公开(公告)号：US06878604B2

公开(公告)日：2005-04-12

申请号：US10333727

申请日：2001-07-03

申请人： Robert Aigner ,  Lueder Elbrecht ,  Thomas Rainer Herzog ,  Stephan Marksteiner ,  Winfried Nessler

发明人： Robert Aigner ,  Lueder Elbrecht ,  Thomas Rainer Herzog ,  Stephan Marksteiner ,  Winfried Nessler

IPC分类号： H01L21/28 ,  H01L37/02 ,  H01L41/08 ,  H01L41/09 ,  H01L41/22 ,  H01L41/319 ,  H03H3/02 ,  H03H9/17 ,  H01L21/20

CPC分类号： H03H9/175 ,  H01L37/02 ,  H01L41/319

摘要： A semiconductor component is provided having a layer sequence for conversion of acoustic to thermal signals and electrical voltage changes to one another, as well as a process for its production. The layer sequence has a lower electrode, an upper electrode and a layer which is arranged between them and is piezoelectrical or pyroelectrical. An auxiliary layer is arranged between the lower electrode and the layer and is used for homogeneously oriented growth of the layer during the production process. The auxiliary layer preferably consists essentially of amorphous silicon, amorphous silicon oxide or amorphous silicon nitride.

摘要翻译： 提供了具有用于将声信号转换成热信号和电压变化彼此的层序列的半导体部件，以及用于其生产的过程。 层序列具有下电极，上电极和布置在它们之间的层，并且是压电或热电。 辅助层布置在下电极和层之间，并用于在生产过程中层的均匀取向生长。 辅助层优选地基本上由非晶硅，非晶氧化硅或非晶氮化硅组成。

公开(公告)号：US20100107389A1

公开(公告)日：2010-05-06

申请号：US12646084

申请日：2009-12-23

申请人： Winfried Nessler ,  Robert Thalhammer ,  Thomas Rainer Herzog ,  Martin Handtmann ,  Lueder Elbrecht

发明人： Winfried Nessler ,  Robert Thalhammer ,  Thomas Rainer Herzog ,  Martin Handtmann ,  Lueder Elbrecht

IPC分类号： H04R31/00 ,  H01L41/083 ,  H01L41/22

CPC分类号： H03H3/02 ,  H03H9/171 ,  H03H9/584 ,  H03H9/585 ,  Y10T29/42 ,  Y10T29/49005 ,  Y10T29/49156

摘要： In one embodiment, a method of producing a resonator in thin-film technology is described. The resonator comprises a piezoelectric layer arranged at least partially between a lower electrode and an upper electrode, the resonator being formed over a substrate. The method comprises: forming the lower electrode of the resonator over the substrate; depositing and patterning an insulating layer over the substrate, the insulating layer comprising a thickness substantially equal to a thickness of the lower electrode; removing a portion of the insulating layer to partially expose a surface of the lower electrode; removing a portion of the insulating layer over the surface of the lower electrode by chemical mechanical polishing; forming the piezoelectric layer over the lower electrode; and producing the upper electrode on the piezoelectric layer.

摘要翻译： 在一个实施例中，描述了一种制造薄膜技术中的谐振器的方法。 谐振器包括至少部分地布置在下电极和上电极之间的压电层，所述谐振器形成在衬底上。 该方法包括：在衬底上形成谐振器的下电极; 在衬底上沉积和图案化绝缘层，绝缘层包括基本上等于下电极厚度的厚度; 去除所述绝缘层的一部分以部分地暴露所述下电极的表面; 通过化学机械抛光在所述下电极的表面上去除所述绝缘层的一部分; 在下电极上形成压电层; 并在压电层上制造上电极。