公开(公告)号：US20250103288A1

公开(公告)日：2025-03-27

申请号：US18818742

申请日：2024-08-29

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jae Hun JANG ,  Hong Rak SON ,  Dong-Min SHIN ,  JongYoon YOON ,  Younho JEON ,  Sejung KWON ,  Byeoungwook KIM ,  Baeseong PARK ,  Mankeun SEO ,  Byungmin AHN ,  Dongsoo LEE

IPC: G06F7/485 ,  G06F5/01 ,  G06F7/22

Abstract: Disclosed is an accelerator performing an accumulation operation on a plurality of data, each being a floating point type. A method of operating the accelerator includes loading first data, finding a first exponent, which is a maximum value among exponents of the first data, generating aligned first fractions by performing a bit shift on first fractions of the first data based on the first exponent, and generating a first accumulated value by an accumulation operation on the aligned first fractions, loading second data, finding a second exponent, which is a maximum value among exponents of the second data, and generating a first aligned accumulated value by a bit shift on the first accumulated value, generating aligned second fractions by a bit shift on second fractions of the second data, and generating a second accumulated value by an accumulation operation on the aligned second fractions and the first aligned accumulated value.

公开(公告)号：US20220023963A1

公开(公告)日：2022-01-27

申请号：US17216922

申请日：2021-03-30

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sangkeun AHN ,  Hyeji SHIN ,  Dongsoo LEE ,  Sangho JANG

IPC: B23K3/06 ,  B06B1/10

Abstract: Disclosed are ball jumping apparatuses and ball absorption methods using the same. The ball jumping apparatus comprises a fixing part, a moving part spaced apart from the fixing part, and a resilient member that connects the fixing part and the moving part to each other. The resilient member extends upwardly from the fixing part and has a connection with the moving part. The fixing part includes a fixing plate that spreads in a horizontal direction. The moving part includes an oscillating vessel that has a ball receiving space in which a ball is received, and an oscillator coupled to the oscillating vessel. A bottom surface of the oscillating vessel is upwardly spaced apart from a top surface of the fixing plate.

公开(公告)号：US20210027168A1

公开(公告)日：2021-01-28

申请号：US16892730

申请日：2020-06-04

Applicant: Samsung Electronics Co., Ltd.

Inventor： Dongsoo LEE ,  Sejung KWON ,  Byeoungwook KIM

IPC: G06N3/08 ,  G06N5/04 ,  H03M7/30

Abstract: An electronic apparatus is provided. The electronic apparatus includes a memory configured to store one instruction or more and a processor configured to obtain output data by inputting input data to an artificial intelligence model including a plurality of layers by executing the instruction, and the artificial intelligence model is configured to output the output data based on operation through the plurality of layers and the processor is configured to encode operation data output from one of the plurality of layers and store the encoded operation data in the memory, obtain recovery data corresponding to the operation data by decoding the encoded operation data stored in the memory, and provide the obtained recovery data to another layer from among the plurality of layers.

公开(公告)号：US20210019625A1

公开(公告)日：2021-01-21

申请号：US17044104

申请日：2019-01-04

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Dongsoo LEE ,  Byeoungwook LIM ,  Kwanghoon SON ,  Jonghun LEE

IPC: G06N3/08 ,  G06F17/11

Abstract: Disclosed is an electronic device. The present electronic device includes: a memory; and a processor which quantizes a neural network, trained on the basis of deep learning, to generate a quantized neural network, and stores the quantized neural network in the memory, wherein the processor quantizes, in preset first bit units, trained connection strengths between neurons of the trained neural network, inverse-quantizes the quantized connection strengths in preset second bit units, retrains the inverse-quantized connection strengths, and quantizes the retrained connection strengths in the preset first bit units.

公开(公告)号：US20250117440A1

公开(公告)日：2025-04-10

申请号：US18817733

申请日：2024-08-28

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jae Hun JANG ,  Hong Rak SON ,  Dong-Min SHIN ,  JongYoon YOON ,  Jihoon LIM ,  Younho JEON ,  Dongsoo LEE ,  Sejung KWON ,  Byeoungwook KIM ,  Baeseong PARK

IPC: G06F17/16 ,  G06F5/01

Abstract: At least one embodiment provides a computing device including: a controller that receives first input data of a first data type and second input data of a second data type different from the first data type, and outputs a first signal representing the first data type, a second signal representing the second data type, and a clock signal based on the number of bits of the first input data and the second input data, and a computing circuit that performs a multiplication computation the first input data and the second input data based on the first signal, the second signal, and the clock signal and generates output data.

公开(公告)号：US20250015760A1

公开(公告)日：2025-01-09

申请号：US18781472

申请日：2024-07-23

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Dongsoo LEE ,  Daehoon KWON ,  Dongin KIM ,  Chunsuk KIM ,  Yiju ROH ,  Inhyeok PARK

IPC: H03B5/12

Abstract: Disclosed are a voltage-controlled oscillator and an electronic device comprising same. A voltage-controlled oscillator according to one embodiment includes an LC tank and one or more GM cells connected to the LC tank. The LC tank includes a variable capacitor and a switched inductor connected in parallel to the variable capacitor. The GM cells include one or more decoupling capacitors inserted between the LC tank and one or more drain nodes of the GM cells.

公开(公告)号：US20200373946A1

公开(公告)日：2020-11-26

申请号：US16854285

申请日：2020-04-21

Applicant: Samsung Electronics Co., Ltd.

Inventor： Dongsoo LEE ,  Sejung KWON ,  Byeoungwook KIM ,  Parichay KAPOOR ,  Baeseong PARK

IPC: H03M13/00 ,  H03M13/11 ,  H03M13/27 ,  G06N3/06

Abstract: A decompression apparatus is provided. The decompression apparatus includes a memory configured to store compressed data decompressed and used in neural network processing of an artificial intelligence model, a decoder configured to include a plurality of logic circuits related to a compression method of the compressed data, decompress the compressed data through the plurality of logic circuits based on an input of the compressed data, and output the decompressed data, and a processor configured to obtain data of a neural network processible form from the data output from the decoder.

公开(公告)号：US20250139194A1

公开(公告)日：2025-05-01

申请号：US18823847

申请日：2024-09-04

Applicant: Samsung Electronics Co., Ltd. ,  NAVER CORPORATION

Inventor： Younho JEON ,  Hong Rak SON ,  Wonsuk SONG ,  Younggeon YOO ,  JongYoon YOON ,  Jihoon LIM ,  Jae Hun JANG ,  Sejung KWON ,  Byeoungwook KIM ,  Baeseong PARK ,  Dongsoo LEE

IPC: G06F17/16 ,  G06F5/01 ,  H03M7/24

Abstract: A matrix multiplier includes an input vector scaler configured to generate a first scaled input vector based on a first input vector and a plurality of quantization scale coefficients, a first data type converter configured to generate a first fixed-point scaled input vector based on the first scaled input vector, a processing element array including a first processing element configured to generate a first fixed-point output element based on the first fixed-point scaled input vector and first plurality of quantization sign values and a second processing element configured to generate a second fixed-point output element based on the first fixed-point scaled input vector and second plurality of quantization sign values, and a second data type converter configured to generate first and second output elements by converting data type of the first and second fixed-point output elements, and to output a first output vector including the first and second output elements.

公开(公告)号：US20240047253A1

公开(公告)日：2024-02-08

申请号：US18177300

申请日：2023-03-02

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sangho JANG ,  Dongsoo LEE ,  Kibeom KIL ,  Yeongseok KIM ,  Wooram OH ,  Youngshin CHOI

IPC: H01L21/677 ,  B65G47/90 ,  H01L21/67 ,  H05K13/00

CPC classification number: H01L21/6773 ,  H01L21/67736 ,  H01L21/67742 ,  B65G47/901 ,  H01L21/67757 ,  H01L21/67144 ,  H05K13/0061

Abstract: A substrate loading apparatus includes a pickup apparatus configured to move a magazine in a first direction, a second direction and a third direction, an elevator defining a plurality of waiting spaces, a stage configured to support the magazine, and an insert apparatus configured to transfer substrates in the magazine. At least one of the plurality of waiting spaces of the elevator is configured to selectively receive the magazine, and the pickup apparatus is spaced apart from the elevator and the stage in the third direction.

公开(公告)号：US20230361121A1

公开(公告)日：2023-11-09

申请号：US18353214

申请日：2023-07-17

Applicant: Samsung Electronics Co., Ltd.

Inventor： Dongsoo LEE ,  Wonkeun CHUNG ,  Hoonjoo NA ,  Suyoung BAE ,  Jaeyeol SONG ,  Jonghan LEE ,  HyungSuk JUNG ,  Sangjin HYUN

IPC: H01L27/092 ,  H01L29/786 ,  H01L21/8238 ,  H01L29/49 ,  H01L29/51 ,  H01L29/423

CPC classification number: H01L27/0922 ,  H01L29/78696 ,  H01L21/823842 ,  H01L29/4966 ,  H01L29/517 ,  H01L29/42392

Abstract: Disclosed are semiconductor devices and methods of manufacturing the same. The semiconductor device comprises a first transistor on a substrate, and a second transistor on the substrate. Each of the first and second transistors includes a plurality of semiconductor patterns vertically stacked on the substrate and vertically spaced apart from each other, and a gate dielectric pattern and a work function pattern filling a space between the semiconductor patterns. The work function pattern of the first transistor includes a first work function metal layer, the work function pattern of the second transistor includes the first work function metal layer and a second work function metal layer, the first work function metal layer of each of the first and second transistors has a work function greater than that of the second work function metal layer, and the first transistor has a threshold voltage less than that of the second transistor.