摘要:
A mirror for a piezoelectric resonator consisting of alternately arranged layers of high and low acoustic impedance is manufactured by at first producing a first layer on which a second layer is produced, so that the second layer partially covers the first layer. Then, a planarization layer is applied on the first layer and on the second layer. Subsequently, a portion of the second layer is exposed by structuring the planarization layer, wherein the portion is associated with an active region of the piezoelectric resonator. Finally, the resulting structure is planarized by removing the portions of the planarization layer remaining outside the portion.
摘要:
A mirror for a piezoelectric resonator consisting of alternately arranged layers of high and low acoustic impedance is manufactured by at first producing a first layer on which a second layer is produced, so that the second layer partially covers the first layer. Then, a planarization layer is applied on the first layer and on the second layer. Subsequently, a portion of the second layer is exposed by structuring the planarization layer, wherein the portion is associated with an active region of the piezoelectric resonator. Finally, the resulting structure is planarized by removing the portions of the planarization layer remaining outside the portion.
摘要:
An acoustic mirror of alternately arranged layers of high and low acoustic impedances is manufactured in that a basic material having a first layer of the layer sequence is initially provided, on which a second layer of the layer sequence is created on the first layer such that the second layer of the layer sequence partially covers the first layer. Subsequently, a planarization layer is applied onto the layer sequence, and the planarization layer is removed in an area which in the common layer plane projects laterally beyond the second layer so as to result in a residual planarization layer. Finally, a termination layer is applied onto the layer sequence and the residual planarization layer.
摘要:
A method for manufacturing a patterned bottom electrode in a piezoelectric device comprises the steps of providing a basic material and producing a layer structure of a conductive material on the basic material. A protective layer is applied on the layer structure over an area. Thereafter, a planarization layer is applied on the protective layer and on the basic material. A portion of the protective layer is then exposed by patterning the planarization layer. Subsequently, the pattern is planarized by removing the portions of the planarization layer remaining outside the portion such that the protective layer laterally abuts on the planarization layer in a flush manner and forms a planar surface. The protective layer is then removed along with a corresponding part of the planarization layer laterally arranged in a flush manner. This results in the layer structure and the remaining planarization layer forming a planar surface.
摘要:
A thin-film BAW filter has at least one CRF section and at least one ladder or grating filter section, with the CRF section having at least two coupled resonators, with the CRF section and the ladder or grating filter section being integrated on a common substrate, in order to produce a thin-film BAW filter. In a method for production of a thin-film BAW filter, having at least one CRF section and at least one ladder or grating filter section, the CRF section has at least two coupled resonators and the CRF section and the ladder or grating filter section are integrated on a common substrate.
摘要:
A method for manufacturing a patterned bottom electrode in a piezoelectric device comprises the steps of providing a basic material and producing a layer structure of a conductive material on the basic material. A protective layer is applied on the layer structure over an area. Thereafter, a planarization layer is applied on the protective layer and on the basic material. A portion of the protective layer is then exposed by patterning the planarization layer. Subsequently, the pattern is planarized by removing the portions of the planarization layer remaining outside the portion such that the protective layer laterally abuts on the planarization layer in a flush manner and forms a planar surface. The protective layer is then removed along with a corresponding part of the planarization layer laterally arranged in a flush manner. This results in the layer structure and the remaining planarization layer forming a planar surface.
摘要:
A method for manufacturing a coupled resonator device includes forming a first part of a plurality of layers, trimming an exposed layer of the first part and forming a remaining part of the plurality of layers. The coupled resonator device includes a stack of the plurality of layers, the plurality of layers including a first piezo-layer with a first and a second electrode layer sandwiching the first piezo-layer, a second piezo-layer with a first and a second electrode layer sandwiching the second piezo-layer, the first and second piezo-layers being acoustically coupled to each other.
摘要:
A method for manufacturing a coupled resonator device includes forming a first part of a plurality of layers, trimming an exposed layer of the first part and forming a remaining part of the plurality of layers. The coupled resonator device includes a stack of the plurality of layers, the plurality of layers including a first piezo-layer with a first and a second electrode layer sandwiching the first piezo-layer, a second piezo-layer with a first and a second electrode layer sandwiching the second piezo-layer, the first and second piezo-layers being acoustically coupled to each other.
摘要:
A mirror for a piezoelectric resonator consisting of alternately arranged layers of high and low acoustic impedance is manufactured by at first producing a first layer on which a second layer is produced, so that the second layer partially covers the first layer. Then, a planarization layer is applied on the first layer and on the second layer. Subsequently, a portion of the second layer is exposed by structuring the planarization layer, wherein the portion is associated with an active region of the piezoelectric resonator. Finally, the resulting structure is planarized by removing the portions of the planarization layer remaining outside the portion.
摘要:
A thin-film BAW filter has at least one CRF section and at least one ladder or grating filter section, with the CRF section having at least two coupled resonators, with the CRF section and the ladder or grating filter section being integrated on a common substrate, in order to produce a thin-film BAW filter. In a method for production of a thin-film BAW filter, having at least one CRF section and at least one ladder or grating filter section, the CRF section has at least two coupled resonators and the CRF section and the ladder or grating filter section are integrated on a common substrate.