公开(公告)号：US20130250663A1

公开(公告)日：2013-09-26

申请号：US13429761

申请日：2012-03-26

Applicant: Romney R. Katti ,  James L. Tucker ,  Anuj Kohli

Inventor： Romney R. Katti ,  James L. Tucker ,  Anuj Kohli

IPC: G11C11/16

CPC classification number: H01L23/576 ,  G11C11/1657 ,  G11C11/1659 ,  G11C11/1673 ,  G11C11/1675 ,  G11C11/1695 ,  H01L27/228 ,  H01L43/02 ,  H01L43/08 ,  H01L2924/0002 ,  H01L2924/16152 ,  H01L2924/00

Abstract: A system may include circuitry and a magnetoresistive random access memory (MRAM) die including at least one MRAM cell. The circuitry may be configured to detect attempted tampering with the MRAM die and generate a signal based on the detected attempted tampering. The signal may be sufficient to damage or destroy at least one layer of the at least one MRAM cell or a fuse electrically connected to a read line of the at least one MRAM cell.

Abstract translation: 系统可以包括电路和包括至少一个MRAM单元的磁阻随机存取存储器（MRAM）管芯。 电路可以被配置为检测对MRAM管芯的尝试篡改，并且基于检测到的尝试篡改产生信号。 所述信号可能足以损坏或破坏所述至少一个MRAM单元的至少一层或电连接到所述至少一个MRAM单元的读取线的保险丝。

公开(公告)号：US20130250662A1

公开(公告)日：2013-09-26

申请号：US13429692

申请日：2012-03-26

Applicant: Romney R. Katti ,  James L. Tucker ,  Anuj Kohli

Inventor： Romney R. Katti ,  James L. Tucker ,  Anuj Kohli

IPC: G11C11/16 ,  H01L21/8246

CPC classification number: H01L23/57 ,  G11C11/16 ,  G11C11/1657 ,  G11C11/1659 ,  G11C11/1673 ,  G11C11/1675 ,  G11C11/1695 ,  H01L23/573 ,  H01L27/228 ,  H01L43/02 ,  H01L2924/0002 ,  H01L2924/16152 ,  H01L2924/00

Abstract: A magnetoresistive random access memory (MRAM) die may include an MRAM cell, a reservoir defined by the MRAM die, and a chemical disposed in the reservoir. At least one boundary of the reservoir may be configured to be damaged in response to attempted tampering with the MRAM die, such that at least some of the chemical is released from the reservoir when the at least one boundary of the reservoir is damaged. In some examples, at least some of the chemical is configured to contact and alter or damage at least a portion of the MRAM cell when the chemical is released from the reservoir.

Abstract translation: 磁阻随机存取存储器（MRAM）管芯可以包括MRAM单元，由MRAM管芯限定的储存器和设置在贮存器中的化学物质。 储存器的至少一个边界可以被配置为响应于试图篡改MRAM管芯而被损坏，使得当储存器的至少一个边界被损坏时，至少一些化学物质从贮存器释放。 在一些实例中，当化学品从储存器中释放时，至少一些化学物质被配置为接触和改变或损坏MRAM单元的至少一部分。

公开(公告)号：US20130241014A1

公开(公告)日：2013-09-19

申请号：US13419109

申请日：2012-03-13

Applicant: Romney R. Katti ,  James L. Tucker ,  Anuj Kohli

Inventor： Romney R. Katti ,  James L. Tucker ,  Anuj Kohli

IPC: H01L29/82 ,  H01L43/12

CPC classification number: H01L23/57 ,  G06F21/86 ,  G11C11/16 ,  G11C11/161 ,  G11C11/1657 ,  G11C11/1675 ,  G11C11/1695 ,  H01L23/573 ,  H01L27/222 ,  H01L2924/0002 ,  H01L2924/16152 ,  H01L2924/00

Abstract: A magnetoresistive random access memory (MRAM) package may include an MRAM die, a package defining a cavity and an exterior surface, and a magnetic security structure disposed within the cavity or on the exterior surface of the package. The MRAM die may be disposed in the cavity of the package, and the magnetic security structure may include at least three layers including a permanent magnetic layer and a soft magnetic layer.

Abstract translation: 磁阻随机存取存储器（MRAM）封装可以包括MRAM裸片，限定空腔和外表面的封装以及设置在封装体的腔体内或外表面上的磁性安全结构。 MRAM管芯可以设置在封装的空腔中，并且磁性安全结构可以包括至少三层，包括永磁层和软磁性层。

公开(公告)号：US08854870B2

公开(公告)日：2014-10-07

申请号：US13419066

申请日：2012-03-13

Applicant: Romney R. Katti ,  James L. Tucker ,  Anuj Kohli

Inventor： Romney R. Katti ,  James L. Tucker ,  Anuj Kohli

IPC: G11C11/00

CPC classification number: H01L23/573 ,  G06F21/79 ,  G11C11/161 ,  G11C11/1657 ,  G11C11/1659 ,  G11C11/1673 ,  G11C11/1675 ,  G11C11/1695 ,  H01L27/226 ,  H01L43/02 ,  H01L43/08 ,  H01L43/12 ,  H01L2924/0002 ,  H01L2924/00

Abstract: An MRAM die may include a first write line, a second write line, an MRAM cell disposed between the first write line and the second write line, and a magnetic security structure adjacent to the MRAM cell. The magnetic security structure may include a permanent magnetic layer and a soft magnetic layer.

Abstract translation: MRAM管芯可以包括第一写入线，第二写入线，布置在第一写入线和第二写入线之间的MRAM单元，以及与MRAM单元相邻的磁性安全结构。 磁性安全结构可以包括永久磁性层和软磁性层。

公开(公告)号：US08811072B2

公开(公告)日：2014-08-19

申请号：US13419109

申请日：2012-03-13

Applicant: Romney R. Katti ,  James L. Tucker ,  Anuj Kohli

Inventor： Romney R. Katti ,  James L. Tucker ,  Anuj Kohli

IPC: G11C11/00 ,  H01L23/00 ,  G11C11/16

CPC classification number: H01L23/57 ,  G06F21/86 ,  G11C11/16 ,  G11C11/161 ,  G11C11/1657 ,  G11C11/1675 ,  G11C11/1695 ,  H01L23/573 ,  H01L27/222 ,  H01L2924/0002 ,  H01L2924/16152 ,  H01L2924/00

Abstract: A magnetoresistive random access memory (MRAM) package may include an MRAM die, a package defining a cavity and an exterior surface, and a magnetic security structure disposed within the cavity or on the exterior surface of the package. The MRAM die may be disposed in the cavity of the package, and the magnetic security structure may include at least three layers including a permanent magnetic layer and a soft magnetic layer.

Abstract translation: 磁阻随机存取存储器（MRAM）封装可以包括MRAM裸片，限定空腔和外表面的封装以及设置在封装体的腔体内或外表面上的磁性安全结构。 MRAM管芯可以设置在封装的空腔中，并且磁性安全结构可以包括至少三层，包括永磁层和软磁性层。

公开(公告)号：US20130242646A1

公开(公告)日：2013-09-19

申请号：US13419066

申请日：2012-03-13

Applicant: Romney R. Katti ,  James L. Tucker ,  Anuj Kohli

Inventor： Romney R. Katti ,  James L. Tucker ,  Anuj Kohli

IPC: G11C11/16 ,  H01L21/8246

CPC classification number: H01L23/573 ,  G06F21/79 ,  G11C11/161 ,  G11C11/1657 ,  G11C11/1659 ,  G11C11/1673 ,  G11C11/1675 ,  G11C11/1695 ,  H01L27/226 ,  H01L43/02 ,  H01L43/08 ,  H01L43/12 ,  H01L2924/0002 ,  H01L2924/00

Abstract: An MRAM die may include a first write line, a second write line, an MRAM cell disposed between the first write line and the second write line, and a magnetic security structure adjacent to the MRAM cell. The magnetic security structure may include a permanent magnetic layer and a soft magnetic layer.

Abstract translation: MRAM管芯可以包括第一写入线，第二写入线，布置在第一写入线和第二写入线之间的MRAM单元，以及与MRAM单元相邻的磁性安全结构。 磁性安全结构可以包括永久磁性层和软磁性层。

公开(公告)号：US09042164B2

公开(公告)日：2015-05-26

申请号：US13429761

申请日：2012-03-26

Applicant: Romney R. Katti ,  James L. Tucker ,  Anuj Kohli

Inventor： Romney R. Katti ,  James L. Tucker ,  Anuj Kohli

IPC: G11C11/00 ,  H01L23/00 ,  H01L27/22 ,  H01L43/02 ,  H01L43/08

CPC classification number: H01L23/576 ,  G11C11/1657 ,  G11C11/1659 ,  G11C11/1673 ,  G11C11/1675 ,  G11C11/1695 ,  H01L27/228 ,  H01L43/02 ,  H01L43/08 ,  H01L2924/0002 ,  H01L2924/16152 ,  H01L2924/00

Abstract: A system may include circuitry and a magnetoresistive random access memory (MRAM) die including at least one MRAM cell. The circuitry may be configured to detect attempted tampering with the MRAM die and generate a signal based on the detected attempted tampering. The signal may be sufficient to damage or destroy at least one layer of the at least one MRAM cell or a fuse electrically connected to a read line of the at least one MRAM cell.

Abstract translation: 系统可以包括电路和包括至少一个MRAM单元的磁阻随机存取存储器（MRAM）管芯。 电路可以被配置为检测对MRAM管芯的尝试篡改，并且基于检测到的尝试篡改产生信号。 所述信号可能足以损坏或破坏所述至少一个MRAM单元的至少一层或电连接到所述至少一个MRAM单元的读取线的保险丝。

公开(公告)号：US08730715B2

公开(公告)日：2014-05-20

申请号：US13429692

申请日：2012-03-26

Applicant: Romney R. Katti ,  James L. Tucker ,  Anuj Kohli

Inventor： Romney R. Katti ,  James L. Tucker ,  Anuj Kohli

IPC: G11C11/00 ,  H01L23/00 ,  H01L23/02 ,  G11C11/16

CPC classification number: H01L23/57 ,  G11C11/16 ,  G11C11/1657 ,  G11C11/1659 ,  G11C11/1673 ,  G11C11/1675 ,  G11C11/1695 ,  H01L23/573 ,  H01L27/228 ,  H01L43/02 ,  H01L2924/0002 ,  H01L2924/16152 ,  H01L2924/00

Abstract: A magnetoresistive random access memory (MRAM) die may include an MRAM cell, a reservoir defined by the MRAM die, and a chemical disposed in the reservoir. At least one boundary of the reservoir may be configured to be damaged in response to attempted tampering with the MRAM die, such that at least some of the chemical is released from the reservoir when the at least one boundary of the reservoir is damaged. In some examples, at least some of the chemical is configured to contact and alter or damage at least a portion of the MRAM cell when the chemical is released from the reservoir.

Abstract translation: 磁阻随机存取存储器（MRAM）管芯可以包括MRAM单元，由MRAM管芯限定的储存器和设置在贮存器中的化学物质。 储存器的至少一个边界可以被配置为响应于试图篡改MRAM管芯而被损坏，使得当储存器的至少一个边界被损坏时，至少一些化学物质从贮存器释放。 在一些实例中，当化学品从储存器中释放时，至少一些化学物质被配置为接触和改变或损坏MRAM单元的至少一部分。

公开(公告)号：US08171542B2

公开(公告)日：2012-05-01

申请号：US11352539

申请日：2006-02-13

Applicant: James L. Tucker

Inventor： James L. Tucker

IPC: G06F21/00

CPC classification number: H04L9/12 ,  G06F21/85 ,  G11C7/24 ,  G11C29/1201 ,  G11C29/46 ,  H04L9/3271

Abstract: A system to control access to at least one protected device, the system comprising a test access port operable to mate with an external key device and an internal key device that is operable to receive synchronized cipher words during an idle state of the test access port from a removable external key device. The internal key device is also operable to receive test signals via the external key device and to input the received test signals to the protected device based on the synchronized cipher words. The protected device and the internal key device are one of located within a closed chassis, located under a protective security coating, located within a multi-chip-module, located within a closed integrated circuit package, and combinations thereof.

Abstract translation: 一种用于控制对至少一个受保护设备的访问的系统，所述系统包括可操作以与外部密钥设备交配的测试访问端口和可操作以在所述测试访问端口的空闲状态期间接收同步密码字的内部密钥设备， 一个可拆卸的外部钥匙装置。 内部密钥设备还可操作以经由外部密钥设备接收测试信号，并且基于同步密码字将接收到的测试信号输入到受保护的设备。 受保护装置和内部关键装置是位于封闭式底盘内的一个，位于封闭集成电路封装内的位于多芯片模块内的保护性安全涂层及其组合之下。

公开(公告)号：US20130145177A1

公开(公告)日：2013-06-06

申请号：US13311593

申请日：2011-12-06

Applicant: Thomas Cordella ,  John Profumo ,  James L. Tucker

Inventor： Thomas Cordella ,  John Profumo ,  James L. Tucker

IPC: G06F12/14

CPC classification number: G06F12/1408 ,  G06F21/00 ,  G06F21/78

Abstract: Contents of a memory are encrypted using an encryption key that is generated based on a random number and a memory location at which the contents are stored. Each of a plurality of locations of a memory can be associated with a respective unique pointer value, and an encryption key may be generated based on the unique pointer value and the random number. In some examples, the random number is unique to a power-up cycle of a system comprising the memory or is generated based on a time at which the data to be stored by the memory at the selected memory location is written to the memory.

Abstract translation: 使用基于存储内容的随机数和存储器位置生成的加密密钥对存储器的内容进行加密。 存储器的多个位置中的每一个可以与相应的唯一指针值相关联，并且可以基于唯一指针值和随机数生成加密密钥。 在一些示例中，随机数对于包括存储器的系统的加电周期是唯一的，或者是基于存储器中存储在所选择的存储器位置的数据被写入存储器的时间而产生的随机数。