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1.发明授权公开(公告)号：US08091190B2
公开(公告)日：2012-01-10
申请号：US12711484
申请日：2010-02-24
CPC分类号： H03H3/02 , H03H9/02086 , H03H9/175 , H03H2003/025 , Y10T29/42 , Y10T29/43 , Y10T29/435 , Y10T29/49004 , Y10T29/49005 , Y10T29/4913
摘要： A mirror for a piezoelectric resonator consisting of alternately arranged layers of high and low acoustic impedance is manufactured by at first producing a first layer on which a second layer is produced, so that the second layer partially covers the first layer. Then, a planarization layer is applied on the first layer and on the second layer. Subsequently, a portion of the second layer is exposed by structuring the planarization layer, wherein the portion is associated with an active region of the piezoelectric resonator. Finally, the resulting structure is planarized by removing the portions of the planarization layer remaining outside the portion.
摘要翻译： 通过首先制造其上制造第二层的第一层，制造由交替布置的高和低声阻抗层组成的压电谐振器的反射镜，使得第二层部分地覆盖第一层。 然后，在第一层和第二层上施加平坦化层。 随后，通过构造平坦化层来暴露第二层的一部分，其中该部分与压电谐振器的有源区相关。 最后，通过去除残留在该部分外部的平坦化层的部分，将所得到的结构平坦化。
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2.发明申请Method of manufacturing an acoustic mirror for piezoelectric resonator and method of manufacturing a piezoelectric resonator 失效制造用于压电谐振器的声反射镜的方法和制造压电谐振器的方法公开(公告)号：US20070199185A1
公开(公告)日：2007-08-30
申请号：US11361840
申请日：2006-02-24
IPC分类号： H04R17/00
CPC分类号： H03H3/02 , H03H9/02086 , H03H9/175 , H03H2003/025 , Y10T29/42 , Y10T29/43 , Y10T29/435 , Y10T29/49004 , Y10T29/49005 , Y10T29/4913
摘要： A mirror for a piezoelectric resonator consisting of alternately arranged layers of high and low acoustic impedance is manufactured by at first producing a first layer on which a second layer is produced, so that the second layer partially covers the first layer. Then, a planarization layer is applied on the first layer and on the second layer. Subsequently, a portion of the second layer is exposed by structuring the planarization layer, wherein the portion is associated with an active region of the piezoelectric resonator. Finally, the resulting structure is planarized by removing the portions of the planarization layer remaining outside the portion.
摘要翻译： 通过首先制造其上制造第二层的第一层，制造由交替布置的高和低声阻抗层组成的压电谐振器的反射镜，使得第二层部分地覆盖第一层。 然后，在第一层和第二层上施加平坦化层。 随后，通过构造平坦化层来暴露第二层的一部分，其中该部分与压电谐振器的有源区相关联。 最后，通过去除残留在该部分外部的平坦化层的部分，将所得到的结构平坦化。
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公开(公告)号：US07694397B2
公开(公告)日：2010-04-13
申请号：US11361840
申请日：2006-02-24
CPC分类号： H03H3/02 , H03H9/02086 , H03H9/175 , H03H2003/025 , Y10T29/42 , Y10T29/43 , Y10T29/435 , Y10T29/49004 , Y10T29/49005 , Y10T29/4913
摘要： A mirror for a piezoelectric resonator consisting of alternately arranged layers of high and low acoustic impedance is manufactured by at first producing a first layer on which a second layer is produced, so that the second layer partially covers the first layer. Then, a planarization layer is applied on the first layer and on the second layer. Subsequently, a portion of the second layer is exposed by structuring the planarization layer, wherein the portion is associated with an active region of the piezoelectric resonator. Finally, the resulting structure is planarized by removing the portions of the planarization layer remaining outside the portion.
摘要翻译： 通过首先制造其上制造第二层的第一层，制造由交替布置的高和低声阻抗层组成的压电谐振器的反射镜，使得第二层部分地覆盖第一层。 然后，在第一层和第二层上施加平坦化层。 随后，通过构造平坦化层来暴露第二层的一部分，其中该部分与压电谐振器的有源区相关联。 最后，通过去除残留在该部分外部的平坦化层的部分，将所得到的结构平坦化。
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公开(公告)号：US20060170519A1
公开(公告)日：2006-08-03
申请号：US11068522
申请日：2005-02-28
IPC分类号： H03H9/54
CPC分类号： H03H9/0211 , H03H9/175
摘要： A BAW resonator includes a resonator region having a piezo-electric layer between two excitation electrodes, wherein an acoustic standing wave forms when operating the BAW resonator at a resonant frequency. Furthermore, the BAW resonator includes a leaky wave reflection structure formed to reflect leaky waves generated when operating the BAW resonator, wherein the leaky waves propagate in a direction differing from a propagation direction of the acoustic standing wave.
摘要翻译： BAW谐振器包括在两个激励电极之间具有压电层的谐振器区域，其中在谐振频率下操作BAW谐振器时形成声驻波。 此外，BAW谐振器包括形成为反映在操作BAW谐振器时产生的泄漏波的泄漏波反射结构，其中泄漏波在与声驻波的传播方向不同的方向上传播。
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公开(公告)号：US07199683B2
公开(公告)日：2007-04-03
申请号：US11068522
申请日：2005-02-28
CPC分类号： H03H9/0211 , H03H9/175
摘要： A BAW resonator includes a resonator region having a piezo-electric layer between two excitation electrodes, wherein an acoustic standing wave forms when operating the BAW resonator at a resonant frequency. Furthermore, the BAW resonator includes a leaky wave reflection structure formed to reflect leaky waves generated when operating the BAW resonator, wherein the leaky waves propagate in a direction differing from a propagation direction of the acoustic standing wave.
摘要翻译： BAW谐振器包括在两个激励电极之间具有压电层的谐振器区域，其中在谐振频率下操作BAW谐振器时形成声驻波。 此外，BAW谐振器包括形成为反映在操作BAW谐振器时产生的漏波的泄漏波反射结构，其中漏波沿与声驻波的传播方向不同的方向传播。
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公开(公告)号：US20100107389A1
公开(公告)日：2010-05-06
申请号：US12646084
申请日：2009-12-23
申请人： Winfried Nessler , Robert Thalhammer , Thomas Rainer Herzog , Martin Handtmann , Lueder Elbrecht
发明人： Winfried Nessler , Robert Thalhammer , Thomas Rainer Herzog , Martin Handtmann , Lueder Elbrecht
IPC分类号： H04R31/00 , H01L41/083 , H01L41/22
CPC分类号： H03H3/02 , H03H9/171 , H03H9/584 , H03H9/585 , Y10T29/42 , Y10T29/49005 , Y10T29/49156
摘要： In one embodiment, a method of producing a resonator in thin-film technology is described. The resonator comprises a piezoelectric layer arranged at least partially between a lower electrode and an upper electrode, the resonator being formed over a substrate. The method comprises: forming the lower electrode of the resonator over the substrate; depositing and patterning an insulating layer over the substrate, the insulating layer comprising a thickness substantially equal to a thickness of the lower electrode; removing a portion of the insulating layer to partially expose a surface of the lower electrode; removing a portion of the insulating layer over the surface of the lower electrode by chemical mechanical polishing; forming the piezoelectric layer over the lower electrode; and producing the upper electrode on the piezoelectric layer.
摘要翻译： 在一个实施例中，描述了一种制造薄膜技术中的谐振器的方法。 谐振器包括至少部分地布置在下电极和上电极之间的压电层，所述谐振器形成在衬底上。 该方法包括：在衬底上形成谐振器的下电极; 在衬底上沉积和图案化绝缘层，绝缘层包括基本上等于下电极厚度的厚度; 去除所述绝缘层的一部分以部分地暴露所述下电极的表面; 通过化学机械抛光在所述下电极的表面上去除所述绝缘层的一部分; 在下电极上形成压电层; 并在压电层上制造上电极。
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公开(公告)号：US20080297279A1
公开(公告)日：2008-12-04
申请号：US11756571
申请日：2007-05-31
CPC分类号： H03H9/0095 , H03H9/584 , H03H9/589 , H03H9/605 , Y10T29/42
摘要： A bulk acoustic wave (BAW) filter device includes a first port, a second port, a first coupled resonator filter stage, a second coupled resonator filter stage and a filter section. The first coupled resonator filter stage includes a first BAW resonator connected to the first port and a second BAW resonator acoustically coupled to the first BAW resonator. The second coupled resonator filter stage includes a third BAW resonator connected to the second port and a fourth BAW resonator acoustically coupled to the third BAW resonator. The filter section includes a fifth BAW resonator, the fifth BAW resonator connected between the second BAW resonator and the fourth BAW resonator.
摘要翻译： 体声波（BAW）滤波器装置包括第一端口，第二端口，第一耦合谐振器滤波器级，第二耦合谐振器滤波器级和滤波器部分。 第一耦合谐振器滤波器级包括连接到第一端口的第一BAW谐振器和声耦合到第一BAW谐振器的第二BAW谐振器。 第二耦合谐振器滤波器级包括连接到第二端口的第三BAW谐振器和声耦合到第三BAW谐振器的第四BAW谐振器。 滤波器部分包括第五个BAW谐振器，第五个BAW谐振器连接在第二个BAW谐振器和第四个BAW谐振器之间。
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公开(公告)号：US08018303B2
公开(公告)日：2011-09-13
申请号：US11871711
申请日：2007-10-12
IPC分类号： H03H9/54
摘要： An apparatus includes a stacked crystal filter and a bulk acoustic wave resonator, which are acoustically coupled.
摘要翻译： 一种装置包括声耦合的堆叠晶体滤波器和体声波谐振器。
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公开(公告)号：US07825749B2
公开(公告)日：2010-11-02
申请号：US11756583
申请日：2007-05-31
CPC分类号： H03H9/0095 , H03H3/04 , H03H9/564 , H03H9/584 , H03H9/589 , H03H9/605 , H03H2003/0471 , Y10T29/42
摘要： A method for manufacturing a filter device is provided. The filter device comprises a coupled resonator at a first site, a shunt resonator at a second site and a series resonator at a third site, the coupled resonator comprising a first and a second resonator. The method comprising a step of providing a substrate with a piezoelectric layer sandwiched between a first electrode and a first part of a second electrode at the first site and the second site, the piezoelectric layer sandwiched between the first electrode and a second part of the second electrode at the third site. The method further comprising the step of forming a coupling layer on the second electrode, the step of forming a further piezoelectric layer sandwiched between a further first electrode and a further second electrode at the third site and the step of removing the coupling layer at the second and third sites.
摘要翻译： 提供一种制造过滤装置的方法。 滤波器装置包括在第一位置处的耦合谐振器，在第二位置处的并联谐振器和在第三位置的串联谐振器，所述耦合谐振器包括第一和第二谐振器。 该方法包括以下步骤：在第一位置和第二位置处提供夹在第一电极和第二电极的第一部分之间的压电层的衬底，压电层夹在第一电极和第二电极的第二部分之间 电极在第三个位置。 该方法还包括在第二电极上形成耦合层的步骤，在第三位置处形成夹在另外的第一电极和另外的第二电极之间的另外的压电层的步骤以及在第二位置处去除耦合层的步骤 和第三个网站。
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公开(公告)号：US20090218912A1
公开(公告)日：2009-09-03
申请号：US12040088
申请日：2008-02-29
IPC分类号： H01L41/083
CPC分类号： H03H9/174 , H03H9/175 , H03H2009/02196
摘要： A bulk acoustic wave device includes a first electrode, a second electrode, a piezoelectric layer arranged between the first and second electrodes and a semiconductor layer arranged between the first and second electrodes. The semiconductor layer is electrically isolated from the first electrode.
摘要翻译： 体声波装置包括第一电极，第二电极，布置在第一和第二电极之间的压电层和布置在第一和第二电极之间的半导体层。 半导体层与第一电极电隔离。
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