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公开(公告)号:US20200098734A1
公开(公告)日:2020-03-26
申请号:US16698749
申请日:2019-11-27
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: CHANHEE JEONG , HYUNKI KIM , JUNWOO PARK , BYOUNG WOOK JANG , SUNCHUL KIM , SU-MIN PARK , PYOUNGWAN KIM , INKU KANG , HEEYEOL KIM
Abstract: A semiconductor package includes a semiconductor chip disposed on a first substrate, a mold layer covering a sidewall of the semiconductor chip and including a through-hole, a second substrate disposed on the semiconductor chip, a connection terminal disposed between the first substrate and the second substrate and provided in the through-hole, and an underfill resin layer extending from between the semiconductor chip and the second substrate into the through-hole.
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公开(公告)号:US20180145061A1
公开(公告)日:2018-05-24
申请号:US15818346
申请日:2017-11-20
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: CHANHEE JEONG , HYUNKI KIM , JUNWOO PARK , BYOUNG WOOK JANG , SUNCHUL KIM , SU-MIN PARK , PYOUNGWAN KIM , INKU KANG , HEEYEOL KIM
CPC classification number: H01L25/105 , H01L21/4853 , H01L21/4857 , H01L21/565 , H01L23/3121 , H01L23/3128 , H01L23/3135 , H01L23/49811 , H01L23/49816 , H01L23/5383 , H01L23/5385 , H01L23/5386 , H01L23/5389 , H01L24/13 , H01L24/19 , H01L24/20 , H01L24/32 , H01L24/48 , H01L24/97 , H01L25/50 , H01L2224/04042 , H01L2224/13101 , H01L2224/16225 , H01L2224/214 , H01L2224/32145 , H01L2224/32225 , H01L2224/48091 , H01L2224/48227 , H01L2224/73265 , H01L2224/97 , H01L2225/0651 , H01L2225/06568 , H01L2225/1023 , H01L2225/1035 , H01L2225/1041 , H01L2225/1058 , H01L2924/00014 , H01L2924/15151 , H01L2924/15311 , H01L2224/45099 , H01L2924/014 , H01L2924/00012 , H01L2224/81 , H01L2924/00
Abstract: A semiconductor package includes a semiconductor chip disposed on a first substrate, a mold layer covering a sidewall of the semiconductor chip and including a through-hole, a second substrate disposed on the semiconductor chip, a connection terminal disposed between the first substrate and the second substrate and provided in the through-hole, and an underfill resin layer extending from between the semiconductor chip and the second substrate into the through-hole.
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