公开(公告)号：US20250097594A1

公开(公告)日：2025-03-20

申请号：US18468424

申请日：2023-09-15

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jaekyu LEE ,  Heesung SHIM

IPC: H04N25/531 ,  H01L27/146 ,  H04N25/533 ,  H04N25/75

Abstract: An image sensor is disclosed. The image sensor includes a plurality of pixels arranged in a plurality of rows and a plurality of columns, each of the pixels including: a photodiode; a floating diffusion node configured to accumulate photocharges generated from the photodiode; a first capacitor configured to store charges according to a voltage of the floating diffusion node which is reset; a second capacitor configured to store charges according to a voltage of the floating diffusion node in which the photocharges are accumulated; a first sampling transistor connected to a first output node and configured to sample charges to the first capacitor; a second sampling transistor connected to the first output node and configured to sample charges to the second capacitor; and at least one precharge select transistor connected to the first output node and configured to reset the first output node.

公开(公告)号：US20240205556A1

公开(公告)日：2024-06-20

申请号：US18534208

申请日：2023-12-08

Applicant: Samsung Electronics Co., Ltd.

Inventor： Heesung SHIM ,  Jaekyu LEE ,  Seungsik KIM ,  Ingyu BAEK

IPC: H04N25/51 ,  H04N25/42 ,  H04N25/59 ,  H04N25/616 ,  H04N25/771 ,  H04N25/778 ,  H04N25/78

CPC classification number: H04N25/51 ,  H04N25/42 ,  H04N25/59 ,  H04N25/616 ,  H04N25/771 ,  H04N25/778 ,  H04N25/78 ,  H04N25/7795

Abstract: An image sensor according to some example embodiments of the present inventive concepts may operate in a global shutter mode, and each pixel circuit may support a high conversion gain (HCG) mode and a low conversion gain (LCG) mode so as to have high dynamic range (HDR). Accordingly, the image sensor according to some example embodiments of the present inventive concepts may have HDR and may generate a high-quality image.

公开(公告)号：US20230122003A1

公开(公告)日：2023-04-20

申请号：US18145460

申请日：2022-12-22

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jaekyu LEE ,  Heesung SHIM

IPC: H04N25/531 ,  H01L27/146 ,  H04N25/75

Abstract: An image sensor is disclosed. The image sensor includes a plurality of pixels arranged in a plurality of rows and a plurality of columns, each of the pixels including: a photodiode; a floating diffusion node configured to accumulate photocharges generated from the photodiode; a first capacitor configured to store charges according to a voltage of the floating diffusion node which is reset; a second capacitor configured to store charges according to a voltage of the floating diffusion node in which the photocharges are accumulated; a first sampling transistor connected to a first output node and configured to sample charges to the first capacitor; a second sampling transistor connected to the first output node and configured to sample charges to the second capacitor; and at least one precharge select transistor connected to the first output node and configured to reset the first output node.

公开(公告)号：US20220094864A1

公开(公告)日：2022-03-24

申请号：US17476220

申请日：2021-09-15

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jaekyu LEE ,  Heesung SHIM

IPC: H04N5/353 ,  H04N5/378 ,  H01L27/146

Abstract: An image sensor is disclosed. The image sensor includes a plurality of pixels arranged in a plurality of rows and a plurality of columns, each of the pixels including: a photodiode; a floating diffusion node configured to accumulate photocharges generated from the photodiode; a first capacitor configured to store charges according to a voltage of the floating diffusion node which is reset; a second capacitor configured to store charges according to a voltage of the floating diffusion node in which the photocharges are accumulated; a first sampling transistor connected to a first output node and configured to sample charges to the first capacitor; a second sampling transistor connected to the first output node and configured to sample charges to the second capacitor; and at least one precharge select transistor connected to the first output node and configured to reset the first output node.

公开(公告)号：US20220070400A1

公开(公告)日：2022-03-03

申请号：US17396320

申请日：2021-08-06

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Heesung SHIM ,  Sangyoon KIM ,  Joosung MOON

IPC: H04N5/378 ,  H04N5/355 ,  H04N5/3745 ,  H01L27/146 ,  H01L27/148

Abstract: An image sensor is provided. The image sensor includes a pixel array in which a plurality of pixels are arranged, wherein each of the plurality of pixels includes a photodiode; a floating diffusion node configured to integrate photocharges generated in the photodiode; a first sampling transistor electrically connected to a first node; a first capacitor electrically connected to a first node and configured to store a charge corresponding to a voltage of the floating diffusion node which is reset; a second sampling transistor electrically connected to a second node; a second capacitor electrically connected to the second node and configured to store a charge corresponding to a voltage of the floating diffusion node in which the photocharges are integrated; and at least one mode transistor configured to adjust an equivalent capacitance of each of the first node and the second node according to a mode control signal.