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7 条记录 (耗时 0.019 秒)

    Scanner and image forming apparatus having the same that reduces the tilting of a moving unit
    1.
    发明授权
    Scanner and image forming apparatus having the same that reduces the tilting of a moving unit 有权
    具有减少移动单元的倾斜的扫描器和图像形成装置

    公开(公告)号：US09036218B2

    公开(公告)日：2015-05-19

    申请号：US13972191

    申请日：2013-08-21

    申请人： SAMSUNG ELECTRONICS CO., LTD.

    发明人： Seung-jae Lee

    IPC分类号： H04N1/04 ,  H04N1/46 ,  F16H19/04 ,  H04N1/10

    CPC分类号： F16H19/04 ,  H04N1/1017 ,  H04N1/1021

    摘要： Disclosed are a scanner and an image forming apparatus including the same. The scanner may include a scanner unit; a support unit configured to support the scanning unit; a first pinion rotatably disposed on the support unit and configured to move along a first rack of a first surface of a guide member; and a second pinion rotatably disposed on the support unit and configured to move along a second rack of a second surface of the guide member such that the direction of rotation of the second pinion is opposite to the direction of rotation of the first pinion, the second surface of the guide member being different from the first surface of the guide member.

    摘要翻译： 公开了一种扫描器和包括该扫描仪的图像形成装置。 扫描器可以包括扫描器单元; 支撑单元，被配置为支撑扫描单元; 第一小齿轮，其可旋转地设置在所述支撑单元上并且构造成沿着引导构件的第一表面的第一齿条移动; 以及第二小齿轮，其可旋转地设置在所述支撑单元上并且构造成沿着所述引导构件的第二表面的第二齿条移动，使得所述第二小齿轮的旋转方向与所述第一小齿轮的旋转方向相反， 引导构件的表面与引导构件的第一表面不同。

    Program method of memory device and memory system using the same
    2.
    发明授权
    Program method of memory device and memory system using the same 有权

    公开(公告)号：US10163513B2

    公开(公告)日：2018-12-25

    申请号：US15425315

    申请日：2017-02-06

    申请人： Samsung Electronics Co., Ltd.

    发明人： Il-han Park ,  Seung-jae Lee

    IPC分类号： G11C16/08 ,  G11C16/10 ,  G11C16/04 ,  G11C16/34

    摘要： A program method of a memory device include determining whether valid data is stored in memory cells of a word line adjacent to a selection word line upon which a program operation is to be performed; when the valid data is not stored in the memory cells of the word line adjacent to the selection word line, performing, based on data to be written to the selection word line, a pre-program operation on the word line adjacent to the selection word line; and after the performing of the pre-program operation, performing, based on a program command, the program operation on the selection word line.

    Memory device having vertical structure
    6.
    发明授权
    Memory device having vertical structure 有权

    公开(公告)号：US10937788B2

    公开(公告)日：2021-03-02

    申请号：US16809913

    申请日：2020-03-05

    申请人： SAMSUNG ELECTRONICS CO., LTD.

    发明人： Nam-Gun Kim ,  Sang-min Lee ,  Tae-Seop Choi ,  Kon Ha ,  Seung-jae Lee

    IPC分类号： H01L27/108 ,  H01L21/768 ,  H01L23/522 ,  H01L23/528 ,  H01L23/532

    摘要： A semiconductor device includes a substrate with an active region, a plurality of conductive line structures on the substrate, an insulating layer separating the plurality of conductive line structures from the substrate, a contact plug between every two adjacent conductive line structures, an insulating spacer structure between each conductive line structure and a corresponding contact plug, a landing pad connected to each contact plug, and a landing pad insulation pattern having an asymmetrical shape based on a vertical axis of the landing pad that extends along a normal to the substrate. The landing pad insulation pattern includes a first portion overlapping the conductive line structures and a second portion overlapping the contact plug, the first and second portions being on opposite sides of the vertical axis.

    Memory device having vertical structure
    7.
    发明授权
    Memory device having vertical structure 有权

    公开(公告)号：US10224332B2

    公开(公告)日：2019-03-05

    申请号：US15598570

    申请日：2017-05-18

    申请人： SAMSUNG ELECTRONICS CO., LTD.

    发明人： Nam-gun Kim ,  Sang-min Lee ,  Tae-seop Choi ,  Kon Ha ,  Seung-jae Lee

    IPC分类号： H01L27/108 ,  H01L21/768 ,  H01L23/522 ,  H01L23/528 ,  H01L23/532

    摘要： A semiconductor device includes a substrate with an active region, a plurality of conductive line structures on the substrate, an insulating layer separating the plurality of conductive line structures from the substrate, a contact plug between every two adjacent conductive line structures, an insulating spacer structure between each conductive line structure and a corresponding contact plug, a landing pad connected to each contact plug, and a landing pad insulation pattern having an asymmetrical shape based on a vertical axis of the landing pad that extends along a normal to the substrate. The landing pad insulation pattern includes a first portion overlapping the conductive line structures and a second portion overlapping the contact plug, the first and second portions being on opposite sides of the vertical axis.