公开(公告)号：US20180069117A1

公开(公告)日：2018-03-08

申请号：US15672767

申请日：2017-08-09

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Wooyeong CHO ,  Jaekyu LEE

IPC: H01L29/78 ,  H01L27/108

CPC classification number: H01L29/7827 ,  H01L27/10814 ,  H01L27/10876 ,  H01L27/10885 ,  H01L27/10891

Abstract: A semiconductor device includes an active pillar that protrudes above a substrate, the active pillar including a pair of vertical sections and a body interconnection between the pair of vertical sections, and each of the pair of vertical sections having a channel body and a lower impurity region below the channel body, word lines coupled to respective channel bodies, and buried bit lines in contact with respective lower impurity regions, wherein the channel bodies are connected to the substrate through the body interconnection.