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1.发明授权Bulk acoustic resonator structures comprising a single material acoustic coupling layer comprising inhomogeneous acoustic property 失效包括包含不均匀声学特性的单一材料声耦合层的体声波谐振器结构公开(公告)号：US08283999B2
公开(公告)日：2012-10-09
申请号：US12710640
申请日：2010-02-23
申请人： Lueder Elbrecht , Robert Thalhammer
发明人： Lueder Elbrecht , Robert Thalhammer
摘要： In accordance with a representative embodiment, a BAW resonator structure comprises: a first BAW resonator comprising a first lower electrode, a first upper electrode and a first piezoelectric layer disposed between the first lower electrode and the first upper electrode; and a second BAW resonator comprising a second lower electrode, a second upper electrode and a second piezoelectric layer disposed between the second lower electrode and the second upper electrode. The BAW resonator structure also comprises a single-material acoustic coupling layer disposed between the first and second BAW resonators. The single-material acoustic coupling layer comprises an inhomogeneous acoustic property across a thickness of the single-material acoustic coupling layer.
摘要翻译： 根据代表性实施例，BAW谐振器结构包括：第一BAW谐振器，包括第一下电极，第一上电极和设置在第一下电极和第一上电极之间的第一压电层; 以及第二BAW谐振器，包括设置在第二下电极和第二上电极之间的第二下电极，第二上电极和第二压电层。 BAW谐振器结构还包括设置在第一和第二BAW谐振器之间的单一材料声耦合层。 单材料声耦合层包括穿过单材料声耦合层的厚度的不均匀的声学性质。
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2.发明授权公开(公告)号：US08091190B2
公开(公告)日：2012-01-10
申请号：US12711484
申请日：2010-02-24
CPC分类号： H03H3/02 , H03H9/02086 , H03H9/175 , H03H2003/025 , Y10T29/42 , Y10T29/43 , Y10T29/435 , Y10T29/49004 , Y10T29/49005 , Y10T29/4913
摘要： A mirror for a piezoelectric resonator consisting of alternately arranged layers of high and low acoustic impedance is manufactured by at first producing a first layer on which a second layer is produced, so that the second layer partially covers the first layer. Then, a planarization layer is applied on the first layer and on the second layer. Subsequently, a portion of the second layer is exposed by structuring the planarization layer, wherein the portion is associated with an active region of the piezoelectric resonator. Finally, the resulting structure is planarized by removing the portions of the planarization layer remaining outside the portion.
摘要翻译： 通过首先制造其上制造第二层的第一层，制造由交替布置的高和低声阻抗层组成的压电谐振器的反射镜，使得第二层部分地覆盖第一层。 然后，在第一层和第二层上施加平坦化层。 随后，通过构造平坦化层来暴露第二层的一部分，其中该部分与压电谐振器的有源区相关。 最后，通过去除残留在该部分外部的平坦化层的部分，将所得到的结构平坦化。
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3.发明授权Apparatus with acoustically coupled BAW resonators and a method for matching impedances 有权具有声耦合BAW谐振器的装置和用于匹配阻抗的方法公开(公告)号：US07786826B2
公开(公告)日：2010-08-31
申请号：US11871665
申请日：2007-10-12
CPC分类号： H03H9/584 , H03H9/0004 , H03H9/0095 , H03H9/60 , Y10T29/42
摘要： An apparatus includes a first bulk acoustic wave (BAW) device including a first impedance and a second BAW device including a second impedance, wherein the first and second impedances are different and the first and second BAW devices are acoustically coupled.
摘要翻译： 一种装置包括包括第一阻抗的第一体声波（BAW）装置和包括第二阻抗的第二BAW装置，其中第一和第二阻抗不同，并且第一和第二BAW装置是声学耦合的。
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公开(公告)号：US20080297280A1
公开(公告)日：2008-12-04
申请号：US11756583
申请日：2007-05-31
CPC分类号： H03H9/0095 , H03H3/04 , H03H9/564 , H03H9/584 , H03H9/589 , H03H9/605 , H03H2003/0471 , Y10T29/42
摘要： A method for manufacturing a filter device is provided. The filter device comprises a coupled resonator at a first site, a shunt resonator at a second site and a series resonator at a third site, the coupled resonator comprising a first and a second resonator. The method comprising a step of providing a substrate with a piezoelectric layer sandwiched between a first electrode and a first part of a second electrode at the first site and the second site, the piezoelectric layer sandwiched between the first electrode and a second part of the second electrode at the third site. The method further comprising the step of forming a coupling layer on the second electrode, the step of forming a further piezoelectric layer sandwiched between a further first electrode and a further second electrode at the third site and the step of removing the coupling layer at the second and third sites.
摘要翻译： 提供一种制造过滤装置的方法。 滤波器装置包括在第一位置处的耦合谐振器，在第二位置处的并联谐振器和在第三位置的串联谐振器，所述耦合谐振器包括第一和第二谐振器。 该方法包括以下步骤：在第一位置和第二位置处提供夹在第一电极和第二电极的第一部分之间的压电层的基板，压电层夹在第一电极和第二电极的第二部分之间 电极在第三个位置。 该方法还包括在第二电极上形成耦合层的步骤，在第三位置处形成夹在另外的第一电极和另外的第二电极之间的另外的压电层的步骤以及在第二位置处去除耦合层的步骤 和第三个网站。
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5.发明授权Circuit for adjusting the operating point of multiple gate field effect transistors 有权用于调整多栅极场效应晶体管工作点的电路公开(公告)号：US07187238B2
公开(公告)日：2007-03-06
申请号：US11172441
申请日：2005-06-30
申请人： Robert Thalhammer
发明人： Robert Thalhammer
IPC分类号： H03F3/16
CPC分类号： H03F1/301
摘要： An amplifier circuit includes a first multiple gate field-effect transistor having a source terminal, a drain terminal, at least one signal gate terminal for receiving an input signal and at least one control gate terminal for receiving a control signal, and a second multiple gate field-effect transistor having a source terminal, a drain terminal, at least one signal gate terminal connected to the signal gate terminal of the first multiple gate field-effect transistor, and a control gate terminal connected to the control gate terminal of the first multiple gate field-effect transistor, the signal gate terminal of the second multiple gate field-effect transistor being connected to that source terminal/drain terminal of the second multiple gate field-effect transistor which is closer to the signal gate terminal of the second multiple gate field-effect transistor.
摘要翻译： 放大器电路包括具有源极端子，漏极端子，用于接收输入信号的至少一个信号栅极端子和用于接收控制信号的至少一个控制栅极端子的第一多栅极场效应晶体管和第二多个栅极 场效应晶体管，其具有源极端子，漏极端子，连接到第一多栅极场效应晶体管的信号栅极端子的至少一个信号栅极端子以及连接到第一多个栅极端子的第一多个栅极端子的控制栅极端子的控制栅极端子 栅极场效应晶体管，第二多栅极场效应晶体管的信号栅极端子连接到第二多栅极场效应晶体管的源极端子/漏极端子，其靠近第二多个栅极的信号栅极端子 场效应晶体管。
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公开(公告)号：US20060170519A1
公开(公告)日：2006-08-03
申请号：US11068522
申请日：2005-02-28
IPC分类号： H03H9/54
CPC分类号： H03H9/0211 , H03H9/175
摘要： A BAW resonator includes a resonator region having a piezo-electric layer between two excitation electrodes, wherein an acoustic standing wave forms when operating the BAW resonator at a resonant frequency. Furthermore, the BAW resonator includes a leaky wave reflection structure formed to reflect leaky waves generated when operating the BAW resonator, wherein the leaky waves propagate in a direction differing from a propagation direction of the acoustic standing wave.
摘要翻译： BAW谐振器包括在两个激励电极之间具有压电层的谐振器区域，其中在谐振频率下操作BAW谐振器时形成声驻波。 此外，BAW谐振器包括形成为反映在操作BAW谐振器时产生的泄漏波的泄漏波反射结构，其中泄漏波在与声驻波的传播方向不同的方向上传播。
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公开(公告)号：US08018303B2
公开(公告)日：2011-09-13
申请号：US11871711
申请日：2007-10-12
IPC分类号： H03H9/54
摘要： An apparatus includes a stacked crystal filter and a bulk acoustic wave resonator, which are acoustically coupled.
摘要翻译： 一种装置包括声耦合的堆叠晶体滤波器和体声波谐振器。
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公开(公告)号：US07825749B2
公开(公告)日：2010-11-02
申请号：US11756583
申请日：2007-05-31
CPC分类号： H03H9/0095 , H03H3/04 , H03H9/564 , H03H9/584 , H03H9/589 , H03H9/605 , H03H2003/0471 , Y10T29/42
摘要： A method for manufacturing a filter device is provided. The filter device comprises a coupled resonator at a first site, a shunt resonator at a second site and a series resonator at a third site, the coupled resonator comprising a first and a second resonator. The method comprising a step of providing a substrate with a piezoelectric layer sandwiched between a first electrode and a first part of a second electrode at the first site and the second site, the piezoelectric layer sandwiched between the first electrode and a second part of the second electrode at the third site. The method further comprising the step of forming a coupling layer on the second electrode, the step of forming a further piezoelectric layer sandwiched between a further first electrode and a further second electrode at the third site and the step of removing the coupling layer at the second and third sites.
摘要翻译： 提供一种制造过滤装置的方法。 滤波器装置包括在第一位置处的耦合谐振器，在第二位置处的并联谐振器和在第三位置的串联谐振器，所述耦合谐振器包括第一和第二谐振器。 该方法包括以下步骤：在第一位置和第二位置处提供夹在第一电极和第二电极的第一部分之间的压电层的衬底，压电层夹在第一电极和第二电极的第二部分之间 电极在第三个位置。 该方法还包括在第二电极上形成耦合层的步骤，在第三位置处形成夹在另外的第一电极和另外的第二电极之间的另外的压电层的步骤以及在第二位置处去除耦合层的步骤 和第三个网站。
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9.发明申请Method of manufacturing an acoustic mirror for piezoelectric resonator and method of manufacturing a piezoelectric resonator 失效制造用于压电谐振器的声反射镜的方法和制造压电谐振器的方法公开(公告)号：US20070199185A1
公开(公告)日：2007-08-30
申请号：US11361840
申请日：2006-02-24
IPC分类号： H04R17/00
CPC分类号： H03H3/02 , H03H9/02086 , H03H9/175 , H03H2003/025 , Y10T29/42 , Y10T29/43 , Y10T29/435 , Y10T29/49004 , Y10T29/49005 , Y10T29/4913
摘要： A mirror for a piezoelectric resonator consisting of alternately arranged layers of high and low acoustic impedance is manufactured by at first producing a first layer on which a second layer is produced, so that the second layer partially covers the first layer. Then, a planarization layer is applied on the first layer and on the second layer. Subsequently, a portion of the second layer is exposed by structuring the planarization layer, wherein the portion is associated with an active region of the piezoelectric resonator. Finally, the resulting structure is planarized by removing the portions of the planarization layer remaining outside the portion.
摘要翻译： 通过首先制造其上制造第二层的第一层，制造由交替布置的高和低声阻抗层组成的压电谐振器的反射镜，使得第二层部分地覆盖第一层。 然后，在第一层和第二层上施加平坦化层。 随后，通过构造平坦化层来暴露第二层的一部分，其中该部分与压电谐振器的有源区相关联。 最后，通过去除残留在该部分外部的平坦化层的部分，将所得到的结构平坦化。
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公开(公告)号：US20100107389A1
公开(公告)日：2010-05-06
申请号：US12646084
申请日：2009-12-23
申请人： Winfried Nessler , Robert Thalhammer , Thomas Rainer Herzog , Martin Handtmann , Lueder Elbrecht
发明人： Winfried Nessler , Robert Thalhammer , Thomas Rainer Herzog , Martin Handtmann , Lueder Elbrecht
IPC分类号： H04R31/00 , H01L41/083 , H01L41/22
CPC分类号： H03H3/02 , H03H9/171 , H03H9/584 , H03H9/585 , Y10T29/42 , Y10T29/49005 , Y10T29/49156
摘要： In one embodiment, a method of producing a resonator in thin-film technology is described. The resonator comprises a piezoelectric layer arranged at least partially between a lower electrode and an upper electrode, the resonator being formed over a substrate. The method comprises: forming the lower electrode of the resonator over the substrate; depositing and patterning an insulating layer over the substrate, the insulating layer comprising a thickness substantially equal to a thickness of the lower electrode; removing a portion of the insulating layer to partially expose a surface of the lower electrode; removing a portion of the insulating layer over the surface of the lower electrode by chemical mechanical polishing; forming the piezoelectric layer over the lower electrode; and producing the upper electrode on the piezoelectric layer.
摘要翻译： 在一个实施例中，描述了一种制造薄膜技术中的谐振器的方法。 谐振器包括至少部分地布置在下电极和上电极之间的压电层，所述谐振器形成在衬底上。 该方法包括：在衬底上形成谐振器的下电极; 在衬底上沉积和图案化绝缘层，绝缘层包括基本上等于下电极厚度的厚度; 去除所述绝缘层的一部分以部分地暴露所述下电极的表面; 通过化学机械抛光在所述下电极的表面上去除所述绝缘层的一部分; 在下电极上形成压电层; 并在压电层上制造上电极。
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