公开(公告)号：US20240105790A1

公开(公告)日：2024-03-28

申请号：US18337952

申请日：2023-06-20

Applicant: Samsung Electronics Co., Ltd.

Inventor： Joonsoo PARK ,  Bongjin KUH ,  Bongsoo KIM ,  Yoonjae KIM ,  Dongsoo WOO

IPC: H01L29/423 ,  H10B12/00

CPC classification number: H01L29/4236 ,  H01L28/60 ,  H10B12/315 ,  H10B12/482 ,  H10B12/488

Abstract: Provided is an integrated circuit device including a substrate including a first active area and a second active area each extending in a first direction, a bit line extending in the first direction in a first trench of the substrate and arranged between the first active area and the second active area in a second direction perpendicular to the first direction, a contact structure including a lower contact contacting the bit line and an upper contact contacting the first active area, a word line extending in the second direction in a second trench of the substrate, a plurality of landing pads on the substrate, and a capacitor structure including a plurality of lower electrodes on the plurality of landing pads, wherein the bit line and the word line are buried under an upper surface of the substrate.

公开(公告)号：US20150255649A1

公开(公告)日：2015-09-10

申请号：US14582294

申请日：2014-12-24

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Beom Seok KIM ,  Bongjin KUH ,  Jongsung LIM ,  Hanmei CHOI

IPC: H01L31/0352 ,  H01L31/18

CPC classification number: H01L31/03529 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/26513 ,  H01L31/1804 ,  H01L31/1864 ,  Y02P70/521

Abstract: A semiconductor device includes a first semiconductor layer including a recess region and protrusions defined by the recessed region, first insulating patterns provided on the protrusions and extending to sidewalls of the protrusions, and a second semiconductor layer to fill the recess region and cover the first insulating patterns. The protrusions includes a first group of protrusions spaced apart from each other in a first direction to constitute a row and a second group of protrusions spaced from the first group of protrusions in a second direction intersecting the first direction and spaced from each other in the first direction to constitute a row. The second group of protrusions are shifted from the first group of protrusions in the first direction.

Abstract translation: 半导体器件包括：第一半导体层，包括凹陷区域和由凹陷区域限定的突起;设置在突起上并延伸到突起侧壁的第一绝缘图案;以及第二半导体层，用于填充凹陷区域并覆盖第一绝缘体 模式。 突起包括在第一方向上彼此间隔开的第一组突起，以构成一排，并且在与第一方向相交的第二方向上与第一组突起间隔开的第二组突起在第一方向上彼此间隔开 方向构成一排。 第二组突起在第一方向从第一组突起移位。

公开(公告)号：US20230290870A1

公开(公告)日：2023-09-14

申请号：US17888562

申请日：2022-08-16

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jinhong PARK ,  Jiwan Koo ,  Maksim ANDREEV ,  Sahwan HONG ,  Seunghwan SEO ,  Juhee LEE ,  Bongjin KUH

IPC: H01L29/76 ,  H01L29/24 ,  H01L29/417 ,  H01L29/786 ,  H01L21/02 ,  H01L29/66

CPC classification number: H01L29/7606 ,  H01L29/24 ,  H01L29/41733 ,  H01L29/78618 ,  H01L29/78696 ,  H01L21/02568 ,  H01L29/66969

Abstract: A semiconductor device includes a channel on a substrate. The channel includes a 2-dimensional material. A gate insulating layer is on a first portion of the channel. A gate electrode is on a portion of the gate insulating layer. First and second contact patterns are on second portions of the channel, respectively. Each of the first and second contact patterns includes a 2-dimensional material having an intercalation material disposed therein. First and second source/drain electrodes are on the first and second contact patterns, respectively. Each of the first and second source/drain electrodes includes a metal.

公开(公告)号：US20160126119A1

公开(公告)日：2016-05-05

申请号：US14881414

申请日：2015-10-13

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Joonghan SHIN ,  Bongjin KUH ,  Wanit MANOROTKUL ,  Hanmei CHOI

IPC: H01L21/67 ,  H01L21/683 ,  H01L21/324 ,  B23K26/00 ,  H01L21/687

CPC classification number: H01L21/67115 ,  H01L21/268 ,  H01L21/68742

Abstract: A laser annealing apparatus includes a process chamber with a chamber window to transmit a laser beam, and a chuck in the process chamber, a top surface of the chuck supporting a loaded substrate, and a width of the chuck being smaller than a width of the loaded substrate.

Abstract translation: 激光退火装置包括具有腔室窗口以传递激光束的处理室和处理室中的卡盘，卡盘的顶表面支撑加载的基板，并且卡盘的宽度小于 加载基板。

公开(公告)号：US20230317811A1

公开(公告)日：2023-10-05

申请号：US17989435

申请日：2022-11-17

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jinhong PARK ,  Jiwan KOO ,  Sahwan HONG ,  Juncheol KANG ,  Seunghwan SEO ,  Hogeun AHN ,  Jaewoong CHOI ,  Bongjin KUH

IPC: H01L29/45 ,  H01L29/24 ,  H01L29/76 ,  H01L21/02 ,  H01L29/40 ,  H01L29/66

CPC classification number: H01L29/45 ,  H01L29/24 ,  H01L29/7606 ,  H01L21/02568 ,  H01L29/401 ,  H01L29/66969

Abstract: A semiconductor device includes a channel on a substrate, the channel including a two-dimensional (2D) material, a gate insulating layer on a portion of the channel, a gate electrode on the gate insulating layer, first and second contact patterns on respective portions of the channel, the first and second contact patterns including a carbide of a transition metal, and first and second source/drain electrodes on the first and second contact patterns, respectively, and the first and second source/drain electrodes including a metal.

公开(公告)号：US20230282389A1

公开(公告)日：2023-09-07

申请号：US17897519

申请日：2022-08-29

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sangjun LEE ,  Gabjin NAM ,  Eunha LEE ,  Hyangsook LEE ,  Bongjin KUH ,  Junghwa KIM

IPC: H01B3/12 ,  H01B3/10 ,  H01L29/51 ,  H01L29/49 ,  H01L49/02

CPC classification number: H01B3/12 ,  H01B3/10 ,  H01L29/516 ,  H01L29/517 ,  H01L29/4908 ,  H01L28/40 ,  H01L29/785

Abstract: A thin-film structure and a semiconductor device including the same are provided. The thin-film structure includes: a base layer; and a dielectric layer on the base layer, the dielectric layer including crystals including a (0≤x≤1) crystal orientation in an out-of-plane direction of the base layer and having an orthorhombic crystal structure of an oIV phase (space group: Pmn21).

公开(公告)号：US20150115368A1

公开(公告)日：2015-04-30

申请号：US14330777

申请日：2014-07-14

Applicant: Samsung Electronics Co., Ltd.

Inventor： Ki-Chul KIM ,  Joonghan SHIN ,  Bongjin KUH ,  Taegon KIM ,  Hanmei CHOI

IPC: H01L29/06 ,  H01L21/8238 ,  H01L27/092

CPC classification number: H01L29/0696 ,  H01L21/823807 ,  H01L21/845 ,  H01L27/092 ,  H01L27/1211

Abstract: Provided are a semiconductor device and a method of fabricating the same. The semiconductor device may include a plurality of unit cells provided on a semiconductor substrate. Each of the unit cells may include a buried insulating pattern buried in the semiconductor substrate, a first active pattern provided on the buried insulating pattern, and a second active pattern provided on the buried insulating pattern and spaced apart from the first active pattern. The buried insulating pattern may define a unit cell region, in which each of the unit cells may be disposed.

Abstract translation: 提供半导体器件及其制造方法。 半导体器件可以包括设置在半导体衬底上的多个单元电池。 每个单电池可以包括埋在半导体衬底中的掩埋绝缘图案，设置在掩埋绝缘图案上的第一有源图案和设置在掩埋绝缘图案上并与第一有源图案间隔开的第二有源图案。 埋置的绝缘图案可以限定单位单元区域，其中可以布置每个单位单元。