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    IMAGE SENSOR
    1.
    发明申请
    IMAGE SENSOR 有权

    公开(公告)号：US20230122003A1

    公开(公告)日：2023-04-20

    申请号：US18145460

    申请日：2022-12-22

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Jaekyu LEE ,  Heesung SHIM

    IPC: H04N25/531 ,  H01L27/146 ,  H04N25/75

    Abstract: An image sensor is disclosed. The image sensor includes a plurality of pixels arranged in a plurality of rows and a plurality of columns, each of the pixels including: a photodiode; a floating diffusion node configured to accumulate photocharges generated from the photodiode; a first capacitor configured to store charges according to a voltage of the floating diffusion node which is reset; a second capacitor configured to store charges according to a voltage of the floating diffusion node in which the photocharges are accumulated; a first sampling transistor connected to a first output node and configured to sample charges to the first capacitor; a second sampling transistor connected to the first output node and configured to sample charges to the second capacitor; and at least one precharge select transistor connected to the first output node and configured to reset the first output node.

    IMAGE SENSOR
    2.
    发明申请
    IMAGE SENSOR 有权

    公开(公告)号：US20220094864A1

    公开(公告)日：2022-03-24

    申请号：US17476220

    申请日：2021-09-15

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Jaekyu LEE ,  Heesung SHIM

    IPC: H04N5/353 ,  H04N5/378 ,  H01L27/146

    Abstract: An image sensor is disclosed. The image sensor includes a plurality of pixels arranged in a plurality of rows and a plurality of columns, each of the pixels including: a photodiode; a floating diffusion node configured to accumulate photocharges generated from the photodiode; a first capacitor configured to store charges according to a voltage of the floating diffusion node which is reset; a second capacitor configured to store charges according to a voltage of the floating diffusion node in which the photocharges are accumulated; a first sampling transistor connected to a first output node and configured to sample charges to the first capacitor; a second sampling transistor connected to the first output node and configured to sample charges to the second capacitor; and at least one precharge select transistor connected to the first output node and configured to reset the first output node.

    IMAGE SENSOR
    3.
    发明申请
    IMAGE SENSOR 有权

    公开(公告)号：US20250097594A1

    公开(公告)日：2025-03-20

    申请号：US18468424

    申请日：2023-09-15

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Jaekyu LEE ,  Heesung SHIM

    IPC: H04N25/531 ,  H01L27/146 ,  H04N25/533 ,  H04N25/75

    Abstract: An image sensor is disclosed. The image sensor includes a plurality of pixels arranged in a plurality of rows and a plurality of columns, each of the pixels including: a photodiode; a floating diffusion node configured to accumulate photocharges generated from the photodiode; a first capacitor configured to store charges according to a voltage of the floating diffusion node which is reset; a second capacitor configured to store charges according to a voltage of the floating diffusion node in which the photocharges are accumulated; a first sampling transistor connected to a first output node and configured to sample charges to the first capacitor; a second sampling transistor connected to the first output node and configured to sample charges to the second capacitor; and at least one precharge select transistor connected to the first output node and configured to reset the first output node.

    IMAGE SENSOR, AN IMAGING DEVICE AND A METHOD OF OPERATING THE SAME
    4.
    发明申请
    IMAGE SENSOR, AN IMAGING DEVICE AND A METHOD OF OPERATING THE SAME 有权

    公开(公告)号：US20230007192A1

    公开(公告)日：2023-01-05

    申请号：US17577566

    申请日：2022-01-18

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Jaekyu LEE

    IPC: H04N5/353 ,  H04N5/3745 ,  H04N5/378

    Abstract: An image sensor including: first and second capacitors; a first transistor between a photodiode and a floating diffusion node, and receiving a transfer signal; a second transistor between a first power terminal and the floating diffusion node and receiving a reset signal; a third transistor between a second power terminal and a first node and having a gate connected to the floating diffusion node; a fourth transistor between the first node and a column line and receiving a precharge signal; a fifth transistor between the first capacitor and a feedback node and receiving a first sampling signal; a sixth transistor between the second capacitor and feedback node and receiving a second sampling signal; a seventh transistor between the first node and feedback node and receiving a first switch signal; and an eighth transistor between the floating diffusion and feedback nodes and receiving a second switch signal.

    PIXEL ARRAY AND IMAGE SENSOR INCLUDING THE SAME
    6.
    发明申请
    PIXEL ARRAY AND IMAGE SENSOR INCLUDING THE SAME 有权

    公开(公告)号：US20210152772A1

    公开(公告)日：2021-05-20

    申请号：US16996264

    申请日：2020-08-18

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Myunglae CHU ,  Sungyong KIM ,  Seoksan KIM ,  Minwoong SEO ,  Jaekyu LEE ,  Jongyeon LEE ,  Junan LEE

    IPC: H04N5/3745 ,  H04N5/378

    Abstract: Provided are a pixel array and an image sensor. The pixel array includes a plurality of pixels, which are arranged in a matrix form and which convert an optical signal into an electrical signal. The pixel array includes a first pixel arranged in a first row of the pixel array and a second pixel arranged in a second row of the pixel array, wherein each of the first pixel and the second pixel includes a first memory storing a digital reset value according to internal noise, the first memory of the first pixel stores m-bit data (where m is a natural number equal to or greater than 2), and the first memory of the second pixel stores n-bit data (where n is a natural number less than m).

    IMAGE SENSOR INCLUDING DIGITAL PIXEL
    9.
    发明申请
    IMAGE SENSOR INCLUDING DIGITAL PIXEL 审中-公开

    公开(公告)号：US20200260043A1

    公开(公告)日：2020-08-13

    申请号：US16599787

    申请日：2019-10-11

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Min-Woong SEO ,  Jaekyu LEE

    IPC: H04N5/3745 ,  H04N5/351 ,  H04N5/378

    Abstract: An image sensor includes a plurality of pixels. Each of the plurality of pixels includes a photodetector that includes a photoelectric conversion element that outputs a detection signal in response to light incident thereon, a comparator that compares the detection signal of the photodetector with a ramp signal and outputs a comparison signal in response thereto, a plurality of first memory cells that store a first counting value corresponding to a first voltage level of the detection signal using the comparison signal of the comparator and output the first counting value through a plurality of transmission lines, and a plurality of second memory cells that store a second counting value corresponding to a second voltage level of the detection signal using the comparison signal of the comparator and output the second counting value through the plurality of transmission lines.

    SEMICONDUCTOR DEVICES INCLUDING FIELD EFFECT TRANSISTORS
    10.
    发明申请
    SEMICONDUCTOR DEVICES INCLUDING FIELD EFFECT TRANSISTORS 审中-公开

    公开(公告)号：US20170194425A1

    公开(公告)日：2017-07-06

    申请号：US15343569

    申请日：2016-11-04

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Jaekyu LEE

    IPC: H01L29/06 ,  H01L27/088 ,  H01L29/423 ,  H01L27/092

    CPC classification number: H01L29/0649 ,  H01L21/28123 ,  H01L21/82345 ,  H01L27/088 ,  H01L27/0883 ,  H01L27/092 ,  H01L29/42364 ,  H01L29/66575

    Abstract: A semiconductor device includes device isolation layer on a substrate to define an active region, a first gate electrode on the active region extending in a first direction parallel to a top surface of the substrate, a second gate electrode on the device isolation layer and spaced apart from the first gate electrode in the first direction, a gate spacer between the first gate electrode and the second gate electrode, and source/drain regions in the active region at opposite sides of the first gate electrode. The source/drain regions are spaced apart from each other in a second direction that is parallel to the top surface of the substrate and crossing the first direction, and, when viewed in a plan view, the first gate electrode is spaced apart from a boundary between the active region and the device isolation layer.

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