公开(公告)号：US20250014658A1

公开(公告)日：2025-01-09

申请号：US18598988

申请日：2024-03-07

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Youhwan Kim ,  Kyungduk Lee ,  Suyong Jang ,  Hankyu Ko ,  Ho-Sung Ahn

IPC: G11C16/34 ,  G11C16/10 ,  G11C16/16 ,  G11C16/28

Abstract: The present disclosure relates to storage devices. An example storage device includes a nonvolatile memory device that includes a plurality of memory blocks, and a memory controller that controls the nonvolatile memory device. The memory controller performs a soft erase operation on a first memory block among the plurality of memory blocks, measures a first cell count by applying a first reference voltage to a plurality of first memory cells selected in advance from a plurality of memory cells of the first memory block after performing the soft erase operation, generates a first health index associated with a retention characteristic of the first memory block based on the first cell count, and performs a reliability management operation on the first memory block based on the first health index.