatile memory as metadata in units of super blocks, wherein each of the super blocks includes a pre-defined number of blocks of the non-volatile memory, performing a read operation on a first block included in a first super block based on a first read level, storing the first read level as a history read level of the first super block in a history buffer when the read operation on the first block is successful, receiving a read request for a second block of the first super block and an address of the second block from a host, and performing a read operation on the second block based on the history read level stored in the history buffer. The pre-defined number is at least two.
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公开(公告)号：US20250014658A1
公开(公告)日：2025-01-09
申请号：US18598988
申请日：2024-03-07
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Youhwan Kim , Kyungduk Lee , Suyong Jang , Hankyu Ko , Ho-Sung Ahn
Abstract: The present disclosure relates to storage devices. An example storage device includes a nonvolatile memory device that includes a plurality of memory blocks, and a memory controller that controls the nonvolatile memory device. The memory controller performs a soft erase operation on a first memory block among the plurality of memory blocks, measures a first cell count by applying a first reference voltage to a plurality of first memory cells selected in advance from a plurality of memory cells of the first memory block after performing the soft erase operation, generates a first health index associated with a retention characteristic of the first memory block based on the first cell count, and performs a reliability management operation on the first memory block based on the first health index.
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公开(公告)号：US11862263B2
公开(公告)日：2024-01-02
申请号：US17729048
申请日：2022-04-26
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Sangsoo Cha , Suyong Jang
CPC classification number: G11C16/3495 , G11C16/16 , G11C16/26 , G11C29/72
Abstract: A method of operating a storage device including a non-volatile memory includes storing program and erase counts of the non-volatile memory as metadata in units of super blocks, wherein each of the super blocks includes a pre-defined number of blocks of the non-volatile memory, performing a read operation on a first block included in a first super block based on a first read level, storing the first read level as a history read level of the first super block in a history buffer when the read operation on the first block is successful, receiving a read request for a second block of the first super block and an address of the second block from a host, and performing a read operation on the second block based on the history read level stored in the history buffer. The pre-defined number is at least two.
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公开(公告)号：US20210166774A1
公开(公告)日：2021-06-03
申请号：US17038416
申请日：2020-09-30
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Sangsoo Cha , Suyong Jang
Abstract: A method of operating a storage device including a non-volatile memory includes storing program and erase counts of the non-volatile memory as metadata in units of super blocks, wherein each of the super blocks includes a pre-defined number of blocks of the non-volatile memory, performing a read operation on a first block included in a first super block based on a first read level, storing the first read level as a history read level of the first super block in a history buffer when the read operation on the first block is successful, receiving a read request for a second block of the first super block and an address of the second block from a host, and performing a read operation on the second block based on the history read level stored in the history buffer. The pre-defined number is at least two.
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