Abstract:
A semiconductor package and method of manufacture are provided. The semiconductor package may include a package substrate, a semiconductor chip, a molding member and a grounding member. The package substrate may include a ground pad and a signal pad. The semiconductor chip may be arranged on an upper surface of the package substrate. The semiconductor chip may be electrically connected with the signal pad of the package substrate. The molding member may be formed on the upper surface of the package substrate to cover the semiconductor chip. The grounding member may be arranged on a surface of the molding member. The grounding member may be electrically connected with the ground pad.
Abstract:
The semiconductor package includes: a package substrate comprising a bonding pad; a plurality of semiconductor chips stacked on the package substrate; and a bonding wire configured to electrically connect the semiconductor chips and the bonding pad. For at least one of the plurality of semiconductor chips: the semiconductor chip comprises: a semiconductor device; a first pad electrically connected to the semiconductor device; a conductive pattern; and a second pad electrically connected to the first pad, spaced apart from the conductive pattern, and extending over the conductive pattern; and the bonding wire is connected to the second pad.
Abstract:
A method of fabricating a multi-band filter module is provided. The method includes forming a Film Bulk Acoustic Resonator (FBAR) on a piezoelectric substrate by forming a resonant part on the piezoelectric substrate and then an air gap recessed on a surface of the piezoelectric substrate and positioned under the resonant part; and forming a Surface Acoustic Wave (SAW) device on the piezoelectric substrate in which the steps of forming the FBAR and the SAW are concurrently performed.