公开(公告)号：US10354985B2

公开(公告)日：2019-07-16

申请号：US15438184

申请日：2017-02-21

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Won-Gi Chang ,  Dongwon Lee ,  Myung-Sung Kang ,  Hyein Yoo

IPC: H01L21/56 ,  H01L25/00 ,  H01L21/78 ,  H01L23/00 ,  H01L25/065

Abstract: A method for manufacturing a semiconductor device includes stacking, on a package substrate, first semiconductor chips. Each of the first semiconductor chips includes a first adhesive film. The method includes stacking, respectively on the first semiconductor chips, second semiconductor chips. Each of the second semiconductor chips includes a second adhesive film. The method includes compressing the first and second adhesive films to form an adhesive structure. The adhesive structure includes an extension disposed on sidewalls of the first and second semiconductor chips. The method includes removing the extension. The method includes forming a first molding layer substantially covering the first and second semiconductor chips. The method includes performing a cutting process on the package substrate between the first and second semiconductor chips to form a plurality of semiconductor packages each including at least one of the first semiconductor chips and at least one of the second semiconductor chips.

公开(公告)号：US20190273075A1

公开(公告)日：2019-09-05

申请号：US16417934

申请日：2019-05-21

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Won-Gi Chang ,  Dongwon Lee ,  Myung-Sung Kang ,  Hyein Yoo

IPC: H01L25/00 ,  H01L25/065 ,  H01L23/00 ,  H01L21/78 ,  H01L21/56

Abstract: A method for manufacturing a semiconductor device includes stacking, on a package substrate, first semiconductor chips. Each of the first semiconductor chips includes a first adhesive film. The method includes stacking, respectively on the first semiconductor chips, second semiconductor chips. Each of the second semiconductor chips includes a second adhesive film. The method includes compressing the first and second adhesive films to form an adhesive structure. The adhesive structure includes an extension disposed on sidewalls of the first and second semiconductor chips. The method includes removing the extension. The method includes forming a first molding layer substantially covering the first and second semiconductor chips. The method includes performing a cutting process on the package substrate between the first and second semiconductor chips to form a plurality of semiconductor packages each including at least one of the first semiconductor chips and at least one of the second semiconductor chips.

公开(公告)号：US11289430B2

公开(公告)日：2022-03-29

申请号：US16835884

申请日：2020-03-31

Applicant: Samsung Electronics Co., Ltd.

Inventor： Won-Gi Chang ,  Bok Sik Myung

IPC: H01L23/00 ,  H01L23/31 ,  H01L23/498 ,  H01L21/48 ,  H01L21/56 ,  H01L21/78 ,  H01L25/065 ,  H01L25/18

Abstract: A semiconductor package may include a package substrate, a support structure on the package substrate and having a cavity therein, and at least one first semiconductor chip on the package substrate in the cavity. The support structure may have a first inner sidewall facing the cavity, a first top surface, and a first inclined surface connecting the first inner sidewall and the first top surface. The first inclined surface may be inclined with respect to a top surface of the at least one first semiconductor chip.

公开(公告)号：US10923465B2

公开(公告)日：2021-02-16

申请号：US16417934

申请日：2019-05-21

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Won-Gi Chang ,  Dongwon Lee ,  Myung-Sung Kang ,  Hyein Yoo

IPC: H01L25/00 ,  H01L21/683 ,  H01L21/56 ,  H01L23/31 ,  H01L23/00 ,  H01L21/78 ,  H01L25/065

Abstract: A method for manufacturing a semiconductor device includes stacking, on a package substrate, first semiconductor chips. Each of the first semiconductor chips includes a first adhesive film. The method includes stacking, respectively on the first semiconductor chips, second semiconductor chips. Each of the second semiconductor chips includes a second adhesive film. The method includes compressing the first and second adhesive films to form an adhesive structure. The adhesive structure includes an extension disposed on sidewalls of the first and second semiconductor chips. The method includes removing the extension. The method includes forming a first molding layer substantially covering the first and second semiconductor chips. The method includes performing a cutting process on the package substrate between the first and second semiconductor chips to form a plurality of semiconductor packages each including at least one of the first semiconductor chips and at least one of the second semiconductor chips.

公开(公告)号：US10115613B2

公开(公告)日：2018-10-30

申请号：US15470606

申请日：2017-03-27

Applicant: Samsung Electronics Co., Ltd.

Inventor： Won-Gi Chang ,  Yeongseok Kim ,  Hyein Yoo

IPC: H01L21/00 ,  H01L21/67 ,  H01L21/673 ,  H01L21/56 ,  H01L23/00 ,  H01L23/31

Abstract: The present disclosure relates to a method of fabricating a semiconductor package. The method may include forming a cavity in a package substrate and providing the package substrate and a die on a carrier tape film. Here, the carrier tape film may include a tape substrate and an insulating layer on the tape substrate, and the die may be provided in the cavity of the package substrate. The method may further include subsequently forming an encapsulation layer to cover the insulating layer and the die in the cavity and cover the package substrate on the insulating layer and removing the tape substrate from the insulating layer.