公开(公告)号：US20240422966A1

公开(公告)日：2024-12-19

申请号：US18736748

申请日：2024-06-07

Applicant: Samsung Electronics Co., Ltd.

Inventor： Yanghee Lee ,  Jonghyuk Park ,  Hyesung Park ,  Seungji Kang ,  Seongeun Kim ,  Dongwon Lee ,  Juyeon Han

IPC: H10B12/00 ,  H01L23/528

Abstract: An integrated circuit device includes a substrate having a memory cell area and a peripheral circuit area extending around the memory cell area, cell transistors in the memory cell area, and a peripheral circuit transistor in the peripheral circuit area. The device further includes: a capacitor structure including lower electrodes on the cell transistors, a dielectric layer on a surface of the lower electrodes, an upper material layer on the dielectric layer, and a metal plate layer on the upper material layer; an interlayer insulating layer on the metal plate layer in the memory cell area and on the peripheral circuit transistor in the peripheral circuit area; and an etch stop pattern in the interlayer insulating layer at a boundary portion of the memory cell area and the peripheral circuit area. The etch stop pattern is spaced laterally from a sidewall of the metal plate layer and extends vertically.

公开(公告)号：US20190273075A1

公开(公告)日：2019-09-05

申请号：US16417934

申请日：2019-05-21

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Won-Gi Chang ,  Dongwon Lee ,  Myung-Sung Kang ,  Hyein Yoo

IPC: H01L25/00 ,  H01L25/065 ,  H01L23/00 ,  H01L21/78 ,  H01L21/56

Abstract: A method for manufacturing a semiconductor device includes stacking, on a package substrate, first semiconductor chips. Each of the first semiconductor chips includes a first adhesive film. The method includes stacking, respectively on the first semiconductor chips, second semiconductor chips. Each of the second semiconductor chips includes a second adhesive film. The method includes compressing the first and second adhesive films to form an adhesive structure. The adhesive structure includes an extension disposed on sidewalls of the first and second semiconductor chips. The method includes removing the extension. The method includes forming a first molding layer substantially covering the first and second semiconductor chips. The method includes performing a cutting process on the package substrate between the first and second semiconductor chips to form a plurality of semiconductor packages each including at least one of the first semiconductor chips and at least one of the second semiconductor chips.

公开(公告)号：US10923465B2

公开(公告)日：2021-02-16

申请号：US16417934

申请日：2019-05-21

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Won-Gi Chang ,  Dongwon Lee ,  Myung-Sung Kang ,  Hyein Yoo

IPC: H01L25/00 ,  H01L21/683 ,  H01L21/56 ,  H01L23/31 ,  H01L23/00 ,  H01L21/78 ,  H01L25/065

Abstract: A method for manufacturing a semiconductor device includes stacking, on a package substrate, first semiconductor chips. Each of the first semiconductor chips includes a first adhesive film. The method includes stacking, respectively on the first semiconductor chips, second semiconductor chips. Each of the second semiconductor chips includes a second adhesive film. The method includes compressing the first and second adhesive films to form an adhesive structure. The adhesive structure includes an extension disposed on sidewalls of the first and second semiconductor chips. The method includes removing the extension. The method includes forming a first molding layer substantially covering the first and second semiconductor chips. The method includes performing a cutting process on the package substrate between the first and second semiconductor chips to form a plurality of semiconductor packages each including at least one of the first semiconductor chips and at least one of the second semiconductor chips.

公开(公告)号：US10354985B2

公开(公告)日：2019-07-16

申请号：US15438184

申请日：2017-02-21

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Won-Gi Chang ,  Dongwon Lee ,  Myung-Sung Kang ,  Hyein Yoo

IPC: H01L21/56 ,  H01L25/00 ,  H01L21/78 ,  H01L23/00 ,  H01L25/065

Abstract: A method for manufacturing a semiconductor device includes stacking, on a package substrate, first semiconductor chips. Each of the first semiconductor chips includes a first adhesive film. The method includes stacking, respectively on the first semiconductor chips, second semiconductor chips. Each of the second semiconductor chips includes a second adhesive film. The method includes compressing the first and second adhesive films to form an adhesive structure. The adhesive structure includes an extension disposed on sidewalls of the first and second semiconductor chips. The method includes removing the extension. The method includes forming a first molding layer substantially covering the first and second semiconductor chips. The method includes performing a cutting process on the package substrate between the first and second semiconductor chips to form a plurality of semiconductor packages each including at least one of the first semiconductor chips and at least one of the second semiconductor chips.