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    Semiconductor device having stacked semiconductor chips and method for fabricating the same
    1.
    发明授权
    Semiconductor device having stacked semiconductor chips and method for fabricating the same 有权

    公开(公告)号：US10354985B2

    公开(公告)日：2019-07-16

    申请号：US15438184

    申请日：2017-02-21

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Won-Gi Chang ,  Dongwon Lee ,  Myung-Sung Kang ,  Hyein Yoo

    IPC: H01L21/56 ,  H01L25/00 ,  H01L21/78 ,  H01L23/00 ,  H01L25/065

    Abstract: A method for manufacturing a semiconductor device includes stacking, on a package substrate, first semiconductor chips. Each of the first semiconductor chips includes a first adhesive film. The method includes stacking, respectively on the first semiconductor chips, second semiconductor chips. Each of the second semiconductor chips includes a second adhesive film. The method includes compressing the first and second adhesive films to form an adhesive structure. The adhesive structure includes an extension disposed on sidewalls of the first and second semiconductor chips. The method includes removing the extension. The method includes forming a first molding layer substantially covering the first and second semiconductor chips. The method includes performing a cutting process on the package substrate between the first and second semiconductor chips to form a plurality of semiconductor packages each including at least one of the first semiconductor chips and at least one of the second semiconductor chips.

    SEMICONDUCTOR DEVICE HAVING STACKED SEMICONDUCTOR CHIPS AND METHOD FOR FABRICATING THE SAME
    3.
    发明申请
    SEMICONDUCTOR DEVICE HAVING STACKED SEMICONDUCTOR CHIPS AND METHOD FOR FABRICATING THE SAME 审中-公开

    公开(公告)号：US20190273075A1

    公开(公告)日：2019-09-05

    申请号：US16417934

    申请日：2019-05-21

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Won-Gi Chang ,  Dongwon Lee ,  Myung-Sung Kang ,  Hyein Yoo

    IPC: H01L25/00 ,  H01L25/065 ,  H01L23/00 ,  H01L21/78 ,  H01L21/56

    Abstract: A method for manufacturing a semiconductor device includes stacking, on a package substrate, first semiconductor chips. Each of the first semiconductor chips includes a first adhesive film. The method includes stacking, respectively on the first semiconductor chips, second semiconductor chips. Each of the second semiconductor chips includes a second adhesive film. The method includes compressing the first and second adhesive films to form an adhesive structure. The adhesive structure includes an extension disposed on sidewalls of the first and second semiconductor chips. The method includes removing the extension. The method includes forming a first molding layer substantially covering the first and second semiconductor chips. The method includes performing a cutting process on the package substrate between the first and second semiconductor chips to form a plurality of semiconductor packages each including at least one of the first semiconductor chips and at least one of the second semiconductor chips.

    Semiconductor package having mold layer with curved corner and method of fabricating same
    4.
    发明授权
    Semiconductor package having mold layer with curved corner and method of fabricating same 有权

    公开(公告)号：US10147713B2

    公开(公告)日：2018-12-04

    申请号：US15889957

    申请日：2018-02-06

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Hyein Yoo ,  Yeongseok Kim

    IPC: H01L25/00 ,  H01L21/56 ,  H01L21/78 ,  H01L23/31 ,  H01L25/065 ,  H01L23/552

    Abstract: A method of fabricating a semiconductor package includes mounting a plurality of semiconductor chips on a substrate in a stripped state, forming a mold layer to cover the semiconductor chips, cutting the mold layer and the substrate to form unit packages separated from each other, and forming a shielding layer on the mold layer of each of the unit packages, wherein each of the unit packages includes a corresponding one of the semiconductor chips, wherein the mold layer in each of the unit packages includes side surfaces, a top surface, and corner regions, and wherein each of the corner regions of the mold layer includes a first corner, which is connected to a corresponding one of the side surfaces and has a first curvature radius, and a second corner, which is connected to the top surface and has a second curvature radius smaller than the first curvature radius.

    Semiconductor device having stacked semiconductor chips and method for fabricating the same
    6.
    发明授权
    Semiconductor device having stacked semiconductor chips and method for fabricating the same 有权

    公开(公告)号：US10923465B2

    公开(公告)日：2021-02-16

    申请号：US16417934

    申请日：2019-05-21

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Won-Gi Chang ,  Dongwon Lee ,  Myung-Sung Kang ,  Hyein Yoo

    IPC: H01L25/00 ,  H01L21/683 ,  H01L21/56 ,  H01L23/31 ,  H01L23/00 ,  H01L21/78 ,  H01L25/065

    Abstract: A method for manufacturing a semiconductor device includes stacking, on a package substrate, first semiconductor chips. Each of the first semiconductor chips includes a first adhesive film. The method includes stacking, respectively on the first semiconductor chips, second semiconductor chips. Each of the second semiconductor chips includes a second adhesive film. The method includes compressing the first and second adhesive films to form an adhesive structure. The adhesive structure includes an extension disposed on sidewalls of the first and second semiconductor chips. The method includes removing the extension. The method includes forming a first molding layer substantially covering the first and second semiconductor chips. The method includes performing a cutting process on the package substrate between the first and second semiconductor chips to form a plurality of semiconductor packages each including at least one of the first semiconductor chips and at least one of the second semiconductor chips.

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