公开(公告)号：US09536946B2

公开(公告)日：2017-01-03

申请号：US14833983

申请日：2015-08-24

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jae-Ho Park ,  Taejoong Song ,  Sanghoon Baek ,  Jintae Kim ,  Giyoung Yang ,  Hyosig Won

IPC: H01L27/088 ,  H01L29/06 ,  H01L29/08 ,  H01L29/417 ,  H01L27/02 ,  H01L27/092 ,  H01L21/8238

CPC classification number: H01L29/0642 ,  H01L21/768 ,  H01L21/76816 ,  H01L21/823871 ,  H01L27/0207 ,  H01L27/092 ,  H01L27/0924 ,  H01L29/0847 ,  H01L29/41758 ,  H01L29/41791

Abstract: A semiconductor device includes a substrate having an active region, a gate structure intersecting the active region and extending in a first direction parallel to a top surface of the substrate, a first source/drain region and a second source/drain region disposed in the active region at both sides of the gate structure, respectively, and a first modified contact and a second modified contact in contact with the first source/drain region and the second source/drain region, respectively. The distance between the gate structure and the first modified contact is smaller than the distance between the gate structure and the second modified contact.

Abstract translation: 半导体器件包括具有有源区的衬底，与有源区相交且在平行于衬底顶表面的第一方向上延伸的栅极结构，设置在有源区中的第一源极/漏极区和第二源极/漏极区 分别与第一源极/漏极区域和第二源极/漏极区域接触的第一修改触点和第二修改触点。 栅极结构和第一改性接触之间的距离小于栅极结构和第二改性接触之间的距离。

公开(公告)号：US09496179B2

公开(公告)日：2016-11-15

申请号：US14833922

申请日：2015-08-24

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jung-Ho Do ,  Sanghoon Baek ,  Sunyoung Park ,  Sang-Kyu Oh ,  Jintae Kim ,  Hyosig Won

IPC: H01L21/768 ,  H01L21/8234 ,  H01L21/027 ,  H01L21/321

CPC classification number: H01L21/823475 ,  H01L21/0274 ,  H01L21/28008 ,  H01L21/32115 ,  H01L21/76802 ,  H01L21/76816 ,  H01L21/76877 ,  H01L21/76895 ,  H01L21/76897 ,  H01L21/823418 ,  H01L21/823431 ,  H01L21/823437 ,  H01L29/41758 ,  H01L29/66568

Abstract: A method of manufacturing a semiconductor device includes forming an active pattern and a gate electrode crossing the active pattern on a substrate, forming a first contact connected to the active pattern at a side of the gate electrode, forming a second contact connected to the gate electrode, and forming a third contact connected to the first contact at the side of the gate electrode. The third contact is formed using a photomask different from that used to form the first contact. A bottom surface of the third contact is disposed at a level in the device lower than the level of a top surface of the first contact.

Abstract translation: 一种制造半导体器件的方法包括：在基板上形成与有源图案交叉的有源图案和栅电极，在栅电极侧形成连接到有源图案的第一触点，形成连接到栅电极的第二触点 并且形成在栅电极侧与第一接触连接的第三触点。 使用不同于用于形成第一接触的光掩模形成第三接触。 第三触点的底表面设置在低于第一触点的顶表面的高度的装置中的水平面上。

公开(公告)号：US10509884B2

公开(公告)日：2019-12-17

申请号：US16284318

申请日：2019-02-25

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hyosig Won ,  ChungHee Kim

IPC: G06F17/50

Abstract: Generating a routing between pins of a semiconductor device may include selecting one or more of candidate pins of the semiconductor device, generating a net list associated with the selected pins generating an interface script to execute the net list in a library-based disposition and wiring tool that is driven in a computer system, and executing the interface script through the library-based disposition. Pins may be selected from the candidate pins based on at least one of density, shapes, intervals, and sizes among the candidate pins. The net list may define a set of electrical connections between the selected pins.

公开(公告)号：US20190188354A1

公开(公告)日：2019-06-20

申请号：US16284318

申请日：2019-02-25

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hyosig Won ,  ChungHee Kim

IPC: G06F17/50

CPC classification number: G06F17/5077 ,  G06F17/5081

Abstract: Generating a routing between pins of a semiconductor device may include selecting one or more of candidate pins of the semiconductor device, generating a net list associated with the selected pins generating an interface script to execute the net list in a library-based disposition and wiring tool that is driven in a computer system, and executing the interface script through the library-based disposition. Pins may be selected from the candidate pins based on at least one of density, shapes, intervals, and sizes among the candidate pins. The net list may define a set of electrical connections between the selected pins.

公开(公告)号：US10248752B2

公开(公告)日：2019-04-02

申请号：US15400333

申请日：2017-01-06

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hyosig Won ,  ChungHee Kim

IPC: G06F17/50

Abstract: Generating a routing between pins of a semiconductor device may include selecting one or more of candidate pins of the semiconductor device, generating a net list associated with the selected pins generating an interface script to execute the net list in a library-based disposition and wiring tool that is driven in a computer system, and executing the interface script through the library-based disposition. Pins may be selected from the candidate pins based on at least one of density, shapes, intervals, and sizes among the candidate pins. The net list may define a set of electrical connections between the selected pins.

公开(公告)号：US09459680B2

公开(公告)日：2016-10-04

申请号：US13948691

申请日：2013-07-23

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Hyungock Kim ,  Wook Kim ,  Jun Seomun ,  Chungki Oh ,  JaeHan Jeon ,  Kyungtae Do ,  JungYun Choi ,  Hyosig Won ,  Kee Sup Kim

IPC: G06F1/32 ,  G05D23/19 ,  G06F1/20

CPC classification number: G06F1/3206 ,  G05D23/1919 ,  G06F1/20 ,  G06F1/324 ,  Y02D10/126

Abstract: A temperature control method of a semiconductor device is provided. The temperature control method includes detecting a temperature of the semiconductor device; activating a reverse body biasing operation in which a body bias voltage applied to a function block of the semiconductor device is regulated, when the detected temperature is greater than a first temperature level; and activating a thermal throttling operation in which at least one of a frequency of a driving clock provided to a function block of the semiconductor device and a driving voltage applied to the function block of the semiconductor device is regulated, when the detected temperature is greater than a second temperature level that is different than the first temperature level.

Abstract translation: 提供了一种半导体器件的温度控制方法。 温度控制方法包括检测半导体器件的温度; 当检测到的温度大于第一温度水平时，激活施加到半导体器件的功能块的体偏置电压的反向体偏置操作; 以及激活热调节操作，其中当检测到的温度大于所述热节流操作时，提供给所述半导体器件的功能块的驱动时钟的频率中的至少一个和施加到所述半导体器件的功能块的驱动电压被调节 与第一温度水平不同的第二温度水平。