公开(公告)号：US4892594A

公开(公告)日：1990-01-09

申请号：US253890

申请日：1988-10-05

申请人： Ryoji Fujiwara ,  Minori Yamaguchi ,  Isamu Shimizu

发明人： Ryoji Fujiwara ,  Minori Yamaguchi ,  Isamu Shimizu

IPC分类号： H01L31/04 ,  H01L31/032 ,  H01L31/062 ,  H01L31/072 ,  H01L31/075

CPC分类号： H01L31/074 ,  H01L31/032 ,  H01L31/062 ,  H01L31/075 ,  Y02E10/548

摘要： A photovoltaic element comprises a p-type layer comprising a p-type transition metal oxide, an active layer comprising an amorphous silicon, a n-type layer comprising an amorphous silicon containing a n-type impurity, and an electrode.

摘要翻译： 光电元件包括​​包含p型过渡金属氧化物的p型层，包含非晶硅的有源层，包含含有n型杂质的非晶硅的n型层和电极。

公开(公告)号：US4839240A

公开(公告)日：1989-06-13

申请号：US135517

申请日：1987-12-18

申请人： Isamu Shimizu ,  Minori Yamaguchi

发明人： Isamu Shimizu ,  Minori Yamaguchi

IPC分类号： G03G5/08 ,  H01L31/0248 ,  H01L31/0376 ,  H01L31/0392 ,  H01L31/09 ,  H01L31/20

CPC分类号： H01L31/095 ,  H01L31/03765 ,  H01L31/03921 ,  H01L31/202 ,  H01L31/204 ,  Y02E10/548 ,  Y02P70/521 ,  Y10T428/12632

摘要： A multilayer photoconductive material wherein at least two kinds of alloys selected from the group consisting of amorphous silicon or germanium alloys comprising silicon and/or germanium and at least one element selected from the group consisting of carbon, fluorine and hydrogen are alternately laminated, the kinds of alloys of the adjacent layers being different from each other and the total number of the layers being at least 6, which has exhibits a high response speed and can be easily controlled in sensitivity not only to long wavelength light but also to short wavelength light.

摘要翻译： 一种多层感光材料，其中选自包含硅和/或锗的非晶硅或锗合金的至少两种合金和选自碳，氟和氢的至少一种元素交替层压， 的相邻层的合金彼此不同，并且层的总数至少为6，其具有高响应速度，并且可以容易地不仅对长波长的光而且对于短波长的光敏感地控制。

公开(公告)号：US4569891A

公开(公告)日：1986-02-11

申请号：US595366

申请日：1984-03-30

申请人： Isamu Shimizu ,  Minori Yamaguchi

发明人： Isamu Shimizu ,  Minori Yamaguchi

IPC分类号： G03G5/043 ,  G03G5/08 ,  H01L31/0248 ,  H01L31/08 ,  G03G5/082 ,  G03G5/14

CPC分类号： G03G5/08 ,  G03G5/0433

摘要： A multi-layered photoconductive material which comprises first layers containing at least one VIb chalcogen element chosen from S, Se and Te and second layers containing at least one IIb element chosen from Zn, Cd and Hg and acting as electric potential barriers, said first layers and said second layers being alternatively arranged and the total number of said first layers and said second layers being not less than 5 and has a high response speed and an excellent sensitivity to long wavelength light with a great dark resistance.

摘要翻译： 一种多层感光材料，其包含含有至少一种选自S，Se和Te的VIb硫属元素的第一层和包含至少一种选自Zn，Cd和Hg的IIb元素并用作电势屏障的第二层，所述第一层 并且所述第二层交替布置，并且所述第一层和所述第二层的总数不小于5，并且对于具有很好的暗电阻的长波长光具有高响应速度和极好的灵敏度。

公开(公告)号：US4605285A

公开(公告)日：1986-08-12

申请号：US593490

申请日：1984-03-26

申请人： Ryoji Fujiwara ,  Isamu Shimizu

发明人： Ryoji Fujiwara ,  Isamu Shimizu

IPC分类号： G02F1/15 ,  G02F1/17

CPC分类号： G02F1/1523

摘要： An electrochromic device comprises an oxidative-coloration layer between a pair of electrodes, said oxidative-coloration layer being composed of a film of a metal oxyhydroxide represented by the formula:MOx(OH)ywherein M is a metal of group VIII of the periodic table, x is a number satisfying 0

摘要翻译： 电致变色装置包括一对电极之间的氧化着色层，所述氧化着色层由下式表示的金属羟基氧化物膜组成：MOx（OH）y，其中M是周期性的第VIII族金属 表中，x是满足0

公开(公告)号：US4670334A

公开(公告)日：1987-06-02

申请号：US659850

申请日：1984-10-11

申请人： Ryoji Fujiwara ,  Isamu Shimizu

发明人： Ryoji Fujiwara ,  Isamu Shimizu

IPC分类号： C23C14/06 ,  C23C14/00 ,  C23C14/08 ,  C23C14/32 ,  H01B5/14 ,  H01B13/00 ,  H01L31/0224 ,  H01L31/18 ,  B32B7/02

CPC分类号： C23C14/08 ,  C23C14/0036 ,  C23C14/32 ,  H01L31/022466 ,  H01L31/1884 ,  Y02E10/50 ,  Y10T29/413 ,  Y10T428/265 ,  Y10T428/31681 ,  Y10T428/31692

摘要： A transparent electroconductive film is of p-type and mainly composed of iridium oxide. The p-type transparent electroconductive film can be produced by a reactive sputtering or reactive ion plating at room temperature. The p-type transparent electroconductive film can be used as electrodes.

摘要翻译： 透明导电膜为p型，主要由氧化铱组成。 p型透明导电膜可以通过在室温下的反应溅射或反应离子镀来制造。 p型透明导电膜可以用作电极。

公开(公告)号：US5322568A

公开(公告)日：1994-06-21

申请号：US999548

申请日：1992-12-31

申请人： Shunichi Ishihara ,  Jun-ichi Hanna ,  Isamu Shimizu ,  Masaaki Hirooka

发明人： Shunichi Ishihara ,  Jun-ichi Hanna ,  Isamu Shimizu ,  Masaaki Hirooka

IPC分类号： C23C16/452 ,  C23C16/00

CPC分类号： C23C16/452

摘要： An apparatus for forming a deposited film by introducing two or more kinds of gaseous starting materials for formation of a deposited film and a gaseous halogenic oxidizing agent having the property of oxidation action for said starting materials into a reaction space to effect chemical contact therebetween to thereby form a plural number of precursors including precursors under excited state, and forming a deposited film in a plurality of layers with different compositions on a substrate existing in a film forming space spatially communicated with said reaction space with the use of at least one precursor of the precursors as the feeding source for the constituent element of the deposited film, said apparatus comprising a plural number of gas introducing means of a multiple tubular structure for discharging into said reaction space said gaseous starting materials and said gaseous halogenic oxidizing agent through the discharging outlets, respectively, and permitting them to react with each other to form the precursors and means for preventing contact of precursors unnecessary for the desired film formation of the precursors with the substrate.

摘要翻译： 一种用于通过将用于形成沉积膜的两种或更多种气态起始材料和具有用于所述原料的氧化作用的气态卤素氧化剂引入反应空间以在其间进行化学接触而形成沉积膜的装置，由此 形成多个前体，其包括在激发态下的前体，并且在存在于与所述反应空间空间连通的成膜空间中的基底上形成具有不同组成的多个层的沉积膜，其中使用至少一种前体 前体作为沉积膜的构成元素的进料源，所述装置包括多个多管状结构的气体引入装置，用于通过排出口将所述气态原料和所述气态卤素氧化剂排放到所述反应空间中， 并允许他们作出反应 彼此形成前体和用于防止前体与基质的所需膜形成所必需的前体接触的装置。

公开(公告)号：US4868014A

公开(公告)日：1989-09-19

申请号：US3054

申请日：1987-01-13

申请人： Masahiro Kanai ,  Masaaki Hirooka ,  Jun-Ichi Hanna ,  Isamu Shimizu

发明人： Masahiro Kanai ,  Masaaki Hirooka ,  Jun-Ichi Hanna ,  Isamu Shimizu

IPC分类号： C23C16/452 ,  G03G5/082 ,  H01L21/205 ,  H01L21/336 ,  H01L31/20

CPC分类号： H01L29/66757 ,  C23C16/452 ,  G03G5/08235 ,  H01L21/02425 ,  H01L21/0245 ,  H01L21/02505 ,  H01L21/02532 ,  H01L21/02579 ,  H01L21/0262 ,  H01L31/202 ,  H01L31/204 ,  Y02E10/50

摘要： A method for forming a thin film multi-layer structure member having at least one of at least one kind of a semiconductor thin film controlled in valence electron and a semiconductor thin film regulated in band gap comprises the step of forming at least one layer of the semiconductor thin films on a substrate by energizing a heat-generating member constituted of either a single substance or an alloy of a transition metal element having the catalystic effect provided in a film forming space to effect heat generation, bringing a starting material (A) for deposited film formation containing at least one element of halogens and hydrogen in the molecule and a compound (B) containing an element which becomes at least one of the valence electron controller and the band gap regulator into contact with the heat-generating member under heat generating state to cause a thermal dissociation reaction to effect activation, thereby forming a precursor (X) which becomes the starting material for deposited film formation and using the precursor (X) as the feeding source for the constituent element of the thin film, and the step of forming at least one layer of other thin films by introducing a gaseous starting material (a) for deposited film formation and a gaseous halogenic oxidizing agent having the property of oxidation action for the starting material (a) into a reaction space to effect contact therebetween to thereby form chemically a plural number of precursors including precursors under excited state and using at least one precursor of the precursors as the feeding source for the constituent element of the deposited film.

摘要翻译： 一种用于形成薄膜多层结构构件的方法，所述薄膜多层结构构件具有至少一种受限于价电子的半导体薄膜和在带隙中调节的半导体薄膜中的至少一种，包括形成至少一层 半导体薄膜通过对由成膜空间中具有催化作用的过渡金属元素的单一物质或合金构成的发热元件进行加热而产生发热，使起始材料（A）为 在分子中含有卤素和氢的至少一种元素的沉积膜形成物和含有成为价电子控制器和带隙调节剂中的至少一种的元素的化合物（B），其在发热下与发热元件接触 导致热解离反应进行活化，从而形成成为沉淀的起始原料的前体（X） 并且使用前体（X）作为薄膜的构成元素的供给源，以及通过引入用于沉积膜形成的气态原料（a）形成至少一层其它薄膜的步骤，以及 具有起始材料（a）的氧化作用的气态卤素氧化剂进入反应空间以实现其间的接触，由此在激发态下化学形成包含前体的多种前体，并使用至少一种前体前体作为 用于沉积膜的构成元件的馈送源。

公开(公告)号：US4865883A

公开(公告)日：1989-09-12

申请号：US298202

申请日：1989-01-17

申请人： Keishi Saitoh ,  Masaaki Hirooka ,  Jun-ichi Hanna ,  Isamu Shimizu

发明人： Keishi Saitoh ,  Masaaki Hirooka ,  Jun-ichi Hanna ,  Isamu Shimizu

IPC分类号： H01L31/04 ,  C23C16/30 ,  C23C16/40 ,  C23C16/44 ,  C23C16/452 ,  H01L21/205

CPC分类号： C23C16/407

摘要： A method for forming a deposited film comprises introducing a gaseous starting material containing In atoms or Sn atoms for formation of a deposited film, a gaseous halogenic oxidizing agent having the property of oxidation action for said starting material and an oxygen-containing gaseous compound into a reaction space to effect chemical contact therebetween to thereby form a plural number of precursors containing a presursor under excited state, and forming a deposited film on a substrate existing in a film forming space with the use of at least one precursor of these precursors as a feeding source for a constituent element of the deposited film.

摘要翻译： 形成沉积膜的方法包括引入含有In原子或Sn原子的气态原料以形成沉积膜，将具有所述原料氧化作用的气态卤素氧化剂和含氧气体化合物引入到 反应空间以在其间进行化学接触从而形成多个在激发态下含有前体的前体，并且使用这些前体的至少一种前体作为进料，在存在于成膜空间中的基底上形成沉积膜 源的沉积膜的构成元素。

公开(公告)号：US4861623A

公开(公告)日：1989-08-29

申请号：US942209

申请日：1986-12-16

申请人： Masao Ueki ,  Masaaki Hirooka ,  Junichi Hanna ,  Isamu Shimizu

发明人： Masao Ueki ,  Masaaki Hirooka ,  Junichi Hanna ,  Isamu Shimizu

IPC分类号： H01L31/04 ,  C23C16/30 ,  C23C16/44 ,  H01L21/205 ,  H01L21/3205

CPC分类号： H01L21/32053

摘要： A method for forming a deposited film comprises introducing a gaseous starting material containing silicon and/or germanium atoms; a starting material containing at least one member selected from the group consisting of aluminum (Al), molybdenum (Mo), tungsten (W), titanium (Ti), and tantalum (Ta), which is capable of being converted to gaseous state; and a gaseous halogenic oxidizing agent which exerts an oxidative effect on the said starting materials for film formation, into a reaction space to effect contact therebetween to thereby chemically form a plural number of precursors containing precursors under excited state, and forming a deposited film on a substrate existing in a film-forming space by the use of at least one precursors of said percursors as the feeding source for the constituent element of the deposited film.

摘要翻译： 形成沉积膜的方法包括引入含硅和/或锗原子的气态原料; 含有选自铝（Al），钼（Mo），钨（W），钛（Ti）和钽（Ta））中的至少一种的起始材料，其能够转化为气态; 以及对所述成膜原料发挥氧化作用的气态卤素氧化剂进入反应空间，以使其间发生接触，从而化学形成含激发态前体的多种前体，并在其上形成沉积膜 存在于成膜空间中的底物通过使用至少一种所述本体的前体作为沉积膜的组成元素的进料源。

公开(公告)号：US4844950A

公开(公告)日：1989-07-04

申请号：US942213

申请日：1986-12-16

申请人： Keishi Saitoh ,  Masaaki Hirooka ,  Jun-ichi Hanna ,  Isamu Shimizu

发明人： Keishi Saitoh ,  Masaaki Hirooka ,  Jun-ichi Hanna ,  Isamu Shimizu

IPC分类号： H01L31/04 ,  C23C16/06 ,  C23C16/30 ,  C23C16/44 ,  H01L21/205

CPC分类号： C23C16/06

摘要： A method for forming a deposited film comprises introducing into a reaction space a gasifiable starting material containing a transition metal element for formation of a deposited film and a gaseous halogenic oxidizing agent having the property of oxidation action for said starting material to effect contact therebetween to thereby chemically form a plural number of precursors including precursors under excited state, and forming a metal deposited film on a substrate existing in the film forming space with the use of at least one precursor of these precursors as the feeding source for the constituent element of the deposited film.

摘要翻译： 形成沉积膜的方法包括向反应空间引入含有用于形成沉积膜的过渡金属元素的可气化起始材料和具有用于所述起始材料的氧化作用的气态卤素氧化剂以在其间进行接触从而 在激发态下化学形成多种前体，包括前体，并且使用这些前体的至少一种前体作为沉积的构成元素的进料源，在存在于成膜空间中的基底上形成金属沉积膜 电影。